Search Results - "VITURRO, R. E"

Looking for self-organized critical behavior in avalanches of slightly cohesive powders by Quintanilla, M A, Valverde, J M, Castellanos, A, Viturro, R E

“…We report results from a statistical analysis of avalanches of cohesive powders in a slowly rotated drum. Interparticle adhesion, which diminishes the effect…”
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Metal/(100)GaAs interface: case for a metal-insulator-semiconductor-like structure by FREEOUF, J. L, WOODALL, J. M, BRILLSON, L. J, VITURRO, R. E

“…Various models have been developed to address the problem of ‘‘Fermi level pinning,’’ i.e., why the barrier height varies much less than the Schottky metal…”
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Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments by Ritter, T. M., Weinstein, B. A., Viturro, R. E., Bour, D. P.

“…We report high‐pressure photoluminescence (PL) experiments on GaInP/AlGaInP laser structures and a comprehensive interpretation of the results via calculations…”
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Band bending and interface states for metals on GaAs by VITURRO, R. E, SHAW, J. L, WRIGHT, S. L, MAILHIOT, C, BRILLSON, L. J, TACHE, N, MCKINLEY, J, MARGARITONDO, G, WOODALL, J. M, KIRCHNER, P. D, PETTIT, G. D

“…We have used soft x-ray photoemission and optical emission spectroscopies to observe a broad range of Fermi level stabilization energies at metal interfaces…”
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Optical-emission properties of interface states for metals on III-V semiconductor compounds by VITURRO, R. E, SLADE, M. L, BRILLSON, L. J

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Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces by VITOMIROV, I. M, RAISANEN, A, FINNEFROCK, A. C, VITURRO, R. E, BRILLSON, L. J, KIRCHNER, P. D, PETTIT, G. D, WOODALL, J. M

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Modification of electronic and chemical structure at metal/CdTe interfaces by pulsed laser annealing by SHAW, J. L, VITURRO, R. E, BRILLSON, L. J, KILDAY, D, MARGARITONDO, G

“…The authors have measured the effects of metallization and thermal processing on the chemical interaction, band bending, and deep level formation at Au and…”
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Effect of semiconductor growth method and bulk doping on Fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100) by VITOMIROV, I. M, RAISANEN, A, CHANG, S, VITURRO, R. E, BRILLSON, L. J, RIOUX, D. F, KIRCHNER, P. D, PETTIT, G. D, WOODALL, J. M

“…Effects of substrate doping and growth method on interface deep level formation and Schottky barrier height were investigated using low-energy…”
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Near-ideal Schottky barrier formation at metal-GaP interfaces by BRILLSON, L. J, VITURRA, R. E, SLADE, M. L, CHIARADIA, P, KILDAY, D, KELLY, M. K, MARGARITONDO, G

“…Soft x-ray photoemission measurements of ultrahigh-vacuum-cleaved GaP (110) surfaces with In, Al, Ge, Cu, and Au overlayers reveal Fermi level stabilization…”
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Influence of deep states on CdTe and GaAs metal interface formation by SHAW, J. L, VITURRO, R. E, BRILLSON, L. J, LAGRAFFE, D

“…Luminescence and soft x-ray photoemission measurements of clean metal interfaces with (110) surface CdTe from several as well as (100) MBE vs (110) LEC GaAs…”
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Chemically controlled deep level formation and band bending at metal-CdTe interfaces by SHAW, J. L, VITURRO, R. E, BRILLSON, L. J, LAGRAFFE, D

“…We have used reactive metal interlayers to suppress anion outdiffusion at Au-CdTe junctions and thereby to alter the formation of deep interfacial states…”
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Cathodoluminescence spectroscopy of metal–semiconductor interface structures by Brillson, L. J., Viturro, R. E., Shaw, J. L., Richter, H. W.

“…Low‐energy cathodoluminescence spectroscopy (CLS) is a powerful new technique for characterizing the electronic structure of semiconductor surfaces and…”
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Surface and interface states for GaAs(100) (1×1) and (4×2)‐c(8×2) reconstructions by Vitomirov, I. M., Raisanen, A. D., Finnefrock, A. C., Viturro, R. E., Chang, S., Brillson, L. J., Kirchner, P. D., Pettit, G. D., Woodall, J. M.

“…Low energy cathodoluminescence spectroscopy measurements of GaAs(100) surfaces prepared by thermal desorption of an As passivation layer reveal deep level…”
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Temperature‐dependent formation of interface states and Schottky barriers at metal/molecular‐beam epitaxy GaAs(100) junctions by Chang, S., Shaw, J. L., Viturro, R. E., Brillson, L. J., Kirchner, P. D., Woodall, J. M.

“…We report temperature‐dependent cathodoluminescence spectroscopy (CLS) and internal photoemission spectroscopy (IPS) studies of metal/molecular‐beam epitaxy…”
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Temperature‐dependent chemical and electronic structure of reconstructed GaAs (100) surfaces by Vitomirov, I. M., Raisanen, A. D., Finnefrock, A. C., Viturro, R. E., Brillson, L. J., Kirchner, P. D., Pettit, G. D., Woodall, J. M.

“…Low‐energy electron diffraction, soft x‐ray photoemission, cathodoluminescence (CL), and Auger electron spectroscopies have been performed to investigate the…”
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Molecular‐beam epitaxial growth of arsenide/phosphide heterostructures using valved, solid group V sources by Johnson, F. G., Wicks, G. W., Viturro, R. E., LaForce, R.

“…The first arsenide/phosphide heterojunctions grown by conventional molecular‐beam epitaxy with solid‐source valved crackers are reported. The use of needle…”
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Low‐temperature formation of metal/molecular‐beam epitaxy‐GaAs(100) interfaces: Approaching ideal chemical and electronic limits by Viturro, R. E., Chang, S., Shaw, J. L., Mailhiot, C., Brillson, L. J., Terrasi, A., Hwu, Y., Margaritondo, G., Kirchner, P. D., Woodall, J. M.

“…We report soft x‐ray photoemission studies of metal/molecular‐beam epitaxy (MBE)‐GaAs(100) interfaces formed at low temperature. Our results indicate that…”
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Absence of Fermi level pinning at metal-InxGa1-xAs (100) interfaces by BRILLSON, L. J, SLADE, M. L, VITURRO, R. E, KELLY, M. K, TACHE, N, MARGARITONDO, G, WOODALL, J. M, KIRCHNER, P. D, PETTIT, G. D, WRIGHT, S. L

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Interface states and Schottky barrier formation at metal/GaAs junctions by Viturro, R. E., Mailhiot, C., Shaw, J. L., Brillson, L. J., LaGraffe, D., Margaritondo, G., Pettit, G. D., Woodall, J. M.

“…We report results of x‐ray photoemission and cathodoluminescence spectroscopies studies of interface formation at metal–GaAs junctions. The results are…”
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Interdiffusion, interfacial state formation, and band bending at metal/CdTe interfaces by Shaw, J. L., Viturro, R. E., Brillson, L. J., LaGraffe, D.

“…We report the results of several complementary measurements which relate the Fermi‐level position at metal/CdTe interfaces to bulk crystal quality,…”
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