Search Results - "Upadhyaya, Parag"
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2.8 A pulse-position-modulation phase-noise-reduction technique for a 2-to-16GHz injection-locked ring oscillator in 20nm CMOS
Published in 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) (01-02-2014)“…High-speed transceivers embedded inside FPGAs require software-programmable clocking circuits to cover a wide range of data rates across different channels…”
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Conference Proceeding -
2
A 56-Gb/s PAM4 Wireline Transceiver Using a 32-Way Time-Interleaved SAR ADC in 16-nm FinFET
Published in IEEE journal of solid-state circuits (01-04-2017)“…A 56-Gb/s PAM4 wireline transceiver testchip is implemented in 16-nm FinFET. The current mode logic transmitter incorporates an auxiliary current injection at…”
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Journal Article -
3
A 1.24-pJ/b 112-Gb/s (870 Gb/s/Mm) Transceiver for In-Package Links in 7-nm FinFET
Published in IEEE journal of solid-state circuits (01-04-2022)“…This article describes the design of a 1.24-pJ/b 112-Gb/s PAM4 transceiver test chip in 7-nm FinFET for in-package die-to-die communication. The receiver…”
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Journal Article -
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A 40-to-56 Gb/s PAM-4 Receiver With Ten-Tap Direct Decision-Feedback Equalization in 16-nm FinFET
Published in IEEE journal of solid-state circuits (01-12-2017)“…A 40-56 Gb/s PAM-4 receiver with ten-tap decision-feedback equalization (DFE) targeting chip-to-module and board-to-board cable interconnects is designed in…”
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Journal Article -
5
A 40-to-64 Gb/s NRZ Transmitter With Supply-Regulated Front-End in 16 nm FinFET
Published in IEEE journal of solid-state circuits (01-12-2016)“…A 3-tap 64 Gb/s NRZ transmitter using a quad-rate architecture is designed in 16 nm FinFET. The design incorporates circuit techniques and topologies that take…”
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Journal Article -
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A Fully Adaptive 19-58-Gb/s PAM-4 and 9.5-29-Gb/s NRZ Wireline Transceiver With Configurable ADC in 16-nm FinFET
Published in IEEE journal of solid-state circuits (01-01-2019)“…The design of a dual-mode, 19-58-Gb/s four-level pulse-amplitude modulation (PAM-4) and 9.5-29-Gb/s nonreturn to zero (NRZ), transceiver in 16-nm FinFET is…”
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A 7.4-to-14GHz PLL with 54fsrms jitter in 16nm FinFET for integrated RF-data-converter SoCs
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01-02-2018)“…Direct-RF data converters [1,2] have seen increased adoption in remote-radio-head TX and RX, due to their unparalleled bandwidth and flexibility. However,…”
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Conference Proceeding -
8
A 32.75-Gb/s Voltage-Mode Transmitter With Three-Tap FFE in 16-nm CMOS
Published in IEEE journal of solid-state circuits (01-10-2017)“…This paper describes a 32.75-Gb/s voltage-mode transmitter (TX) with three-tap feed forward equalization that is fabricated in a 16-nm FinFET CMOS technology…”
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Journal Article -
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A 0.5-16.3 Gbps Multi-Standard Serial Transceiver With 219 mW/Channel in 16-nm FinFET
Published in IEEE journal of solid-state circuits (01-07-2017)“…This paper presents a flexible-reach 0.5-16.3 Gb/s serial transceiver which is integrated into a field-programmable gate array (FPGA) and fabricated in 16-nm…”
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Journal Article -
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A fully adaptive 19-to-56Gb/s PAM-4 wireline transceiver with a configurable ADC in 16nm FinFET
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01-02-2018)“…Trends in IoT and cloud computing continue to accelerate bandwidth demand, requiring technology innovation to cover 50G, 100G and 400G ports without…”
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Conference Proceeding -
11
A O.96pJ/b 7 × 50Gb/s-per-Fiber WDM Receiver with Stacked 7nm CMOS and 45nm Silicon Photonic Dies
Published in 2023 IEEE International Solid- State Circuits Conference (ISSCC) (19-02-2023)“…Emerging applications such as machine learning, high-performance computing, and cloud storage continue to push compute demands at the data center. To keep up,…”
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Conference Proceeding -
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A 0.5-16.3 Gb/s Fully Adaptive Flexible-Reach Transceiver for FPGA in 20 nm CMOS
Published in IEEE journal of solid-state circuits (01-08-2015)“…This paper describes a 0.5-16.3 Gb/s fully adaptive wireline transceiver embedded in 20 nm CMOS FPGA. The receiver utilizes bandwidth adjustable CTLE and…”
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Journal Article -
13
Design Techniques for Load-Independent Direct Bulk-Coupled Low Power QVCO
Published in IEEE transactions on microwave theory and techniques (01-10-2013)“…Design techniques for a load-independent low-power low-phase-noise CMOS LC direct bulk-coupled quadrature voltage-controlled oscillator (DBC-QVCO) is presented…”
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Journal Article -
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A Low-Power 0.5-6.6 Gb/s Wireline Transceiver Embedded in Low-Cost 28 nm FPGAs
Published in IEEE journal of solid-state circuits (01-11-2013)“…This paper describes the design of a 0.5-6.6 Gb/s fully-adaptive low-power quad transceiver embedded in low-leakage 28 nm CMOS FPGAs. Integration techniques…”
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Journal Article Conference Proceeding -
15
Design techniques for 32.75Gb/s and 56Gb/s wireline transceivers in 16nm FinFET
Published in 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01-10-2017)“…This paper describes circuit techniques for high speed transceivers used in FPGA applications. Three architectures in 16nm FinFET encompassing NRZ and PAM4…”
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Conference Proceeding -
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Wideband flexible-reach techniques for a 0.5-16.3Gb/s fully-adaptive transceiver in 20nm CMOS
Published in Proceedings of the IEEE 2014 Custom Integrated Circuits Conference (01-09-2014)“…This paper describes the design techniques to achieve wideband flexible-reach operation in a fully-adaptive transceiver embedded in a 20nm CMOS FPGA. The…”
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Conference Proceeding -
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3.7 A 40-to-64Gb/s NRZ transmitter with supply-regulated front-end in 16nm FinFET
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01-01-2016)“…Due to increasing bandwidth demand in data centers and telecommunication infrastructures, the maximum data-rate of wireline transceivers is projected to double…”
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Conference Proceeding -
18
High Performance PIN Diode in 0.18-μm SiGe BiCMOS Process for Broadband Monolithic Control Circuits
Published in 2006 European Microwave Integrated Circuits Conference (01-09-2006)“…This paper presents a novel high isolation and low insertion loss broadband PIN diode implemented in a standard 0.18 μm SiGe BiCMOS process for upper X-band…”
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Conference Proceeding -
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A 0.5-16.3Gbps multi-standard serial transceiver with 219mW/channel in 16nm FinFET
Published in ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference (01-09-2016)“…This paper presents a flexible 0.5-16.3Gb/s serial transceiver - fabricated in 16nm FinFET CMOS - and consuming 219mW/channel at 16.3Gb/s. The transceiver is…”
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Conference Proceeding -
20
6.3 A 40-to-56Gb/s PAM-4 receiver with 10-tap direct decision-feedback equalization in 16nm FinFET
Published in 2017 IEEE International Solid-State Circuits Conference (ISSCC) (01-02-2017)“…The increasing bandwidth demand in data centers and telecommunication infrastructures had prompted new electrical interface standards capable of operating up…”
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Conference Proceeding