Search Results - "Utlaut, W."

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  1. 1

    Performance of the focused-ion-striped transistor (FIST)-A new MESFET structure produced by focused-ion-beam implantation by Rensch, D.B., Matthews, D.S., Utlaut, M.W., Courtney, M.D., Clark, W.M.

    Published in IEEE transactions on electron devices (01-11-1987)
    “…We report the fabrication and performance of the focused-ion-striped transistor (FIST), which is a GaAs MESFET structure having a channel with stripes of high…”
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    Journal Article
  2. 2

    GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating by Wu, M. C., Boenke, M. M., Wang, S., Clark, W. M., Jr, Stevens, E. H.

    Published in Applied physics letters (25-07-1988)
    “…The performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR) is reported for the first time…”
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  3. 3

    DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants by Boenke, M.M., Wu, M.C., Wang, S., Clark, W.M., Stevens, E.H., Utlaut, M.W.

    Published in IEEE journal of quantum electronics (01-06-1989)
    “…A static plasma grating has been demonstrated experimentally (see M.C. Wu et al., Appl. Phys. Lett., vol.53, no.4, p.265-7, 1988) in a large-optical-cavity…”
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  4. 4

    Transverse thermal velocity broadening of focused beams from liquid metal ion sources by Ward, J. W., Kubena, R. L., Utlaut, M. W.

    “…Experiments have shown that the target current density in focused ion beam columns have long ‘‘tails’’ outside the central submicron region. We show that these…”
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  5. 5

    Computer simulation of current density profiles in focused ion beams by Ward, J. W., Utlaut, M. W., Kubena, R. L.

    “…We have made a computer simulation of the target current density in our single‐lens focused ion beam column. This column images at unity magnification the…”
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  6. 6

    Long‐lifetime, reliable liquid metal ion sources for boron, arsenic, and phosphorus by Clark, W. M., Seliger, R. L., Utlaut, M. W., Bell, A. E., Swanson, L. W., Schwind, G. A., Jergenson, J. B.

    “…Operation of liquid–metal ion sources based on palladium alloys that contain boron, arsenic, and phosphorus (singly or in combination) was studied. These…”
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    Spread spectrum: Principles and possible application to spectrum utilization and allocation by Utlaut, W.

    Published in IEEE Communications Society magazine (01-09-1978)
    “…Because of the continuing demand for more telecommunication capacity, to serve the world's need for commerce and public safety, there is a continuing need for…”
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  13. 13

    Modifying the Ionosphere with Intense Radio Waves by Utlaut, William F., Cohen, Robert

    “…The ionospheric modification experiments provide an opportunity to better understand the aeronomy of the natural ionosphere and also afford the control of a…”
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    Ionospheric modification induced by high-power HF transmitters-A potential for extended range VHF-UHF communications and plasma physics research by Utlaut, W.F.

    Published in Proceedings of the IEEE (01-01-1975)
    “…When the ionized upper atmosphere of the earth is illuminated by high-power HF radio waves at appropriate frequencies, the temperature of electrons in the…”
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    High‐gain lateral p n p bipolar transistors made using focused ion beam implantation by Clark, William M., Utlaut, Mark W., Reuss, Robert H., Koury, Dan

    “…We report the fabrication of lateral p n p bipolar transistors using focused ion beam (FIB) implants of boron and phosphorus for the collector and base,…”
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