Search Results - "Utlaut, W."
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Performance of the focused-ion-striped transistor (FIST)-A new MESFET structure produced by focused-ion-beam implantation
Published in IEEE transactions on electron devices (01-11-1987)“…We report the fabrication and performance of the focused-ion-striped transistor (FIST), which is a GaAs MESFET structure having a channel with stripes of high…”
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GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating
Published in Applied physics letters (25-07-1988)“…The performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR) is reported for the first time…”
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DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants
Published in IEEE journal of quantum electronics (01-06-1989)“…A static plasma grating has been demonstrated experimentally (see M.C. Wu et al., Appl. Phys. Lett., vol.53, no.4, p.265-7, 1988) in a large-optical-cavity…”
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Transverse thermal velocity broadening of focused beams from liquid metal ion sources
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-11-1988)“…Experiments have shown that the target current density in focused ion beam columns have long ‘‘tails’’ outside the central submicron region. We show that these…”
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Computer simulation of current density profiles in focused ion beams
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-01-1987)“…We have made a computer simulation of the target current density in our single‐lens focused ion beam column. This column images at unity magnification the…”
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Long‐lifetime, reliable liquid metal ion sources for boron, arsenic, and phosphorus
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-01-1987)“…Operation of liquid–metal ion sources based on palladium alloys that contain boron, arsenic, and phosphorus (singly or in combination) was studied. These…”
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Evidence on the Laminar Nature of the Exosphere Obtained by Means of Guided High-Frequency Wave Propagation
Published in Physical review letters (01-01-1961)Get full text
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VA-5 the focused ion stripe transistor (FIST), a new MESFET structure produced by focused ion-beam implantation
Published in IEEE transactions on electron devices (01-11-1987)Get full text
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Guest editorial
Published in IEEE transactions on communications (01-01-1975)Get full text
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Guest editorial
Published in IEEE transactions on communications (01-01-1975)Get full text
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Spread spectrum: Principles and possible application to spectrum utilization and allocation
Published in IEEE Communications Society magazine (01-09-1978)“…Because of the continuing demand for more telecommunication capacity, to serve the world's need for commerce and public safety, there is a continuing need for…”
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Modifying the Ionosphere with Intense Radio Waves
Published in Science (American Association for the Advancement of Science) (15-10-1971)“…The ionospheric modification experiments provide an opportunity to better understand the aeronomy of the natural ionosphere and also afford the control of a…”
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Spectrum Management and the 1979 World Administrative Radio Conference
Published in IEEE transactions on communications (01-08-1981)Get full text
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Ionospheric modification induced by high-power HF transmitters-A potential for extended range VHF-UHF communications and plasma physics research
Published in Proceedings of the IEEE (01-01-1975)“…When the ionized upper atmosphere of the earth is illuminated by high-power HF radio waves at appropriate frequencies, the temperature of electrons in the…”
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Spectrum Management and the 1979 World Administrative Radio Conference
Published in IEEE transactions on electromagnetic compatibility (01-01-1981)Get full text
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High‐gain lateral p n p bipolar transistors made using focused ion beam implantation
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-05-1988)“…We report the fabrication of lateral p n p bipolar transistors using focused ion beam (FIB) implants of boron and phosphorus for the collector and base,…”
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