Search Results - "V. A. Yakovtseva"

Processes at Platinum Electrodes during the Cathode Polarization in Alcohol Erbium Nitrate Solution by Volchek, S. A., Yakovtseva, V. A.

“…The processes at platinum electrodes during the cathode polarization in an alcohol solution of erbium nitrate are discussed. The current density maxima on the…”
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Heteroepitaxy of PbS on porous silicon by LEVCHENKO, V. I, POSTNOVA, L. I, BONDARENKO, V. P, VOROZOV, N. N, YAKOVTSEVA, V. A, DOLGYI, L. N

“…Epitaxial PbS films were grown by molecular-beam epitaxy (MBE) on the surface of porous silicon (PS) formed on the silicon substrate of (111) orientation. The…”
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Birefringence of nanoporous alumina: dependence on structure parameters by Lutich, A.A., Danailov, M.B., Volchek, S., Yakovtseva, V.A., Sokol, V.A., Gaponenko, S.V.

“…We report on experimental and theoretical investigations of the birefringence of free-standing nanoporous anodic alumina membranes in the optical range. The…”
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Luminescence from porous silicon doped with erbium–ytterbium complexes by Filippov, V.V, Kuznetsova, V.V, Homenko, V.S, Pershukevich, P.P, Yakovtseva, V.A, Balucani, M, Bondarenko, V.P, Lamedica, G, Ferrari, F

“…The study of photoluminescence (PL) from porous silicon (PS) containing complexes of gadolinium oxychloride with Er 3+- and Er 3+–Yb 3+ is reported. The…”
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Total gamma dose characteristics of CMOS devices in SOI structures based on oxidized porous silicon by Bondarenko, V.P., Bogatirev, Y.V., Colinge, J.P., Dolgyi, L.N., Dorofeev, A.M., Yakovtseva, V.A.

“…The electrical characteristics of complementary metal-oxide-semiconductor (CMOS) transistors and ring oscillators fabricated in porous silicon…”
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HIGH-INTENSITY PULSED MAGNETIC FIELDS FOR THE MEDICAL TREATMENT OF SPORTS-RELATED ACCIDENTS by I. V. Sysoeva, V. A. Yakovtseva

“…The experimental determination and justification of optimal exposure parameters for the high-intensity pulsed magnetic field (HIPMF) has been made. The…”
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Electrochemical alumina technology for power electronics devices by D. L. Shimanovich, V. A. Yakovtseva

“…The electrochemical alumina technology (ELAT) for the formation of heat-conducting aluminum substrates with a dielectric layer of anodic aluminum oxide with…”
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ORIGIN AND GROWTH KINETICS OF DENSE ANODIC ALUMINA by V. A. Sokol, V. A. Yakovtseva, D. I. Chushkova

“…Grounds for the research presented and the technique for the recording of kinetic (polarization) dependencies of the initial (from -2 V) stage of the origin…”
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A model of radiative recombination in n -type porous silicon–aluminum Schottky junction by Balucani, M., Bondarenko, V., Franchina, L., Lamedica, G., Yakovtseva, V. A., Ferrari, A.

“…It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an…”
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Electrolyte hydrodynamics in anodic alumina pores by Sokol, V. A., Yakovtseva, V. A.

“…The electrolyte movement mechanism in the pores of porous anodic alumina under the electric field action during the oxide formation is discussed. A qualitative…”
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Erbium-doped oxidized porous silicon for integrated optical waveguides by Bondarenko, V. P., Yakovtseva, V. A., Dolgii, L. N., Vorozov, N. N., Kazyuchits, N. M., Tsybeskov, L., Foucher, F.

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Birefringence of nanoporous alumina : dependence on structure parameters: Optics on the nanoscale: principles, instrumentation and applications by LUTICH, A. A, DANAILOV, M. B, VOLCHEK, S, YAKOVTSEVA, V. A, SOKOL, V. A, GAPONENKO, S. V

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Single-electron transistor based on porous anodic alumina by Sokol, V. A., Yakovtseva, V. A.

“…The self-organized nano-sized porous anodic alumina films filled with metal are discussed for multiple-island single-electron transistors operated at room…”
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Application prospects for aluminum bases in gigahertz devices by Sokol, V. A., Yakovtseva, V. A., Parkun, V. M.

“…Based on analysis of the microstrip line parameters, arguments for aluminum bases with a dielectric layer of anodic aluminum oxide for gigahertz devices are…”
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Porous silicon based heterostructures: formation, properties, and application by Bondarenko, V.P., Bondarenko, A.V., Dolgyi, L.N., Dorofeev, A.M., Kazuchits, N.M., Levchenko, V.I., Vorozov, N.N., Volchek, S.A., Troyanova, G.N., Yakovtseva, V.A.

“…The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation…”
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