Search Results - "VAITKUS, J. V"

Carrier transport in SiC crystals and radiation detectors as affected by defect traps and inhomogeneities by Kažukauskas, V., Kalendra, V., Vaitkus, J.-V.

“…Carrier trapping and transport were investigated in 4H-SiC single crystals and radiation detectors produced from bulk vanadium-compensated semi-insulating…”
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Carrier transport and capture in GaN single crystals and radiation detectors and effect of the neutron irradiation by Kažukauskas, V., Kalendra, V., Vaitkus, J.-V.

“…Carrier transport and trapping were investigated in GaN single crystals and semi-insulating epitaxial MOCVD layers by thermally stimulated current (TSC) and…”
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Influence of irradiation by 24 GeV protons on the properties of 4H–SiC radiation detectors by Kažukauskas, V., Jasiulionis, R., Kalendra, V., Vaitkus, J.-V.

“…We had investigated the effects of the irradiation by 24 GeV protons with the doses from 10 13 cm − 2 up to 10 16 cm − 2 on the properties of radiation…”
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Influence of Irradiation by High-Energy Protons on GaN Detectors by Kažukauskas, V., Kalendra, V., Vaitkus, J.-V, Jasiulionis, R.

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The effect of irradiation with high-energy protons on 4H-SiC detectors by Kažukauskas, V., Jasiulionis, R., Kalendra, V., Vaitkus, J. -V.

“…The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 10{sup 16} cm{sup -2}) of 24-GeV protons is studied. Isotopes…”
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The non-exponential and non-Auger-like time dependence of non-equilibrium free carrier concentration decay in a semiconductor with two deep levels at high injection rates by Ža¸sinas, E., Vaitkus, J.V.

“…Theoretical analysis and numerical calculations of the system of equations which models the conduction band electron capture by two deep levels shows that at…”
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Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance by Fadeyev, V., Ely, S., Galloway, Z., Ngo, J., Parker, C., Sadrozinski, H.F.-W., Christophersen, M., Phlips, B.F., Pellegrini, G., Rafi, J.M., Quirion, D., Dalla Betta, G.-F., Boscardin, M., Casse, G., Gorelov, I., Hoeferkamp, M., Metcalfe, J., Seidel, S., Gaubas, E., Ceponis, T., Vaitkus, J.V.

“…We pursue scribe–cleave–passivate (SCP) technology for making “slim edge” sensors. The goal is to reduce the inactive region at the periphery of the devices…”
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Thermally stimulated currents in semi-insulating GaAs Schottky diodes and their simulation by KAVALIAUSKIENE, G, KAZUKAUSKAS, V, RINKEVICIUS, V, STORASTA, J, VAITKUS, J. V, BATES, R, O'SHEA, V, SMITH, K. M

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Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures by Mikulskas, I, Brinkmann, D, Luterova, K, Tomasiunas, R, Hönerlage, B, Vaitkus, J.V, Aulombard, R.L, Cloitre, T

“…In this paper we present measurements of light amplification in optically pumped ZnCdSe graded refraction index separate confinement heterostructures…”
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Properties of CdS nanocrystallites embedded in to thin ZrO2 waveguides by MIKULSKAS, I, BERNSTEIN, E, PLENET, J. C, BOVIER, C, TOMASIUNAS, R, GRIVICKAS, V, VAITKUS, J. V, MUGNIER, J, DUMAS, J

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Variation of defect spectra in Si ionizing radiation detectors depending on irradiation by Kalendra, V., Kažukauskas, V., Vainorius, N., Vaitkus, J. V., Bozhko, V.

“…The defect properties of Si ionizing radiation detectors were investigated depending on the irradiation by high energy neutrons. The investigations were…”
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Formation of ohmic contacts on semi-insulating GaAs by laser deposition of In by Kazlauskienė, V., Kažukauskas, V., Miškinis, J., Petravičius, A., Pūras, R., Sakalauskas, S., Sinius, J., Vaitkus, J. -V., Žindulis, A.

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Waveguiding properties of CdS-doped SiO2-TiO2 films prepared by sol-gel method by JUODKAZIS, S, BERNSTEIN, E, PLENET, J. C, BOVIER, C, DUMAS, J, MUGNIER, J, VAITKUS, J. V

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The non-exponential and non-Auger-like time dependence of non-equilibrium free carrier concentration decay in a semiconductor with two deep levels at high injection rates by ZASINAS, E, VAITKUS, J. V

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Study of polycrystalline CdTe films by contact and contactless pulsed photo-ionization spectroscopy by Gaubas, E., Čeponis, T., Dobrovolskas, D., Mickevičius, J., Pavlov, J., Rumbauskas, V., Vaitkus, J.V., Alimov, N., Otajonov, S.

“…The methodology of sample preparing and combining of measurement techniques in comprehensive characterization of thin cadmium telluride (CdTe) heterostructures…”
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Instabilities in LEC GaAs Schottky barrier pixel detector imaging arrays by Vaitkus, J.V., Irsigler, R., Andersen, J., Smith, K.M.

“…We present room temperature measurements of inhomogeneities and instabilities in a GaAs pixel detector array at high bias voltage. The evolution of the…”
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Optical properties of CdS nanocrystallites embedded in (Si0.2Ti0.8)O2 sol-gel waveguide by JUODKAZIS, S, BERNSTEIN, E, PLENET, J. C, BOVIER, C, DUMAS, J, MUGNIER, J, VAITKUS, J. V

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Silicon detectors for the sLHC by Affolder, A., Allport, P.P., Bates, R., Beimforde, M., Betancourt, C., Borgia, A., Bortoletto, D., Bosma, M.J., Bowcock, T.J.V., Breindl, M., Brzozowski, A., Candelori, A., Cindro, V., Collins, P., Costinoaia, C.A., de Boer, W., Demina, R., Díez, S., Doherty, F., Dolenc Kittelmann, I., Dolezal, Z., Eremin, I., Fiori, F., Fretwurst, E., Bates, A.G., Genest, M.-H., Goessling, C., Golubev, A., Grillo, A.A., Grinstein, S., Härkönen, J., Hartmann, F., Hynds, D., Ilyashenko, I., Karpenko, A., Kharchuk, A., Kozubal, M., Kuznetsov, A., La Rosa, A., Lange, J., Lazanu, I., Lazanu, S., Lefeuvre, G., Litovchenko, P., Macchiolo, A., Mäenpää, T., Mandic, I., Marti i Garcia, S., Marunko, S., Masek, P., Matysek, M., Mikestikova, M., Mikuž, M., Minano, M., Monokhov, E., Mori, R., Naletko, A., Parkes, C., Passeri, D., Pawlowski, M., Petasecca, M., Piemonte, C., Pignatel, G.U., Piotrzkowski, K., Placekett, R., Pöhlsen, Th, Popule, J., Preiss, J., Raf, J.M., Rando, R., Richter, R., Roeder, R., Rohe, T., Rott, C., Rummler, A., Ruzin, A., Sadrozinski, H.F.W., Sakalauskas, S., Samadashvili, N., Shipsey, I., Sicho, P., Slavicek, T., Solar, M., Son, S., Sopko, V., Sopko, B., Spencer, N., Storasta, J., Tan, P., Tsiskaridze, S., Tsvetkov, A., Tuuva, T., Tylchin, M., Verbitskaya, E., Vila Alvarez, I., Walz, M., Wunstorf, R., Zelazko, J., Zhukov, V., Zorzi, N.

“…In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application…”
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Influence of irradiation by 24GeV protons on the properties of 4H-SiC radiation detectors by Kazukauskas, V, Jasiulionis, R, Kalendra, V, Vaitkus, J-V

“…We had investigated the effects of the irradiation by 24GeV protons with the doses from 1013cm-2 up to 1016cm-2 on the properties of radiation detectors…”
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Radiation-hard semiconductor detectors for SuperLHC by Bruzzi, M., Alfieri, G., Assouak, S., Avset, B.S., Baranova, E., Basile, A., Bisello, D., Bolla, G., Bosisio, L., V. Bowcock, T.J., Brukhanov, A., Buda, M., Buhmann, P., Campabadal, F., Campbell, D., Cavallini, A., Chren, D., Cindro, V., Collins, P., Coutinho, J., Cunningham, W., Dalla Betta, G.-F., Davies, G., Dawson, I., Dervan, P., Ferbel, T., Fizzotti, F., Fleta, C., Franchenko, S., Garcia, C., Garcia-Navarro, J.E., Glaser, M., González Sevilla, S., Grigoriev, E., Grillo, A., Groza, A., Haddad, L., Hauler, F., Horazdovsky, T., Horisberger, R., Hruban, A., Joram, C., Kalinina, E., Kaminski, P., Karpenko, A., Kazlauskiene, V., Klaiber-Lodewigs, J., Kodys, P., Krasel, O., Kuznetsov, A., Lastovetsky, V., Leroy, C., Lindstrom, L., Litovchenko, A., Litvinov, V., Lo Giudice, A., Luczynski, Z., Mainwood, A., Makarenko, L.F., Marunko, S., Mathieson, K., Menichelli, D., Miglio, S., Monakhov, E., Nava, F., Oshea, V., Parkes, C., Pein, U., Petasecca, M., Piatkowski, B., Pinho, N., Popa, A.I., Pucker, G., Rafí, J.M., Rohe, T., Ronchin, S., Rott, C., Roy, A., Ruzin, A., Ryazanov, A., Sadrozinski, H.F.W., Sakalauskas, S., Sciortino, S., Seiden, A., Sellin, P., Shipsey, I., Son, S., Strupinski, W., Surma, B., Svensson, B.G., Uebersee, H., Uher, J., Vaitkus, J.V., Vrba, V., Wilhelm, I., Worm, S., Wunstorf, R., Zaluzhny, A., Zen, M., Zorzi, N.

“…An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10 35 cm −2 s −1 has been envisaged to extend the physics reach of the…”
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