Search Results - "Usikova, A.A"

Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs by Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A., Usikova, A.A.

“…Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode- photodiode pairs is investigated for the first time at 300 K. It is shown that…”
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InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths by Il'inskaya, N.D, Karandashev, S.A, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A

“…Research data for photovoltaic, I-V and C-V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength…”
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P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction by Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

“…•Linear impurity distribution near the p-n junction.•Low unit area capacity (Co/A)77 K = 4.3 × 10−8 F × cm−2).•D4.7μm,300K∗ as high as 6.5 × 108 Jones…”
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Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–237] by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…Double heterostructure back-side illuminated photodiodes with a 10-μm thick InAs0.9Sb0.1 active layer have been fabricated, studied and characterized in the…”
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InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure by Il'inskaya, N.D, Karandashev, S.A, Karpukhina, N.G, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A

“…The results of studies of the current-voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 x 64 linear array…”
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Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers by Babichev, A. V., Kurochkin, A. S., Kolodeznyi, E. C., Filimonov, A. V., Usikova, A. A., Nevedomsky, V. N., Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I., Egorov, A. Yu

“…The results of development of the basic structure and technological conditions of growing heterostructures for single- and dual-frequency quantum-cascade…”
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P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…•BLIP regime starting from 190K at 3μm.•Capacitance as small as 1.3×10−7Fcm−2, 80K.•Good uniformity of diode parameters in 8×8 PD matrix…”
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Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures by Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.

“…The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs…”
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Effect of postgrowth techniques on the characteristics of triple-junction inGaP/GaAs/Ge solar cells by Andreev, V.M, Grebenshchikova, E.A, Dmitriev, P.A, Ilinskaya, N.D, Kalinovsky, V.S, Kontrosh, E.V, Malevskaya, A.V, Usikova, A.A

“…The photoelectric characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells are studied in relation to the method used to form the photocell chip. It is…”
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Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes by Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

“…•Lowest capacitance of InAs heterojunction PD.•Fast response.•High detectivity in the 3μm range.•BLIP operation at 150K at 3μm.•Flip-chip design…”
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Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands by Evropeytsev, E. A., Semenov, A. N., Nechaev, D. V., Jmerik, V. N., Kaibyshev, V. Kh, Troshkov, S. I., Brunkov, P. N., Usikova, A. A., Ivanov, S. V., Toropov, A. A.

“…We report on fabrication and studies of composite heterostuctures consisting of an Al 0.55 Ga 0.45 N/A l0.8 Ga 0.2 N quantum well and surface Al nanoislands,…”
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Investigation of the Modified Structure of a Quantum Cascade Laser by Mamutin, V. V., Maleev, N. A., Vasilyev, A. P., Ilyinskaya, N. D., Zadiranov, Yu. M., Usikova, A. A., Yagovkina, M. A., Shernyakov, Yu. M., Ustinov, V. M.

“…The process of obtaining a modified structure for quantum cascade lasers is studied; this process includes growth using molecular-beam epitaxy, plasma etching,…”
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Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites by Belyaev, K. G., Usikova, A. A., Jmerik, V. N., Kop’ev, P. S., Ivanov, S. V., Toropov, A. A., Brunkov, P. N.

“…A significant (by up to a factor of 7) increase in the internal quantum efficiency of luminescence is achieved at room temperature in…”
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Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect by Gadzhiyev, I. M., Buyalo, M. S., Gubenko, A. E., Egorov, A. Yu, Usikova, A. A., Il’inskaya, N. D., Lyutetskiy, A. V., Zadiranov, Yu. M., Portnoi, E. L.

“…The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias…”
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On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm by Novikov, I. I., Karachinsky, L. Ya, Kolodeznyi, E. S., Bougrov, V. E., Kurochkin, A. S., Gladyshev, A. G., Babichev, A. V., Gadzhiev, I. M., Buyalo, M. S., Zadiranov, Yu. M., Usikova, A. A., Shernyakov, Yu. M., Savelyev, A. V., Nyapshaev, I. A., Egorov, A. Yu

“…The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the…”
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Micro-Photoluminescence Studies of CdSe/ZnSe Quantum Dot Structures Grown under Different Conditions by Rakhlin, M.V., Sorokin, S.V., Sedova, I.V., Usikova, A.A., Gronin, S.V., Belyaev, K.G., Ivanov, S.V., Toropov, A.A.

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Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes by Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

“…•We tested for the first time InAs double heterostructure photodiodes at low temperatures.•InAs DH photodiodes exhibited superior performance compared to any…”
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Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices by Kagan, M. S., Altukhov, I. V., Baranov, A. N., Il’inskaya, N. D., Paprotskiy, S. K., Teissier, R., Usikova, A. A.

“…Vertical transport in short-period InAs/AlSb superlattices with type-II heterojunctions is studied at room temperature. It is found that negative differential…”
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