Search Results - "VARESI, J. B"

Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors by SMITH, E. P. G, PATTEN, E. A, JOHNSON, S. M, RADFORD, W. A, GOETZ, P. M, VENZOR, G. M, ROTH, J. A, NOSHO, B. Z, BENSON, J. D, STOLTZ, A. J, VARESI, J. B, JENSEN, J. E

“…High-performance 20-µm unit-cell two-color detectors using an n-p^sup +^-n HgCdTe triple-layer heterojunction (TLHJ) device architecture grown by molecular…”
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Comparing ICP and ECR etching of HgCdTe, CdZnTe, and CdTe by STOLTZ, A. J, VARESI, J. B, BENSON, J. D

“…The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater…”
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Infrared vision using uncooled micro-optomechanical camera by Perazzo, T., Mao, M., Kwon, O., Majumdar, A., Varesi, J. B., Norton, P.

“…This letter presents the design, fabrication, and imaging results of an uncooled infrared (IR) camera that contains a focal plane array of bimaterial…”
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Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defects by VARESI, J. B, BUELL, Aa, PETERSON, J. M, BORNFREUND, R. E, VILELA, M. F, RADFORD, W. A, JOHNSON, S. M

“…We are continuing development of the growth of midwave infrared (MWIR) HgCdTe by molecular-beam epitaxy (MBE) on 4-in. Si substrates and the fabrication of…”
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Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4 silicon substrates by VARESI, J. B, BORNFREUND, R. E, CHILDS, A. C, RADFORD, W. A, MARANOWSKI, K. D, PETERSON, J. M, JOHNSON, S. M, GIEGERICH, L. M, DE LYON, T. J, JENSEN, J. E

“…We have developed the capability to grow HgCdTe mid-wave infrared radiation double-layer heterojunctions (MWIR DLHJs) on 4″ Si wafers by molecular beam epitaxy…”
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HgCdTe/Si materials for long wavelength infrared detectors by JOHNSON, S. M, BUELL, A. A, ROSBECK, J. P, DE LYON, T. J, JENSEN, J. E, NATHAN, V, VILELA, M. F, PETERSON, J. M, VARESI, J. B, NEWTON, M. D, VENZOR, G. M, BORNFREUND, R. E, RADFORD, W. A, SMITH, E. P. G

“…The heteroepitaxial growth of HgCdTe on large-area Si substrates is an enabling technology leading to the production of low-cost, large-format infrared focal…”
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A langmuir probe investigation of electron cyclotron resonance argon-hydrogen plasmas by STOLTZ, A. J, SPERRY, M. J, BENSON, J. D, VARESI, J. B, MARTINKA, M, ALMEIDA, L. A, BOYD, P. R, DINAN, J. H

“…We report on the physical attributes of an argon-hydrogen plasma and the effects that induced changes in these attributes have on the physical and electrical…”
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The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe by STOLTZ, A. J, BENSON, J. D, BOYD, P. R, MARTINKA, M, VARESI, J. B, KALECZYC, A. W, SMITH, E. P. G, JOHNSON, S. M, RADFORD, W. A, DINAN, J. H

“…Values of the aspect ratio for trenches etched into HgCdTe by an ECR plasma containing H and Ar are limited by the phenomenon of etch lag. Modeling this plasma…”
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Investigation of HgCdTe surface films and their removal by VARESI, J. B, BENSON, J. D, JAIME-VASQUEZ, M, MARTINKA, M, STOLTZ, A. J, DINAN, J. H

“…We have examined the formation and removal of native surface films on Hg^sub 1-x^Cd^sub x^Te (n-type, x = 0.2). Samples were etched with a Br-based solution…”
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Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication by SMITH, E. P. G, VENZOR, G. M, DINAN, J. H, RADFORD, W. A, NEWTON, M. D, LIGUORI, M. V, GLEASON, J. K, BORNFREUND, R. E, JOHNSON, S. M, BENSON, J. D, STOLTZ, A. J, VARESI, J. B

“…Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe mesa etching and shallow CdTe…”
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Physical structure of molecular-beam epitaxy growth defects in HgCdTe and their impact on two-color detector performance by BUELL, A. A, PHAM, L. T, DE LEON, T, ROTH, J. A, JENSEN, J. E, NEWTON, M. D, VENZOR, G. M, NORTON, E. M, SMITH, E. P, VARESI, J. B, HARPER, V. B, JOHNSON, S. M, COUSSA, R. A

“…The flexible nature of molecular-beam epitaxy (MBE) growth is beneficial for HgCdTe infrared-detector design and allows for tailored growths at lower costs and…”
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Surface structure of (111)A HgCdTe by BENSON, J. D, VARESI, J. B, STOLTZ, A. J, SMITH, E. P. G, JOHNSON, S. M, JAIME-VASQUEZ, M, MAEKUNAS, J. K, ALMEIDA, L. A, MOLSTAD, J. C

“…The surface of (111)A HgCdTe has been studied by reflection high-energy electron diffraction and atomic force microscopy (AFM). The as-grown liquid-phase…”
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Determination of the ion angular distribution for electron cyclotron resonance, plasma-etched HgCdTe trenches by BENSON, J. D, STOLTZ, A. J, VARESI, J. B, MARTINKA, M, KALECZYC, A. W, ALMEIDA, L. A, BOYD, P. R, DINAN, J. H

“…Ion angular distribution (IAD) affects the width and aspect ratio in electron cyclotron resonance (ECR)-etched HgCdTe trenches. The IAD was determined by…”
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Investigation of HgCdTe surface quality following br-based etching for device fabrication using spectroscopic ellipsometry by VARESI, J. B, BENSON, J. D, MARTINKA, M, STOLTZ, A. J, MASON, W. E, ALMEIDA, L. A, KALECZYC, A. W, BOYD, P. R, DINAN, J. H

“…We have examined the etching of HgCdTe (x = 0.2) with bromine/ethylene glycol (Br/EG) solutions. Using a spectroscopic ellipsometer, we tracked the…”
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Threading dislocation removal from the near-surface region of epitaxial cadmium telluride on silicon by lithographic patterning of the substrate by MOLSTAD, J. C, BENSON, J. D, MARKUNAS, J. K, VARESI, J. B, BOYD, P. R, DINAN, J. H

“…(211) oriented silicon substrates were patterned and etched to give mesas of various sizes and shapes. Cadmium telluride epitaxial layers were deposited on the…”
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Surface structure of plasma-etched (211)B HgCdTe by BENSON, J. D, STOLTZ, A. J, DINAN, J. H, VARESI, J. B, ALMEIDA, L. A, SMITH, E. P. G, JOHNSON, S. M, MARTINKA, M, KALECZYC, A. W, MARKUNAS, J. K, BOYD, P. R

“…The surface of (211)B HgCdTe has been studied by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). RHEED analysis of the…”
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Scalability of dry-etch processing for small unit-cell HgCdTe focal-plane arrays by SMITH, E. P. G, VENZOR, G. M, DINAN, J. H, GOETZ, P. M, VARESI, J. B, PHAM, L. T, PATTEN, E. A, RADFORD, W. A, JOHNSON, S. M, STOLTZ, A. J, BENSEN, J. D

“…A combination of mechanical experiments and fabrication of very-long wavelength ir (VLWIR) HgCdTe-ir detectors has been used to investigate the interaction…”
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Macro-loading effects of electron-cyclotron resonance etched II-VI materials by STOLTZ, A. J, BENSON, J. D, VARESI, J. B, MARTINKA, M, SPERRY, M. J, KALECZYC, A. W, ALMEIDA, L. A, BOYD, P. R, DINAN, J. H

“…It has been observed in semiconductor processing that the etch rates for materials subjected to an electron-cyclotron resonance (ECR) plasma change with the…”
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Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenches by BENSON, J. D, STOLTZ, A. J, DINAN, J. H, BOYD, P. R, MARTINKA, M, VARESI, J. B, ALMEIDA, L. A, OLVER, K. A, KALECZYC, A. W, JOHNSON, S. M, RADFORD, W. A

“…Factors that affect width and aspect ratio in ECR etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist…”
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Developments in the fabrication and performance of high-quality HgCdTe detectors grown on 4-in. Si substrates by VARESI, J. B, BUELL, A. A, BORNFREUND, R. E, RADFORD, W. A, PETERSON, J. M, MARANOWSKI, K. D, JOHNSON, S. M, KINGI, D. F

“…We are continuing to develop our growth and processing capabilities for HgCdTe grown on 4-in. Si substrates by molecular beam epitaxy (MBE). Both short-wave…”
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