Search Results - "VAN HOVE, Marleen"

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by Wu, Tian-Li, Marcon, Denis, Bakeroot, Benoit, De Jaeger, Brice, Lin, H. C., Franco, Jacopo, Stoffels, Steve, Van Hove, Marleen, Roelofs, Robin, Groeseneken, Guido, Decoutere, Stefaan

“…In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-gm), and positive gate bias stress) were used to…”
Get full text

Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates by Van Hove, Marleen, Posthuma, Niels, Geens, Karen, Wellekens, Dirk, Li, Xiangdong, Decoutere, Stefaan

“…p-GaN gate enhancement mode power transistors were processed in a Si CMOS processing line on 200 mm Si(111) substrates using Au-free metallization schemes…”
Get full text

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs by Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Ruzzarin, Maria, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si metal-insulator-semiconductor high electron mobility…”
Get full text

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs by Borga, Matteo, Meneghini, Matteo, Rossetto, Isabella, Stoffels, Steve, Posthuma, Niels, Van Hove, Marleen, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper demonstrates and investigates the time-dependent vertical breakdown of GaN-on-Si power transistors. The study is based on electrical…”
Get full text

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate by Jie Hu, Stoffels, Steve, Lenci, Silvia, Bakeroot, Benoit, De Jaeger, Brice, Van Hove, Marleen, Ronchi, Nicolo, Venegas, Rafael, Hu Liang, Ming Zhao, Groeseneken, Guido, Decoutere, Stefaan

“…In this paper, a further leakage reduction of AlGaN/GaN Schottky barrier diodes with gated edge termination (GET-SBDs) has been achieved by optimizing the…”
Get full text

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs by Bisi, Davide, Meneghini, Matteo, Marino, Fabio Alessio, Marcon, Denis, Stoffels, Steve, Van Hove, Marleen, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter reports an extensive analysis of the charge capture transients induced by OFF-state bias in double heterostructure AlGaN/GaN MIS- high electron…”
Get full text

Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates by Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Bakeroot, Benoit, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan

“…To get a better insight into the vertical leakage mechanism of GaN-on-Si, the carrier transport from n + , n, p + , and p-Si(111) substrates through the AlN…”
Get full text

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon by Van Hove, M., Boulay, S., Bahl, S. R., Stoffels, S., Xuanwu Kang, Wellekens, D., Geens, K., Delabie, A., Decoutere, S.

“…We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors. The process starts…”
Get full text

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration by Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Geens, Karen, Guo, Weiming, You, Shuzhen, Stoffels, Steve, Lempinen, Vesa-Pekka, Sormunen, Jaakko, Groeseneken, Guido, Decoutere, Stefaan

“…The backgating effect on trench-isolated enhancement-mode p-GaN devices fabricated on 200-mm GaN-on-SOI was investigated. We show that to minimize the…”
Get full text

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress by Ruzzarin, Maria, Meneghini, Matteo, Rossetto, Isabella, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter demonstrates that GaN-based MIS-HEMTs submitted to stress with high-temperature, high drain bias, and constant source current (HTSC stress) may…”
Get full text

Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates by Firrincieli, Andrea, De Jaeger, Brice, You, Shuzhen, Wellekens, Dirk, Van Hove, Marleen, Decoutere, Stefaan

“…We report on the fabrication and characterization of Au-free Ti/Al/TiN-based ohmic contacts on 200 mm AlGaN/GaN epilayers for power devices. Materials and…”
Get full text

Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate by Bisi, Davide, Meneghini, Matteo, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Wu, Tian-Li, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…In this work we report on the three dominant trapping mechanisms affecting the dynamic performance of a double‐heterostructure GaN‐based MIS‐HEMT grown on…”
Get full text

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance by Visalli, Domenica, Hove, Marleen Van, Derluyn, Joff, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

Get full text

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal by Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

“…The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate…”
Get full text

A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si by Das, J., Everts, J., Van Den Keybus, J., Van Hove, M., Visalli, D., Srivastava, P., Marcon, D., Kai Cheng, Leys, M., Decoutere, S., Driesen, J., Borghs, G.

“…III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the…”
Get full text

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs by Tian-Li Wu, Franco, Jacopo, Marcon, Denis, De Jaeger, Brice, Bakeroot, Benoit, Stoffels, Steve, Van Hove, Marleen, Groeseneken, Guido, Decoutere, Stefaan

“…In this paper, fully recessed-gate GaN MISFETs with two different gate dielectrics, i.e., plasma-enhanced atomic layer deposition (PEALD) SiN and ALD Al 2 O 3…”
Get full text

Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage by Srivastava, Puneet, Das, Jo, Visalli, Domenica, Derluyn, Joff, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Geens, Karen, Kai Cheng, Degroote, Stefan, Leys, Maarten, Germain, Marianne, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf

“…In this letter, we present a novel approach to enhance the breakdown voltage ( V BD ) for AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs), grown by…”
Get full text

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress by Wu, Tian-Li, Marcon, Denis, Stoffels, Steve, You, Shuzhen, De Jaeger, Brice, Van Hove, Marleen, Groeseneken, Guido, Decoutere, Stefaan

“…The reliability of Au-free Ohmic contacts has been evaluated under a constant current stress (500mA/mm) in a high temperature environment (150°C, 175°C, and…”
Get full text

Electrically active defects at AlN/Si interface studied by DLTS and ESR by Simoen, Eddy, Visalli, Domenica, Van Hove, Marleen, Leys, Maarten, Favia, Paola, Bender, Hugo, Borghs, Gustaaf, Nguyen, Ahn Puc Duc, Stesmans, Andre

“…A combined deep‐level transient spectroscopy (DLTS) and electron spin resonance (ESR) study is performed to identify the electrically active defects at the…”
Get full text

Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs by Visalli, D, Van Hove, M, Derluyn, J, Srivastava, P, Marcon, D, Das, J, Leys, M R, Degroote, S, Kai Cheng, Vandenplas, E, Germain, M, Borghs, G

“…We investigated the limitations of the field plate (FP) effect on breakdown voltage V BD that is due to the silicon substrate in AlGaN/GaN/AlGaN double…”
Get full text