Search Results - "Upton, M.A.G."
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Analysis and Characterization of Some Common Transitions and Interconnections using Three-Dimensional Modelling Techniques
Published in 1984 14th European Microwave Conference (01-09-1984)“…This paper will present the analysis and characterization of several different transitions and interconnections which are in common use, but have not to date…”
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Conference Proceeding -
2
HEMT Low-Noise Amplifier for Ka-Band
Published in 1987 IEEE MTT-S International Microwave Symposium Digest (1987)“…Using 0.25 micron gate-length High Electron Mobility Transistors (HEMTs), a two-stage amplifier has been developed that demonstrates the potential for…”
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Conference Proceeding -
3
The Design and Performance of a Double Balanced Mixer Using FETs
Published in 1985 IEEE MTT-S International Microwave Symposium Digest (1985)“…A new theoretical approach has been developed to analyze and design a double balanced mixer using FETs. This approach also enables single ended and single…”
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4
35 GHz pseudomorphic HEMT MMIC power amplifier
Published in 1991 IEEE MTT-S International Microwave Symposium Digest (1991)“…0.25 mu m-gate-length double-heterojunction InGaAs pseudomorphic HEMTs (high-electron-mobility transistors) have been integrated into a three-stage power…”
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Conference Proceeding -
5
The Design and Performance of a Wideband Monolithic Double Balanced Mixer using FETs
Published in 1985 15th European Microwave Conference (01-09-1985)“…A new theoretica1 approach has been developed to analyze and des ign a double balanced mixer using FETs. A brief description of the theoretical analysis will…”
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Conference Proceeding -
6
An EHF Coplanar Monolithic Single Balanced Mixed using Mott Diodes
Published in 1985 15th European Microwave Conference (01-09-1985)“…A 30 GHz monolithic low noise balanced mixer has been developed using an integrated "bow tie" antenna/WG transition and low parasitic Mott diodes. The diodes…”
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7
A 30 GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element
Published in Microwave and Millimeter-Wave Monolithic Circuits (1985)“…A 30 GHz monolithic low noise balanced mixer has been developed using an integrated 'bow tie' antenna/WG transition and low parasitic Mott diodes. The diodes…”
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8
A 30-GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element
Published in IEEE transactions on microwave theory and techniques (01-12-1985)“…This paper will describe a 30-GHz monolithic low-noise balanced mixer which has been developed using an integrated bow-tie antenna to waveguide transition and…”
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Journal Article -
9
A 30-GHz monolithic single balanced mixer with integrated dipole receiving element
Published in IEEE transactions on electron devices (01-12-1985)“…This paper will describe a 30-GHz monolithic low-noise balanced mixer which has been developed using an integrated bow-tie antenna to waveguide transition and…”
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Journal Article -
10
A 30 GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element
Published in 1985 IEEE MTT-S International Microwave Symposium Digest (1985)“…A 30 GHz monolithic low noise balanced mixer has been developed using an integrated 'bow tie' antenna/WG transition ad Iow parasitic Mott diodes. The diodes…”
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Conference Proceeding -
11
Monolithic HEMT LNAS for radar, EW, and COMM
Published in Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium (1989)“…Three monolithic high electron-mobility transistor (HEMT) low-noise amplifiers (LNAs) were developed that were designed for 7-11-GHz airborne radar, 2-18-GHz…”
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12
Monolithic HEMT LNAS for radar, EW, and COMM
Published in IEEE MTT-S International Microwave Symposium Digest (1989)“…Several monolithic HEMT (high electron mobility transistors) low-noise amplifiers (LNAs), designed for 7-11-GHz airborne radar, 2-18-GHz electronic warfare,…”
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13
35 GHz pseudomorphic HEMT MMIC power amplifier
Published in IEEE 1991 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (1991)“…Double-heterojunction InGaAs pseudomorphic HEMTs (high electron mobility transistors) with a 0.25 mu m gate-length have been integrated into a three-stage…”
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Conference Proceeding