Search Results - "VAN DE WALLE, G. F. A"

Reactions of point defects and dopant atoms in silicon by COWEN, N. E. B, VAN DE WALLE, G. F. A, ZALM, P. C, OOSTRA, D. J

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Mechanisms of implant damage annealing and transient enhanced diffusion in Si by Cowern, N. E. B., van de Walle, G. F. A., Zalm, P. C., Vandenhoudt, D. W. E.

“…Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels…”
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Photoluminescence from Si/Ge superlattices by MONTIE, E. A, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A, BULLE-LIEUWMA, C. W. T

“…We have studied the luminescence of short-period Si/Ge superlattices of varying composition grown on a Si1−xGex alloy buffer layer. X-ray diffraction and…”
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New deep level luminescence bands observed from both a SiGe alloy layer and Si/Ge superlattice structures by HIGGS, V, LIGHTOWLERS, E. C, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, MONTIE, E. A

“…Photoluminescence measurements have been made on Si/Ge short period superlattice structures grown on a SiGe alloy buffer layer and on a similar SiGe alloy…”
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Experiments on atomic-scale mechanisms of diffusion by COWERN, N. E. B, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VRIEZEMA, C. J

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Impurity diffusion via an intermediate species : the B-Si system by COWERN, N. E. B, JANSSEN, K. T. F, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J

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Ge segregation at Si/Si1-xGex interfaces grown by molecular beam epitaxy by ZALM, P. C, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A

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A View of Surfaces from the Inside and the Outside: TEF and STM by Kempen, H van, Benistant, P A M, Walle, G F A van de, Wyder, P

“…Two methods which both make use of conduction electrons to study metal surfaces are described: the Scanning Tunneling Microscope (STM) and Transverse Electron…”
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Scanning tunneling microscopy on photoconductive semi-insulating GaAs by van de Walle, G. F. A., van Kempen, H., Wyder, P., Davidsson, P.

“…The increase in surface conductivity upon illumination of semi-insulating GaAs was used to enable surface-topography measurements with a scanning tunneling…”
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Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy by Pruijmboom, A., Slotboom, J.W., Gravesteijn, D.J., Fredriksz, C.W., van Gorkum, A.A., van de Heuvel, R.A., van Rooij-Mulder, J.M.L., Streutker, G., van de Walle, G.F.A.

“…High-quality SiGe heterojunction bipolar transistors (HBTs) have been fabricated using material grown by molecular beam epitaxy (MBE). The height of parasitic…”
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Structural characterization of an Sb delta-doping layer in silicon by SLIJKERMAN, W. F. J, ZAGWIJN, P. M, VAN DER VEEN, J. F, VAN GORKUM, A. A, VAN DE WALLE, G. F

“…Delta-function doped layers in Si have been prepared by deposition of Sb on Si(001) followed by solid phase epitaxy of Si. The morphology and the crystal…”
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Effect of interface quality on the electrical properties of p-Si/SiGe two-dimensional hole gas systems by MISHIMA, T, FREDRIKSZ, C. W, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN DEN HEUVEL, R. A, VAN GORKUM, A. A

“…Electrical properties have been examined for single Si/Si0.8Ge0.2 p-type modulation-doped heterostructures which have been grown by molecular beam epitaxy. It…”
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Ga delta-doping layers in silicon by ZAGWIJN, P. M, EROKHIN, Y. N, SLIJKERMAN, W. F. J, VAN DER VEEN, J. F, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A

“…Delta-doping layers in silicon have been made by deposition of 0.39 monolayer Ga on Si(001). The dopant atoms have been buried in the host crystal using a…”
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Comparison of transverse-electron-focusing and scanning-tunneling-microscopy measurements on Ag(001) and (011) surfaces by BENISTANT, P. A. M, VAN DE WALLE, G. F. A, VAN KEMPEN, H, WYDER, P

“…Chemically etched Ag (001) and (011) surfaces have been studied from inside the sample by transverse-electron-focusing (TEF) experiments and from outside the…”
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Ge segregation at Si/Si1− x Ge x interfaces grown by molecular beam epitaxy by Zalm, P. C., van de Walle, G. F. A., Gravesteijn, D. J., van Gorkum, A. A.

“…The interface quality of Si/Si1−xGex (0.08≤x≤0.33) interfaces grown by molecular beam epitaxy has been studied by means of secondary-ion mass spectrometry. Ge…”
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Effect of ritodrine on uteroplacental blood flow and cardiac output distribution in unanesthetized pregnant guinea pigs by van de Walle, A F, Martin, Jr, C B

“…The effects of ritodrine, 15 micrograms X min-1 X kg-1 infused intravenously for 2 hours, on cardiac output distribution and uteroplacental blood flow were…”
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The effect of a low-dose infusion of ritodrine on cardiac output distribution and uteroplacental blood flow in unanaesthetized pregnant guinea pigs by van de Walle, A F, Martin, Jr, C B

“…Cardiac output and its distribution were measured using the microsphere technique before and at 2 and 6 h during the infusion of ritodrine, 1.5 microgram X…”
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Effect of isoproterenol on uterine blood flow and cardiac output distribution in pregnant guinea pigs by van de Walle, A F, Martin, Jr, C B

“…The effects of isoproterenol, 0.05 micrograms X min-1 X kg-1 infused intravenously for 2 hours, on cardiac output distribution and uteroplacental blood flow…”
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