Search Results - "VANHEUSDEN, K"

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  1. 1

    Correlation between photoluminescence and oxygen vacancies in ZnO phosphors by Vanheusden, K., Seager, C. H., Warren, W. L., Tallant, D. R., Voigt, J. A.

    Published in Applied physics letters (15-01-1996)
    “…By combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the…”
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  2. 2

    Green photoluminescence efficiency and free-carrier density in ZnO phosphor powders prepared by spray pyrolysis by Vanheusden, K., Seager, C.H., Warren, W.L., Tallant, D.R., Caruso, J., Hampden-Smith, M.J., Kodas, T.T.

    Published in Journal of luminescence (01-07-1997)
    “…Electron paramagnetic resonance, optical absorption, and photoluminescence spectroscopy have been combined to characterize ZnO powders that were prepared by…”
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  3. 3

    Non-volatile memory device based on mobile protons in SiO2 thin films by Vanheusden, K, Warren, W L, Devine, R A B, Fleetwood, D M

    Published in Nature (London) (10-04-1997)
    “…Mobile H+ ions introduced by annealing into the buried oxide layer of Si/SiO2/Si structures, rather than being detrimental, can form the basis of a…”
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  4. 4

    Associations between ethnicity and self-reported hallucinations in a population sample of young adults in The Netherlands by Vanheusden, K, Mulder, C L, van der Ende, J, Selten, J-P, van Lenthe, F J, Verhulst, F C, Mackenbach, J P

    Published in Psychological medicine (01-08-2008)
    “…Psychotic disorders are more common in people from ethnic minorities. If psychosis exists as a continuous phenotype, ethnic disparities in psychotic disorder…”
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  6. 6

    Quality of life and psychological distress in patients with Peutz-Jeghers syndrome by Van Lier, MGF, Mathus-Vliegen, EMH, Van Leerdam, ME, Kuipers, EJ, Looman, CWN, Wagner, A, Vanheusden, K

    Published in Clinical genetics (01-09-2010)
    “…van Lier MGF, Mathus‐Vliegen EMH, van Leerdam ME, Kuipers EJ, Looman CWN, Wagner A, Vanheusden K. Quality of life and psychological distress in patients with…”
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  7. 7

    Alignment of defect dipoles in polycrystalline ferroelectrics by Warren, W. L., Dimos, D., Pike, G. E., Vanheusden, K., Ramesh, R.

    Published in Applied physics letters (18-09-1995)
    “…Using electron paramagnetic resonance (EPR), we show the alignment of defect dipoles along the direction of the spontaneous polarization in polycrystalline…”
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  8. 8

    Impact of Pb doping on the optical and electronic properties of ZnO powders by Vanheusden, K., Warren, W. L., Voigt, J. A., Seager, C. H., Tallant, D. R.

    Published in Applied physics letters (28-08-1995)
    “…Electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb-doped ZnO ceramic…”
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  9. 9

    The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si–SiO2 interface by Vanheusden, K., Devine, R. A. B.

    Published in Applied physics letters (22-05-2000)
    “…It is demonstrated that a 450 °C anneal in hydrogen, known to passivate traps at the Si–SiO2 interface, can impede the generation of mobile protons during a…”
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  10. 10

    Positive charging of buried SiO2 by hydrogenation by Vanheusden, K., Stesmans, A.

    Published in Applied physics letters (09-05-1994)
    “…Simple hydrogen annealing of the buried oxide (BOX) of state-of-the-art separation by implanted oxygen material in the range 450–700 °C was found to introduce…”
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  11. 11

    Mechanism for anneal-induced interfacial charging in SiO2 thin films on Si by Warren, W. L., Vanheusden, K., Schwank, J. R., Fleetwood, D. M., Winokur, P. S., Devine, R. A. B.

    Published in Applied physics letters (20-05-1996)
    “…H-induced positive charging is observed at both the top Si/SiO2 and bottom SiO2/Si interfaces in Si/SiO2/Si structures. The response of the H-induced positive…”
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  12. 12

    Correlation of mobile and fixed charge creation in protonated field-effect transistors by Devine, R. A. B., Vanheusden, K., Herrera, G. V.

    Published in Applied physics letters (24-07-2000)
    “…Protons have been introduced into the 40 nm gate oxides of n-channel metal–oxide–semiconductor field-effect transistors, resulting in the creation of mobile…”
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  13. 13
  14. 14

    Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films by Vanheusden, K., Warren, W. L., Fleetwood, D. M., Schwank, J. R., Shaneyfelt, M. R., Draper, B. L., Winokur, P. S., Devine, R. A. B., Archer, L. B., Brown, G. A., Wallace, R. M.

    Published in Applied physics letters (03-08-1998)
    “…The chemical kinetics of mobile-proton reactions in the SiO2 film of Si/SiO2/Si structures were analyzed as a function of forming-gas anneal parameters in the…”
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  15. 15

    Observation of a delocalized E' center in buried SiO2 by VANHEUSDEN, K, STESTMANS, A

    Published in Applied physics letters (10-05-1993)
    “…The oxygen-vacancy defect (E′) generated at the surface of buried SiO2 (BOX) layers of the separation by implantation of oxygen structure has been studied by…”
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  16. 16

    Thermally activated electron capture by mobile protons in SiO2 thin films by Vanheusden, K., Karna, S. P., Pugh, R. D., Warren, W. L., Fleetwood, D. M., Devine, R. A. B., Edwards, A. H.

    Published in Applied physics letters (05-01-1998)
    “…The annihilation of mobile protons in thin SiO2 films by capture of ultraviolet-excited electrons has been analyzed for temperatures between 77 and 500 K. We…”
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  17. 17

    Impact of supplemental implantation of oxygen on defect centers in the separation by implantation of oxygen structure by Vanheusden, K., Stesmans, A.

    Published in Applied physics letters (04-09-1995)
    “…The influence of supplemental O+ implantation on standard separation-by-implantation of oxygen (SIMOX) structures in terms of inherent defects has been…”
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  18. 18

    Defect generation sensitivity depth profile in buried SiO2 using Ar plasma exposure by Stesmans, A., Vanheusden, K.

    Published in Applied physics letters (03-05-1993)
    “…The sensitivity to oxygen-vacancy defect (E′) generation of buried SiO2 (BOX) layers in separation by implantation of oxygen (SIMOX) structures is studied by…”
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  19. 19

    Shallow donor in separation by implantation of oxygen structures revealed by electric-field modulated electron spin resonance by VANHEUSDEN, K, STESMANS, A

    Published in Applied physics letters (18-01-1993)
    “…Electric-field modulated K-band electron spin resonance measurements on Si/SiO2/Si structures, formed by implantation of oxygen (SIMOX), were carried out at…”
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  20. 20

    A New Metastable Thin-Film Strontium Tantalate Perovskite by Rodriguez, Mark A., Boyle, Timothy J., Hernandez, Bernadette A., Tallant, David R., Vanheusden, Karel

    Published in Journal of the American Ceramic Society (01-08-1999)
    “…A novel Sr‐Ta‐O perovskite phase has been synthesized by a chemical preparation route and crystallized on Pt‐coated SiO2/Si substrates at ∼800°C. The phase was…”
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