Search Results - "Uruma, Takeshi"

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  1. 1

    Imaging of an Electret Film Fabricated on a Micro-Machined Energy Harvester by a Kelvin Probe Force Microscope by Nakazawa, Kenta, Fukazawa, Kengo, Uruma, Takeshi, Hashiguchi, Gen, Iwata, Futoshi

    “…An imaging method for a highly charged material using a Kelvin probe force microscope (KFM) was developed. Energy harvesters generate electric energy from the…”
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    Journal Article
  2. 2

    Investigation of an n− layer in a silicon fast recovery diode under applied bias voltages using Kelvin probe force microscopy by Uruma, Takeshi, Satoh, Nobuo, Yamamoto, Hidekazu, Iwata, Futoshi

    Published in Japanese Journal of Applied Physics (01-08-2018)
    “…We have imaged an n− layer of a commercial silicon fast recovery diode (Si-FRD) under applied bias voltages using frequency modulation atomic force microscopy…”
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    Journal Article
  3. 3

    Development of atomic force microscopy combined with scanning electron microscopy for investigating electronic devices by Uruma, Takeshi, Tsunemitsu, Chiaki, Terao, Katsuki, Nakazawa, Kenta, Satoh, Nobuo, Yamamoto, Hidekazu, Iwata, Futoshi

    Published in AIP advances (01-11-2019)
    “…Atomic force microscopy (AFM) was combined with scanning electron microscopy (SEM) to investigate electronic devices. In general, under observation using an…”
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    Journal Article
  4. 4

    Nanoscale observation of organic thin film by atomic force microscopy by Mochizuki, Shota, Uruma, Takeshi, Satoh, Nobuo, Saravanan, Shanmugam, Soga, Tetsuo

    Published in Japanese Journal of Applied Physics (01-08-2017)
    “…Organic photovoltaics (OPVs) fabricated using organic semiconductors and hybrid solar cells (HSCs) based on organic semiconductors/quantum dots (QDs) have been…”
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    Journal Article
  5. 5

    Evaluation of carrier concentration reduction in GaN-on-GaN wafers by Raman spectroscopy and Kelvin force microscopy by Yamamoto, Hidekazu, Agui, Kazuya, Uchida, Yuhki, Mochizuki, Shota, Uruma, Takeshi, Satoh, Nobuo, Hashizume, Tamotsu

    Published in Japanese Journal of Applied Physics (01-08-2017)
    “…The carrier concentration in a gallium nitride (GaN) substrate of a GaN-on-GaN wafer grown by hydride vapor phase epitaxy (HVPE) was evaluated by Raman…”
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    Journal Article
  6. 6

    Investigation of the depletion layer by scanning capacitance force microscopy with Kelvin probe force microscopy by Uruma, Takeshi, Satoh, Nobuo, Yamamoto, Hidekazu

    Published in Japanese Journal of Applied Physics (01-08-2016)
    “…We have developed a scanning probe microscope (SPM) that combines atomic force microscopy (AFM) with both Kelvin probe force microscopy (KFM - to measure the…”
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    Journal Article
  7. 7

    Observation of silicon carbide Schottky barrier diode under applied reverse bias using atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy by Uruma, Takeshi, Satoh, Nobuo, Yamamoto, Hidekazu

    Published in Japanese Journal of Applied Physics (01-08-2017)
    “…We have observed a commercial silicon-carbide Schottky barrier diode (SiC-SBD) using our novel analysis system, in which atomic force microscopy (AFM) is…”
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    Journal Article
  8. 8

    Surface Potential Measurement of a Silicon Fast Recovery Diode under Applied Bias Voltages by Kelvin Probe Force Microscopy by Uruma, Takeshi, Satoh, Nobuo, Yamamoto, Hidekazu, Iwata, Futoshi

    “…We have measured a semiconductor region of a commercial silicon fast recovery diode (Si-FRD) under applied bias voltages by frequency modulation atomic force…”
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    Conference Proceeding
  9. 9

    Investigation on the surface potential and the depletion layer of Si-Schottky barrier diode - Evaluation by numerical calculation by Komori, Kyohei, Oda, Akinori, Uruma, Takeshi, Satoh, Nobuo, Yamamoto, Hidekazu

    “…Spatiotemporal variations of carrier density and potential in silicon-Schottky barrier diode (Si-SBD) have been simulated using a self-consistent spatially…”
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    Conference Proceeding
  10. 10

    Investigation of the surface potential and the depletion layer of Silicon-Schottky barrier diode - Evaluation by scanning probe microscopy by Uruma, Takeshi, Satoh, Nobuo, Komori, Kyouhei, Oda, Akinori, Yamamoto, Hidekazu

    “…We have developed a scanning-probe microscope (SPM) that combines atomic-force microscopy (AFM) with both Kelvin-probe force microscopy (KFM - to measure the…”
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    Conference Proceeding