Search Results - "V. A. Filipenya"

Effect of Process-Related Impurities on the Electrophysical Parameters of a MOS Transistor by Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Filipenya, V. A., Yavid, V. Yu, Yankovskii, Yu. N.

“…It is established that the electrophysical characteristics of MOS transistors largely depend on the quality of a gate dielectric. The presence of an extra…”
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Effect of surface potential of anodic alumina film on their charge properties by Le Dinh Vi, O. V. Kupreeva, V. V. Dudich, V. A. Filipenya, S. K. Lazarouk

“…The surface potential of anodic alumina films and their charge properties have been studied. The surface potential of anodic alumina films after anodic process…”
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CONDENSER STRUCTURES BASED ON BARIUM TITANATE FILMS FORMED BY SOL-GEL METHOD by P. A. Kholov, N. V. Gaponenko, K. V. Shaidakova, V. I. Krymski, V. A. Filipenya, T. V. Petlitskaya, V. V. Kolos, A N. Pyatlitski

“…The objective of the work is investigation the dielectric permittivity and dielectric loss tangent of BaTiO3 films in a capacitor structure formed by sol – gel…”
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Reliability Express Control of the Gate Dielectric of Semiconductor Devices by V. A. Solodukha, G. G. Chigir, V. A. Pilipenko, V. A. Filipenya, V. A. Gorushko

“…The key element determining stability of the semiconductor devices is a gate dielectric. As its thickness reduces in the process of scaling the combined volume…”
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CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS by V. А. Pilipenko, V. A. Saladukha, V. A. Filipenya, R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. V. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky

“…Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis…”
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QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS by V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, V. A. Filipenya, S. V. Shvedau, V. V. Chernyi, V. Yu. Yavid, Yu. N. Yankouski

“…There were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied…”
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Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes by Poklonski, N.A., Gorbachuk, N.I., Nha, VoQuang, Shpakovski, S.V., Filipenya, V.A., Skuratov, V.A., Kołtunowicz, T.N., Kukharchyk, N., Becker, H.-W., Wieck, A.

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