Search Results - "VAN DORT, M. J"

Vertebral bone attenuation in Hounsfield Units and prevalent vertebral fractures are associated with the short-term risk of vertebral fractures in current and ex-smokers with and without COPD: a 3-year chest CT follow-up study by van Dort, M.J., Driessen, J.H.M., Geusens, P., Romme, E.A.P.M., Smeenk, F.W.J.M., Wouters, E.F.M., van den Bergh, J.P.W.

“…Summary CT scans performed to evaluate chronic obstructive pulmonary disease (COPD) also enable evaluation of bone attenuation (BA; a measure of bone density)…”
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Association between vertebral fractures and coronary artery calcification in current and former smokers in the ECLIPSE cohort by van Dort, M. J., Driessen, J. H. M., Geusens, P., Romme, E. A. P. M., Smeenk, F. W. J. M., Rahel, B. M., Eisman, J. A., Wouters, E. F. M., van den Bergh, J. P. W.

“…Summary In smokers and former smokers from the ECLIPSE cohort, there is an association between prevalent vertebral fractures (VFs) and coronary artery…”
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Associations between bone attenuation and prevalent vertebral fractures on chest CT scans differ with vertebral fracture locations by Driessen, J.H.M., van Dort, M.J., Romme, E.A.P.M., Wouters, E.F.M., Smeenk, F.W.J.M., van Rietbergen, B., van den Bergh, J.P.W., Geusens, P.

“…Summary Vertebral fracture (VF) locations are bimodally distributed in the spine. The association between VF and bone attenuation (BA) measured on chest CT…”
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Diagnosis of vertebral deformities on chest CT and DXA compared to routine lateral thoracic spine X-ray by van Dort, M. J., Romme, E. A. P. M., Smeenk, F. W. J. M., Geusens, P. P. P. M., Wouters, E. F. M., van den Bergh, J. P.

“…Summary X-ray, CT and DXA enable diagnosis of vertebral deformities. For this study, level of agreement of vertebral deformity diagnosis was analysed. We…”
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Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs by van Dort, M.J., Woerlee, P.H., Walker, A.J., Juffermans, C.A.H., Lifka, H.

“…The high levels of substrate doping needed in deep-submicrometer MOS devices affect device properties strongly. The authors present a detailed experimental…”
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High-resolution optical study of a point-contact-induced phonon hot spot in ruby by TROOST, K. Z, VAN DORT, M. J, DIJKHUIS, J. I, DE WIJN, H. W

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Local magnetizations in the competing-anisotropy system K2CoxFe1-xF4: NMR investigation by VLAK, W. A. H. M, VAN DORT, M. J, ARTS, A. F. M, DE WIJN, H. W

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Spectral transport of nonequilibrium 29-cm-1 phonons in ruby studied by fluorescence line narrowing by VAN DORT, M. J, DIJKHUIS, J. I, DE WIJN, H. W

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Effects of high normal electric fields in deep submicron MOSFET's by van Dort, M.J., Woerlee, P.H., Walker, A.J., Juffermans, C.A.H., Lifka, H.

“…The implications of high normal electric fields in MOSFET's on device simulations are discussed. Comparison of simulations with data of experimental MOS…”
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New technique for measuring two-dimensional oxidation-enhanced diffusion in silicon at low temperatures by van Dort, M. J., Lifka, H., Zalm, P. C., de Boer, W. B., Woerlee, P. H., Slotboom, J. W., Cowern, N. E. B.

“…In this letter, a new high-resolution technique is presented for determining the lateral extent of oxidation-enhanced diffusion (OED). A periodic grid of lines…”
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Lifetime calculations of MOSFETs using depth-dependent non-local impact ionization by van Dort, M.J., Slotboom, J.W., Streutker, G., Woerlee, P.H.

“…In this paper, we present a simple but accurate engineering tool for optimizing the lifetime of MOSFETs against hot carrier degradation. The method consists of…”
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Physical Modelling and Simulation of Advanced Si-devices - An Industrial Approach by Slotboom, J. W., van Dort, M. J., Hurkx, G. A. M., Klaassen, D. B. M., Kloosterman, W. J., van Rijs, F., Streutker, G., Velghe, R. M. D.

“…A review is given of our recently improved physical models for device simulators. They have been implemented in MEDICI and MINIMOS. Examples of actual MOS and…”
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Non-local impact ionization in silicon devices by Slotboom, J.W., Streutker, G., van Dort, M.J., Woerlee, P.H., Pruijmboom, A., Gravesteijn, D.J.

“…In small bipolar and MOS transistors, the electrons gain much less energy than according to the maximum electric field. This is due to nonlocal electron…”
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Circuit sensitivity analysis in terms of process parameters by van Dort, M.J., Klaassen, D.B.M.

“…A new methodology for sensitivity analysis at circuit level in terms of process parameters is presented. Response functions for long-channel MOSFETs are found…”
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Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping by van Dort, M.J., Woerlee, P.H., Walker, A.J., Juffermans, C.A.H., Lifka, H.

“…The impact of high doping levels on the threshold voltage of MOS transistors is discussed. The threshold voltage of surface channel devices is shown to be…”
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Local magnetizations in the competing-anisotropy system K 2 Co x Fe 1 − x F 4 : NMR investigation by Vlak, W. A. H. M., van Dort, M. J., Arts, A. F. M., de Wijn, H. W.

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Two-dimensional transient enhanced diffusion and its impact on bipolar transistors by van Dort, M.J., van der Wel, W., Slotboom, J.W., Cowern, N.E.B., Knuvers, M.P.G., Lifka, H., Zalm, P.C.

“…The impact of transient-enhanced diffusion (TED) and oxidation-enhanced diffusion (OED) on the device performance of advanced Si devices has long been…”
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A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon by van Dort, M.J., Lifka, H., Zalm, P.C., de Kruif, R.C.M., de Boer, W.B., Woerlee, P.H., Juffermans, C.A.H., Walker, A.J., Slotboom, J.W., Cowern, N.E.B.

“…A new method for the determination of two-dimensional oxidation-enhanced diffusion (OED) is presented. The resolution of the technique in the lateral direction…”
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