Search Results - "Usachov, D."

Cubic Rashba Effect in the Surface Spin Structure of Rare-Earth Ternary Materials by Usachov, D. Yu, Nechaev, I. A., Poelchen, G., Güttler, M., Krasovskii, E. E., Schulz, S., Generalov, A., Kliemt, K., Kraiker, A., Krellner, C., Kummer, K., Danzenbächer, S., Laubschat, C., Weber, A. P., Sánchez-Barriga, J., Chulkov, E. V., Santander-Syro, A. F., Imai, T., Miyamoto, K., Okuda, T., Vyalikh, D. V.

“…Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile…”
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Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties by Usachov, D, Vilkov, O, Grüneis, A, Haberer, D, Fedorov, A, Adamchuk, V. K, Preobrajenski, A. B, Dudin, P, Barinov, A, Oehzelt, M, Laubschat, C, Vyalikh, D. V

“…A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has…”
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Observation of a universal donor-dependent vibrational mode in graphene by Fedorov, A. V., Verbitskiy, N. I., Haberer, D., Struzzi, C., Petaccia, L., Usachov, D., Vilkov, O. Y., Vyalikh, D. V., Fink, J., Knupfer, M., Büchner, B., Grüneis, A.

“…Electron–phonon coupling and the emergence of superconductivity in intercalated graphite have been studied extensively. Yet, phonon-mediated superconductivity…”
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Long-lived spin waves in a metallic antiferromagnet by Poelchen, G., Hellwig, J., Peters, M., Usachov, D. Yu, Kliemt, K., Laubschat, C., Echenique, P. M., Chulkov, E. V., Krellner, C., Parkin, S. S. P., Vyalikh, D. V., Ernst, A., Kummer, K.

“…Collective spin excitations in magnetically ordered crystals, called magnons or spin waves, can serve as carriers in novel spintronic devices with ultralow…”
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Adsorption of Molecular Oxygen on N-graphene by Bokai, K. A., Vilkov, O. Yu, Usachov, D. Yu

“…The adsorption and dissociation of molecular oxygen on the surface of N-graphene/Au/Ni(111) epitaxial system with high crystalline quality of N-graphene have…”
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Insight into the Temperature-Dependent Canting of 4f Magnetic Moments from 4f Photoemission by Usachov, D. Yu, Tarasov, A. V., Glazkova, D., Mende, M., Schulz, S., Poelchen, G., Fedorov, A. V., Vilkov, O. Yu, Bokai, K. A., Stolyarov, V. S., Kliemt, K., Krellner, C., Vyalikh, D. V.

“…The orientation of the 4f moments offers an additional degree of freedom for engineering the spin-related properties in spintronic nanostructures of…”
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Atomically precise semiconductor—graphene and hBN interfaces by Ge intercalation by Verbitskiy, N. I., Fedorov, A. V., Profeta, G., Stroppa, A., Petaccia, L., Senkovskiy, B., Nefedov, A., Wöll, C., Usachov, D. Yu, Vyalikh, D. V., Yashina, L. V., Eliseev, A. A., Pichler, T., Grüneis, A.

“…The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world…”
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Insight into the Temperature Evolution of Electronic Structure and Mechanism of Exchange Interaction in EuS by Fedorov, A. V, Poelchen, G, Eremeev, S. V, Schulz, S, Generalov, A, Polley, C, Laubschat, C, Kliemt, K, Kaya, N, Krellner, C, Chulkov, E. V, Kummer, K, Usachov, D. Yu, Ernst, A, Vyalikh, D. V

“…Discovered in 1962, the divalent ferromagnetic semiconductor EuS (T C = 16.5 K, E g = 1.65 eV) has remained constantly relevant to the engineering of novel…”
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Large spin splitting of metallic surface-state bands at adsorbate-modified gold/silicon surfaces by Bondarenko, L. V., Gruznev, D. V., Yakovlev, A. A., Tupchaya, A. Y., Usachov, D., Vilkov, O., Fedorov, A., Vyalikh, D. V., Eremeev, S. V., Chulkov, E. V., Zotov, A. V., Saranin, A. A.

“…Finding appropriate systems with a large spin splitting of metallic surface-state band which can be fabricated on silicon using routine technique is an…”
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Efficient gating of epitaxial boron nitride monolayers by substrate functionalization by Fedorov, A., Praveen, C. S., Verbitskiy, N. I., Haberer, D., Usachov, D., Vyalikh, D. V., Nefedov, A., Wöll, C., Petaccia, L., Piccinin, S., Sachdev, H., Knupfer, M., Büchner, B., Fabris, S., Grüneis, A.

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Origin of spin-orbit splitting for monolayers of au and ag on w(110) and mo(110) by Shikin, A M, Varykhalov, A, Prudnikova, G V, Usachov, D, Adamchuk, V K, Yamada, Y, Riley, J D, Rader, O

“…Spin-orbit coupling can give rise to spin-split electronic states without a ferromagnet or an external magnetic field. We create large spin-orbit splittings in…”
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Controlled assembly of graphene-capped nickel, cobalt and iron silicides by Vilkov, O., Fedorov, A., Usachov, D., Yashina, L. V., Generalov, A. V., Borygina, K., Verbitskiy, N. I., Grüneis, A., Vyalikh, D. V.

“…The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace…”
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Insight into the electronic structure of the centrosymmetric skyrmion magnet GdRu2Si2 by Eremeev, S V, Glazkova, D, Poelchen, G, Kraiker, A, Ali, K, Tarasov, A V, Schulz, S, Kliemt, K, Chulkov, E V, Stolyarov, V S, Ernst, A, Krellner, C, Usachov, D Yu, Vyalikh, D V

“…The discovery of a square magnetic-skyrmion lattice in GdRu2Si2, with the smallest so far found skyrmion size and without a geometrically frustrated lattice,…”
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Spectroscopic characterization of N = 9 armchair graphene nanoribbons by Senkovskiy, B. V., Haberer, D., Usachov, D. Yu, Fedorov, A. V., Ehlen, N., Hell, M., Petaccia, L., Di Santo, G., Durr, R. A., Fischer, F. R., Grüneis, A.

“…We investigate the N = 9 atoms wide armchair‐type graphene nanoribbons (9‐AGNRs) by performing a comprehensive spectroscopic and microscopic characterization…”
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Electronic properties of hydrogenated quasi-free-standing graphene by Haberer, D., Petaccia, L., Wang, Y., Quian, H., Farjam, M., Jafari, S. A., Sachdev, H., Federov, A. V., Usachov, D., Vyalikh, D. V., Liu, X., Vilkov, O., Adamchuk, V. K., Irle, S., Knupfer, M., Büchner, B., Grüneis, A.

“…Tailoring the electronic properties of graphene is of fundamental interest regarding its application in electronic devices. One of the key strategies is…”
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Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) by Davydov, V. Yu, Usachov, D. Yu, Lebedev, S. P., Smirnov, A. N., Levitskii, V. S., Eliseyev, I. A., Alekseev, P. A., Dunaevskiy, M. S., Vilkov, O. Yu, Rybkin, A. G., Lebedev, A. A.

“…The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6 H -SiC…”
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Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC by Eliseyev, I. A., Davydov, V. Yu, Smirnov, A. N., Nestoklon, M. O., Dementev, P. A., Lebedev, S. P., Lebedev, A. A., Zubov, A. V., Mathew, S., Pezoldt, J., Bokai, K. A., Usachov, D. Yu

“…Systematic studies of the effect of the electron concentration on the Raman spectra of single-layer graphene films have been carried out. The samples were…”
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Regional anesthesia for carotid endarterectomy decreases incidence of shunt placement: 7AP4–6 by Shmigelskiy, A, Lubnin, A, Lukshin, V, Usachov, D

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High Quality Graphene Grown by Sublimation on 4H-SiC (0001) by Lebedev, A. A., Davydov, V. Yu, Usachov, D. Yu, Lebedev, S. P., Smirnov, A. N., Eliseyev, I. A., Dunaevskiy, M. S., Gushchina, E. V., Bokai, K. A., Pezoldt, J.

“…The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4 H -SiC substrate…”
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Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis by Usachov, D., Adamchuk, V. K., Haberer, D., Grüneis, A., Sachdev, H., Preobrajenski, A. B., Laubschat, C., Vyalikh, D. V.

“…We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110)…”
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