Search Results - "Usmonov, Sh.N"

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x0≤x≤1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111) by Saidov, A. S., Saparov, D. V., Usmonov, Sh.N., Kutlimratov, A., Abdiev, J.M., Kalanov, M., Razzakov, A.Sh, Akhmedov, A.M.

“…Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase…”
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Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x 0 ≤ x ≤ 1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111) by Saidov, A. S., Saparov, D. V., Usmonov, Sh.N., Kutlimratov, A., Abdiev, J.M., Kalanov, M., Razzakov, A.Sh, Akhmedov, A.M.

“…Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase…”
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Growth of [Ge.sub.1-x][Sn.sub.x] solid solution films and study of their structural properties and some of their photoelectric properties by Saidov, A.S, Usmonov, Sh.N, Asatova, U.P

“…From the charge state and closeness of the covalent radii of molecules of the solution-forming components, the possibility of the formation of the solutions…”
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Growth, structure, and properties of GaAs-based [.sub.y] epitaxial films by Zaynabidinov, S.Z, Saidov, A.S, Leiderman, A.Yu, Kalanov, M.U, Usmonov, Sh.N, Rustamova, V.M, Boboev, A.Y

“…The possibility of growing the [(GaAs).sub.1-x-y][([Ge.sub.2]).sub.x][(ZnSe).sub.y] alloy on GaAs substrates by the method of liquid-phase epitaxy from a tin…”
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Growth of [.sub.x] solid solution films and investigation of their structural and some photoelectric properties by Saidov, A.S, Saidov, M.S, Usmonov, Sh.N, Leiderman, A.Yu, Kalanov, M.U, Gaimnazarov, K.G, Kurmantaev, A.N

“…Single-crystal films of the substitutional solid solution [(GaAs).sub.1- x][(ZnSe).sub.x](0 ≤ x ≤ 0.80) on GaAs substrates have been grown using liquid phase…”
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