Search Results - "VANHEUSDEN, K"
-
1
Correlation between photoluminescence and oxygen vacancies in ZnO phosphors
Published in Applied physics letters (15-01-1996)“…By combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the…”
Get full text
Journal Article -
2
Green photoluminescence efficiency and free-carrier density in ZnO phosphor powders prepared by spray pyrolysis
Published in Journal of luminescence (01-07-1997)“…Electron paramagnetic resonance, optical absorption, and photoluminescence spectroscopy have been combined to characterize ZnO powders that were prepared by…”
Get full text
Journal Article -
3
Non-volatile memory device based on mobile protons in SiO2 thin films
Published in Nature (London) (10-04-1997)“…Mobile H+ ions introduced by annealing into the buried oxide layer of Si/SiO2/Si structures, rather than being detrimental, can form the basis of a…”
Get full text
Journal Article -
4
Associations between ethnicity and self-reported hallucinations in a population sample of young adults in The Netherlands
Published in Psychological medicine (01-08-2008)“…Psychotic disorders are more common in people from ethnic minorities. If psychosis exists as a continuous phenotype, ethnic disparities in psychotic disorder…”
Get more information
Journal Article -
5
M1052 Quality of Life and Psychological Distress in Patients With Peutz-Jeghers Syndrome
Published in Gastroenterology (New York, N.Y. 1943) (2010)Get full text
Journal Article -
6
Quality of life and psychological distress in patients with Peutz-Jeghers syndrome
Published in Clinical genetics (01-09-2010)“…van Lier MGF, Mathus‐Vliegen EMH, van Leerdam ME, Kuipers EJ, Looman CWN, Wagner A, Vanheusden K. Quality of life and psychological distress in patients with…”
Get full text
Journal Article -
7
Alignment of defect dipoles in polycrystalline ferroelectrics
Published in Applied physics letters (18-09-1995)“…Using electron paramagnetic resonance (EPR), we show the alignment of defect dipoles along the direction of the spontaneous polarization in polycrystalline…”
Get full text
Journal Article -
8
Impact of Pb doping on the optical and electronic properties of ZnO powders
Published in Applied physics letters (28-08-1995)“…Electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb-doped ZnO ceramic…”
Get full text
Journal Article -
9
The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si–SiO2 interface
Published in Applied physics letters (22-05-2000)“…It is demonstrated that a 450 °C anneal in hydrogen, known to passivate traps at the Si–SiO2 interface, can impede the generation of mobile protons during a…”
Get full text
Journal Article -
10
Positive charging of buried SiO2 by hydrogenation
Published in Applied physics letters (09-05-1994)“…Simple hydrogen annealing of the buried oxide (BOX) of state-of-the-art separation by implanted oxygen material in the range 450–700 °C was found to introduce…”
Get full text
Journal Article -
11
Mechanism for anneal-induced interfacial charging in SiO2 thin films on Si
Published in Applied physics letters (20-05-1996)“…H-induced positive charging is observed at both the top Si/SiO2 and bottom SiO2/Si interfaces in Si/SiO2/Si structures. The response of the H-induced positive…”
Get full text
Journal Article -
12
Correlation of mobile and fixed charge creation in protonated field-effect transistors
Published in Applied physics letters (24-07-2000)“…Protons have been introduced into the 40 nm gate oxides of n-channel metal–oxide–semiconductor field-effect transistors, resulting in the creation of mobile…”
Get full text
Journal Article -
13
H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures
Published in Journal of non-crystalline solids (01-08-1997)Get full text
Journal Article -
14
Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films
Published in Applied physics letters (03-08-1998)“…The chemical kinetics of mobile-proton reactions in the SiO2 film of Si/SiO2/Si structures were analyzed as a function of forming-gas anneal parameters in the…”
Get full text
Journal Article -
15
Observation of a delocalized E' center in buried SiO2
Published in Applied physics letters (10-05-1993)“…The oxygen-vacancy defect (E′) generated at the surface of buried SiO2 (BOX) layers of the separation by implantation of oxygen structure has been studied by…”
Get full text
Journal Article -
16
Thermally activated electron capture by mobile protons in SiO2 thin films
Published in Applied physics letters (05-01-1998)“…The annihilation of mobile protons in thin SiO2 films by capture of ultraviolet-excited electrons has been analyzed for temperatures between 77 and 500 K. We…”
Get full text
Journal Article -
17
Impact of supplemental implantation of oxygen on defect centers in the separation by implantation of oxygen structure
Published in Applied physics letters (04-09-1995)“…The influence of supplemental O+ implantation on standard separation-by-implantation of oxygen (SIMOX) structures in terms of inherent defects has been…”
Get full text
Journal Article -
18
Defect generation sensitivity depth profile in buried SiO2 using Ar plasma exposure
Published in Applied physics letters (03-05-1993)“…The sensitivity to oxygen-vacancy defect (E′) generation of buried SiO2 (BOX) layers in separation by implantation of oxygen (SIMOX) structures is studied by…”
Get full text
Journal Article -
19
Shallow donor in separation by implantation of oxygen structures revealed by electric-field modulated electron spin resonance
Published in Applied physics letters (18-01-1993)“…Electric-field modulated K-band electron spin resonance measurements on Si/SiO2/Si structures, formed by implantation of oxygen (SIMOX), were carried out at…”
Get full text
Journal Article -
20
A New Metastable Thin-Film Strontium Tantalate Perovskite
Published in Journal of the American Ceramic Society (01-08-1999)“…A novel Sr‐Ta‐O perovskite phase has been synthesized by a chemical preparation route and crystallized on Pt‐coated SiO2/Si substrates at ∼800°C. The phase was…”
Get full text
Journal Article