Search Results - "V, Gudina S"

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  1. 1

    Quantum Oscillations of Magnetoresistance in HgCdTe/HgTe/HgCdTe Heterostructures with Inverted Band Spectrum by Bogoliubskii, A. S., Gudina, S. V., Neverov, V. N., Turutkin, K. V., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.

    Published in Physics of the solid state (01-03-2022)
    “…The effects observed in the Shubnikov–de Haas oscillation regime in the HgCdTe/HgTe/HgCdTe heterostructure with a wide (20.3 nm) HgTe quantum well with an…”
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    Journal Article
  2. 2

    “Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase by Gudina, S. V., Bogolyubskii, A. S., Neverov, V. N., Shelushinina, N. G., Yakunin, M. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2018)
    “…The effective mass and spectrum of Landau levels are calculated for the valence band of a HgTe/HgCdTe quantum well with an inverted band structure in the…”
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    Journal Article
  3. 3
  4. 4

    Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure by Gudina, S. V., Neverov, V. N., Turutkin, K. V., Vasil’evskii, I. S., Vinichenko, A. N.

    Published in Physics of metals and metallography (01-02-2024)
    “…The paper presents experimental results of the appearance of a voltage at the potential contacts in the absence of an external current through a sample in the…”
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  5. 5

    Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations by Neverov, V. N., Bogolubskii, A. S., Gudina, S. V., Podgornykh, S. M., Turutkin, K. V., Popov, M. R., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.

    Published in Semiconductors (Woodbury, N.Y.) (01-08-2020)
    “…We present a study of Shubnikov–de Haas (SdH) oscillations at temperatures of (2.2–10) K in magnetic fields up to 2.5 T in the HgCdTe/HgTe/HgCdTe…”
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    Journal Article
  6. 6

    Determination of the magnetocaloric effect from thermophysical parameters and their relationships near magnetic phase transition in doped manganites by Gamzatov, A.G., Batdalov, A.B., Aliev, A.M., Yen, P.D.H., Gudina, S.V., Neverov, V.N., Thanh, T.D., Dung, N.T., Yu, S.-C., Kim, D.-H., Phan, M.H.

    “…•Direct and indirect measurements magnetocaloric effect in Pr0.7Sr0.2Ca0.1MnO3.•Specific heat, thermal diffusivity, thermal conductivity, resistivity…”
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  7. 7

    Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures by Gudina, S. V., Arapov, Yu. G., Ilchenko, E. I., Neverov, V. N., Savelyev, A. P., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)
    “…The longitudinal ρ xx and Hall ρ xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic…”
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  8. 8

    Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure by Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Dvoretsky, S. A., Mikhailov, N. N.

    Published in Journal of low temperature physics (01-12-2016)
    “…We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures T = ( 2.9 ÷ 50 )  K for the…”
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    Journal Article
  9. 9

    Electron Effective Mass and g Factor in Wide HgTe Quantum Wells by Gudina, S. V., Neverov, V. N., Ilchenko, E. V., Bogolubskii, A. S., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.

    Published in Semiconductors (Woodbury, N.Y.) (01-01-2018)
    “…The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system…”
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    Journal Article
  10. 10

    The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination by Arapov, Yu. G., Gudina, S. V., Klepikova, A. S., Neverov, V. N., Harus, G. I., Shelushinina, N. G., Yakunin, M. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2017)
    “…The dependences of the longitudinal and Hall resistances on a magnetic field in n -InGaAs/GaAs heterostructures with a single and double quantum wells after…”
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    Journal Article
  11. 11

    Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs by Gudina, S V, Arapov, Yu G, Saveliev, A P, Neverov, V N, Podgornykh, S M, Shelushinina, N G, Yakunin, M V, I. S. Vasil’evskii, Vinichenko, A N

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2016)
    “…The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T =…”
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    Journal Article
  12. 12

    Czochralski silicon characterization by using thermoelectric power measurements at high pressure by Shchennikov, V.V., Gudina, S.V., Misiuk, A., Shamin, S.N.

    Published in Physica. B, Condensed matter (31-12-2003)
    “…The thermoelectric power of Czochralski silicon with various interstitial oxygen contents has been investigated at high pressure up to 16GPa by using automated…”
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  13. 13

    Evolution of the energy structure of n-InGaAs/GaAs double quantum wells in tilted magnetic fields by Savelyev, A. P., Yakunin, M. V., Podgornykh, S. M., Gudina, S. V.

    “…Complex variations of a magnetoresistance oscillation pattern with a tilted magnetic field angle are found in a n -In 0.2 Ga 0.8 As/GaAs double quantum well…”
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  14. 14

    Temperature dependence of the electron quantum lifetime in InGaAs/GaAs double quantum well: Fukuyama-Abrahams mechanism by Gudina, S.V., Arapov, Yu.G., Neverov, V.N., Savelyev, A.P., Sandakov, N.S., Shelushinina, N.G., Yakunin, M.V.

    “…In the n-InGaAs/GaAs double quantum well, the suppression of resonant resistance by an in-plane magnetic field B ≤ 9 T in the temperature range T = (1.8–70) K…”
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  15. 15

    Determination of the magnetocaloric effect from thermophysical parameters and their relationships near magnetic phase transition in doped manganites by Gamzatov, A. G, Batdalov, A. B, Aliev, A. M, Yen, P. D. H, Gudina, S. V, Neverov, V. N, Thanh, T. D, Dung, N. T, Yu, S. -C, Kim, D-H, Phan, M. H

    Published 10-05-2020
    “…We present the results of a comparative analysis of the magnetocaloric effect (MCE) in Pr0.7Sr0.2Ca0.1MnO3, through direct and indirect measurements, using…”
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    Journal Article
  16. 16

    Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime by Gudina, S. V, Arapov, Yu. G, Neverov, V. N, Savelyev, A. P, Podgonykh, S. M, Shelushinina, N. G, Yakunin, M. V

    Published 27-08-2018
    “…We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a…”
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  17. 17

    Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells by Gudina, S.V., Arapov, Yu.G., Neverov, V.N., Savelyev, A.P., Podgornykh, S.M., Shelushinina, N.G., Yakunin, M.V.

    “…We report on experimental study of quantum conductivity corrections for two-dimensional electron gas in GaAs/InGaAs/GaAs single and double quantum wells in a…”
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    Journal Article
  18. 18

    Effective Mass and g-Factor of Two-Dimentional HgTe [GAMMA].sub.8-Band Electrons: Shubnikov-de Haas Oscillations by Neverov, V. N, Bogolubskii, A. S, Gudina, S. V, Podgornykh, S. M, Turutkin, K. V, Popov, M. R, Shelushinina, N. G

    Published in Semiconductors (Woodbury, N.Y.) (01-08-2020)
    “…We present a study of Shubnikov-de Haas (SdH) oscillations at temperatures of (2.2-10) K in magnetic fields up to 2.5 T in the HgCdTe/HgTe/HgCdTe…”
    Get full text
    Journal Article
  19. 19

    Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum by Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2015)
    “…The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are…”
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    Journal Article
  20. 20

    Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures by Gudina, S. V., Arapov, Yu. G., Saveliev, A. P., Neverov, V. N., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2016)
    “…The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n -InGaAs/InAlAs heterostructures at temperatures of T =…”
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    Journal Article