Search Results - "V. Yu. Yavid"

Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes by Koval’chuk, N. S., Lastovskii, S. B., Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Shestovsky, D. V., Yavid, V. Yu, Yankovskii, Yu. N.

“…The results of studies of electrophysical parameters of pin- silicon-based photodiodes, depending on their operating modes (external bias and temperature),…”
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Electrophysical Parameters of PIN Photodiodes Irradiated with 60Co γ-Quanta by Kovalchuk, N. S., Lastovskii, S. B., Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Shestovskii, D. V., Yavid, V. Yu, Yankovskii, Yu. N.

“…The results of studies of the changes in the electrophysical parameters of PIN photodiodes made on monocrystalline silicon wafers of the p -type of…”
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Effect of Process-Related Impurities on the Electrophysical Parameters of a MOS Transistor by Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Filipenya, V. A., Yavid, V. Yu, Yankovskii, Yu. N.

“…It is established that the electrophysical characteristics of MOS transistors largely depend on the quality of a gate dielectric. The presence of an extra…”
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QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS by V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, V. A. Filipenya, S. V. Shvedau, V. V. Chernyi, V. Yu. Yavid, Yu. N. Yankouski

“…There were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied…”
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Influence of radiation defects on diffusion of arsenic and antimony in implanted silicon by Jadan, M., Chelyadinskii, A. R., Yavid, V. Yu

“…Diffusion of implanted Sb and As in silicon layers with various contents of radiation defects is investigated during furnace thermal annealing and rapid…”
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Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions by Jadan, M., Chelyadinskii, A.R., Yavid, V.Yu

“…Accumulation and annealing of radiation defects in silicon and in the heavily phosphorus doped silicon layers implanted with Si + or P + ions have been studied…”
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