Search Results - "VAN DELFT, FCMJM"

The influence of nanoscale topographical cues on initial osteoblast morphology and migration by Lamers, E, van Horssen, R, te Riet, J, van Delft, F Cmjm, Luttge, R, Walboomers, X F, Jansen, J A

“…The natural environment of a living cell is not only organized on a micrometer, but also on a nanometer scale. Mimicking such a nanoscale topography in…”
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The threshold at which substrate nanogroove dimensions may influence fibroblast alignment and adhesion by Loesberg, W.A, te Riet, J, van Delft, F.C.M.J.M, Schön, P, Figdor, C.G, Speller, S, van Loon, J.J.W.A, Walboomers, X.F, Jansen, J.A

“…Abstract The differences in morphological behaviour between fibroblasts cultured on smooth and nanogrooved substrata (groove depth: 5–350 nm, width: 20–1000…”
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Manufacturing substrate nano-grooves for studying cell alignment and adhesion by van Delft, F.C.M.J.M., van den Heuvel, F.C., Loesberg, W.A., te Riet, J., Schön, P., Figdor, C.G., Speller, S., van Loon, J.J.W.A., Walboomers, X.F., Jansen, J.A.

“…Nano-scale pattern templates have been manufactured in order to study the differences in cell behaviour between fibroblasts cultured on smooth and on grooved…”
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Nanoscale electrode gaps to study single molecule conduction by van Zalinge, H., van Delft, F.C.M.J.M., Weemaes, R.G.R., van Thiel, E.F.M.J., Snijder, J., Nicolau, D.V.

“…The fabrication of electrode pairs with a small electrode gap separation using a focussed-ion-beam is reported. Using a previously developed technique, the gap…”
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Image reversal revisited by van Delft, F.C.M.J.M., van der Kruis, F.J.H., Roosen, H.H.A.J., van de Laar, H.W.J.J.

“…Image reversal methods can be useful in those cases, where a resist of a specific tone is lacking particular desirable properties, e.g. etch resistance…”
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Hydrogen SilsesQuioxane, a high-resolution negative tone e-beam resist, investigated for its applicability in photon-based lithographies by Peuker, M., Lim, M.H., Smith, Henry I., Morton, R., van Langen-Suurling, A.K., Romijn, J., van der Drift, E.W.J.M., van Delft, F.C.M.J.M.

“…Hydrogen SilsesQuioxane (HSQ) has previously been shown to behave as a high-resolution negative tone inorganic e-beam resist, giving single lines less than 10…”
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Micro-contact printing on oxide surfaces for model catalysts using e-beam written masters in hydrogen silsesquioxane by van Delft, F.C.M.J.M., van den Heuvel, F.C., Kuiper, A.E.T., Thüne, P.C., Niemantsverdriet, J.W.

“…In order to make model catalysts for fundamental research in heterogeneous catalysis, carrier oxide surfaces with well-defined properties are needed…”
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Silicon-containing copolymers of MMA tested for a positive-tone high-resolution bi-layer e-beam resist system by Maessen, J., van den Boogaart, S., Verstegen, E.J.K., Kloosterboer, J.G., van Delft, F.C.M.J.M., Catsburg, W., Habraken, F.H.P.M.

“…Copolymers of methylmethacrylate (MMA) and trimethylsilyl-methylmethacrylate (SiMMA) in various molar ratios have been synthesised and characterised for use as…”
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Bilayer resist used in e-beam lithography for deep narrow structures by van Delft, Falco C.M.J.M.

“…A bilayer reist system developed by Olin Microelectronic Materials, consisting of a UV curable polystyrene bottom coat and a silicon loaded UV sensitive…”
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Classification of impact-assisted etch mechanisms by van Delft, Falco C.M.J.M., Giesbers, J.Ben

“…Previously, a mechanistic framework has been constructed for impact-assisted etch reactions in e.g. Reactive Ion Etching. The consecutive reaction steps…”
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DUV resists in negative tone high resolution electron beam lithography by van Delft, Falco C.M.J.M., Holthuysen, Frans G.

“…Shipley's chemically amplified DUV resists UVN-2 (negative tone) and UV-5 (positive tone) have been studied for their high resolution capabilities in electron…”
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Comparison of negative tone resists NEB22 and UVN30 in e-beam lithography by van Dodewaard, A.J., Ketelaars, W.S.M.M., Roes, R.F.M., Kwinten, J.A.J., van Delft, F.C.M.J.M., van Run, A.J., van Langen-Suurling, A.K., Romijn, J.

“…The negative tone resists NEB22 and UVN30 have been studied for their contrast and resolution in e-beam lithography, as well as in 248 nm DUV lithography…”
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Submicron YBa2Cu3O(7-delta)-Ag-YBa2Cu3O(7-delta) superconducting proximity junctions by Gijs, M A M, Giesbers, J B, VAN DELFT, FCMJM, TIMMERING, C E, Gerrits, A M, Slob, A

“…A deep submicron structuring process for oxide superconducting films has been used to fabricate planar YBa2Cu3O(7-delta)-Ag-YBa2Cu3O(7-delta) proximity…”
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Development of a 100 nm gate power HEMT using four-layer resist and flexible e-beam exposure strategies by Frijlink, P.M., Collet, A., Bellaiche, J., Iost, M., Verheijen, M.J., van Helleputte, H.R.J.R., Moors, W.G.J., van Delft, F.C.M.J.M.

“…A 100 nm gate length power HEMT has been fabricated, which can be applied in power amplifiers throughout the millimeter-wave spectrum, as well as in very low…”
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Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography by van Delft, Falco C. M. J. M., Weterings, Jos P., van Langen-Suurling, Anja K., Romijn, Hans

“…A bilayer resist system, consisting of hydrogen silsesquioxane (HSQ) as negative tone electron (e)-beam resist top coat and hard baked novolak resist as bottom…”
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Delay-time and aging effects on contrast and sensitivity of hydrogen silsesquioxane by van Delft, Falco C. M. J. M.

“…Hydrogen silsesquioxane (HSQ) has been shown to behave as a negative tone inorganic e-beam resist with a resolution better than 20 nm established. In this…”
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Composition and Properties of Platinum–Rhodium Alloy Surfaces by F. C. M. J. M. van Delft, Nieuwenhuys, B. E., Siera, J., Wolf, R. M.

“…The use of Pt–Rh based three-way catalysts for automotive exhaust gas control stimulated us to study the surface composition and surface properties of various…”
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Plasma etch mechanistic framework used for tribochemical reactions by VAN DELFT, F. C.. M. J. M, LASINSKI, P, THEUNISSEN, G. S. A. M

“…The mechanistic framework, previously used for plasma etching can also be applied to tribochemical processes. Although the impact processes in plasma etching…”
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Method for manufacturing nanoscale structures in transition metal layers by van Delft, Falco C. M. J. M., Ketelaars, W. S. M. M., Kroon, M., Lambregts, J.

“…In most transition metals, steeply profiled nanoscale structures can not easily be obtained by dry etching, due to the redeposition of the etch products. An…”
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