Search Results - "Upton, M.A.G."

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  1. 1

    Analysis and Characterization of Some Common Transitions and Interconnections using Three-Dimensional Modelling Techniques by Nightingale, S.J., Upton, M.A.G.

    Published in 1984 14th European Microwave Conference (01-09-1984)
    “…This paper will present the analysis and characterization of several different transitions and interconnections which are in common use, but have not to date…”
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    Conference Proceeding
  2. 2

    HEMT Low-Noise Amplifier for Ka-Band by Upton, M.A.G., Smith, P.M., Chao, P.C.

    “…Using 0.25 micron gate-length High Electron Mobility Transistors (HEMTs), a two-stage amplifier has been developed that demonstrates the potential for…”
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    Conference Proceeding
  3. 3

    The Design and Performance of a Double Balanced Mixer Using FETs by Nightingale, S.J., Upton, M.A.G., Dandekar, N.V.

    “…A new theoretical approach has been developed to analyze and design a double balanced mixer using FETs. This approach also enables single ended and single…”
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    Conference Proceeding
  4. 4

    35 GHz pseudomorphic HEMT MMIC power amplifier by Ferguson, D.W., Allen, S.A., Kao, M.Y., Smith, P.M., Chao, P.C., Upton, M.A.G., Ballingall, J.M.

    “…0.25 mu m-gate-length double-heterojunction InGaAs pseudomorphic HEMTs (high-electron-mobility transistors) have been integrated into a three-stage power…”
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    Conference Proceeding
  5. 5

    The Design and Performance of a Wideband Monolithic Double Balanced Mixer using FETs by Nightingale, S. J., Upton, M.A.G., Dandekar, N.V., Kong, W.M.

    Published in 1985 15th European Microwave Conference (01-09-1985)
    “…A new theoretica1 approach has been developed to analyze and des ign a double balanced mixer using FETs. A brief description of the theoretical analysis will…”
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    Conference Proceeding
  6. 6

    An EHF Coplanar Monolithic Single Balanced Mixed using Mott Diodes by Nightingale, S.J., Upton, M.A.G., Mishra, U.K., Palmateer, S.C., Smith, P.M.

    Published in 1985 15th European Microwave Conference (01-09-1985)
    “…A 30 GHz monolithic low noise balanced mixer has been developed using an integrated "bow tie" antenna/WG transition and low parasitic Mott diodes. The diodes…”
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    Conference Proceeding
  7. 7

    A 30 GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element by Nightingale, S.J., Upton, M.A.G., Mishra, U.K., Palmateer, S.C., Smith, P.M.

    “…A 30 GHz monolithic low noise balanced mixer has been developed using an integrated 'bow tie' antenna/WG transition and low parasitic Mott diodes. The diodes…”
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    Conference Proceeding
  8. 8

    A 30-GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element by Nightingale, S.J., Upton, M.A.G., Mitchell, B.K., Mishra, U.K., Palamateer, S.C., Smith, P.M.

    “…This paper will describe a 30-GHz monolithic low-noise balanced mixer which has been developed using an integrated bow-tie antenna to waveguide transition and…”
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    Journal Article
  9. 9

    A 30-GHz monolithic single balanced mixer with integrated dipole receiving element by Nightingale, S.J., Upton, M.A.G., Mitchell, B.K., Mishra, U.K., Palamateer, S.C., Smith, P.M.

    Published in IEEE transactions on electron devices (01-12-1985)
    “…This paper will describe a 30-GHz monolithic low-noise balanced mixer which has been developed using an integrated bow-tie antenna to waveguide transition and…”
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    Journal Article
  10. 10

    A 30 GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element by Nightingale, S.J., Upton, M.A.G., Mishra, U.K., Palmateer, S.C., Smith, P.M.

    “…A 30 GHz monolithic low noise balanced mixer has been developed using an integrated 'bow tie' antenna/WG transition ad Iow parasitic Mott diodes. The diodes…”
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    Conference Proceeding
  11. 11

    Monolithic HEMT LNAS for radar, EW, and COMM by Upton, M.A.G., Snow, K.H., Goldstick, D.I., Kong, W.M., Kao, M.-Y., Kopp, W.F., Ho, P., Tessmer, G.J., Lee, B.R., Wypych, K.A., Jabra, A.A.

    “…Three monolithic high electron-mobility transistor (HEMT) low-noise amplifiers (LNAs) were developed that were designed for 7-11-GHz airborne radar, 2-18-GHz…”
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    Conference Proceeding
  12. 12

    Monolithic HEMT LNAS for radar, EW, and COMM by Upton, M.A.G., Snow, K.H., Goldstick, D.I., Kong, W.M., Kao, M.-Y., Kopp, W.F., Ho, P., Tessmer, G.J., Lee, B.R., Wypych, K.A., Jabra, A.A.

    “…Several monolithic HEMT (high electron mobility transistors) low-noise amplifiers (LNAs), designed for 7-11-GHz airborne radar, 2-18-GHz electronic warfare,…”
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    Conference Proceeding
  13. 13

    35 GHz pseudomorphic HEMT MMIC power amplifier by Ferguson, D.W., Allen, S.A., Kao, M.Y., Smith, P.M., Chao, P.C., Upton, M.A.G., Ballingall, J.M.

    “…Double-heterojunction InGaAs pseudomorphic HEMTs (high electron mobility transistors) with a 0.25 mu m gate-length have been integrated into a three-stage…”
    Get full text
    Conference Proceeding