Search Results - "Umimoto, H."

Three-dimensional numerical simulation of local oxidation of silicon by Umimoto, H., Odanaka, S.

“…The nitride mask bending stress is modeled in three dimensions by using the beam bending theory. The stress effect on the oxide growth is taken into account…”
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The inverse-narrow-width effect of LOCOS isolated n-MOSFET in a high-concentration p-well by Ohe, K., Yabu, T., Kugo, S., Umimoto, H., Odanaka, S.

“…The inverse-narrow-width effect (INWE) of a LOCOS-isolated n-MOSFET formed in high concentration p-wells is described. The threshold behavior is characterized…”
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Numerical simulation of stress-dependent oxide growth at convex and concave corners of trench structures by Umimoto, H., Odanaka, S., Nakao, I.

“…A numerical simulation of oxide thinning at convex and concave corners of trench structures is discussed. The stress effect on the oxide growth is modeled by…”
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SMART-II: a three-dimensional CAD model for submicrometer MOSFET's by Odanaka, S., Hiroki, A., Ohe, K., Moriyama, K., Umimoto, H.

“…The authors describe a three-dimensional CAD model for submicrometer MOSFETs. The model has been implemented in a three-dimensional process/device integrated…”
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SMART-P: rigorous three-dimensional process simulator on a supercomputer by Odanaka, S., Umimoto, H., Wakabayashi, M., Esaki, H.

“…A description is given of a three-dimensional process simulator, named SMART-P, that is based on the finite-difference approach to the supercomputer FACOM…”
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Numerical modeling of nonplanar oxidation coupled with stress effects by Umimoto, H., Odanaka, S., Nakao, I., Esaki, H.

“…The study focuses on the numerical solution method based on a finite-difference approach with the coordinate transformation method for simulating the nonplanar…”
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A self-aligned retrograde twin-well structure with buried p+-layer by ODANAKA, S, YABU, T, SHIMIZU, N, UMIMOTO, H, OHZONE, T

“…The retrograde twin wells and buried p( ) layer are fabricated by a single lithographic step using high-energy ion implantation. The retrograde n-well is…”
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Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach by Noda, T., Vandervorst, W., Felch, S., Parihar, V., Cuperus, A., Mcintosh, R., Vrancken, C., Rosseel, E., Bender, H., Van Daele, B., Niwa, M., Umimoto, H., Schreutelkamp, R., Absil, P.P., Jurczak, M., De Meyer, K., Biesemans, S., Hoffmann, T.Y.

“…n-type dopant diffusion during sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through the experiments and atomistic KMC modeling…”
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Improvement of RSF for a statistical design of lithographic process by Goda, A., Misaka, A., Umimoto, H., Odanaka, S.

“…A statistical design method for lithographic process using the RSM (Response Surface Method) is developed. The RSF for CD (Critical Dimension) in optical…”
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Non-destructive inverse modeling of copper interconnect structure for 90nm technology node by Kunikiyo, T., Watanabe, T., Kanamoto, T., Asazato, H., Shirota, M., Eikyu, K., Ajioka, Y., Makino, H., Ishikawa, K., Iwade, S., Inoue, Y., Yamashita, K., Kobayashi, M., Gohda, A., Oda, Y., Yamaguchi, R., Umimoto, H., Ohtani, K.

“…We propose non-destructive inverse modeling of copper interconnect cross-sectional structures, which reproduces the pitch dependence of intraand interlayer…”
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A self-aligned retrograde twin-well structure with buried p/sup +/-layer by Odanaka, S., Yabu, T., Shimizu, N., Umimoto, H., Ohzone, T.

“…A self-aligned retrograde twin-well structure with a buried p/sup +/-layer surrounding the n-well is presented. The retrograde twin well and buried p/sup…”
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A self-aligned retrograde twin-well structure with buried p/sup +/-layer by Odanaka, S., Yabu, T., Shimizu, N., Umimoto, H., Ohzone, T.

“…The retrograde twin wells and buried p/sup +/ layer are fabricated by a single lithographic step using high-energy ion implantation. The retrograde n-well is…”
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A self-aligned retrograde twin-well structure with buried p+-layer by ODANAKA, S, YABU, T, SHIMIZU, N, UMIMOTO, H, OHZONE, T

“…A self-aligned retrograde twin-well structure with a buried p( )-layer surrounding the n-well is presented. The retrograde twin well and buried p( )-layer are…”
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A self-aligned retrograde twin-well structure with buried p super(+)-layer by Odanaka, S, Yabu, T, Shimizu, N, Umimoto, H, Ohzone, T

“…This paper reports a self-aligned retrograde twin-well structure with a buried p super(+)-layer surrounding the n-well. The retrograde twin wells and buried p…”
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A Three-Dimensional Dynamic Simulation of Borophosphosilicate Glass Flow by Umimoto, H., Odanaka, S., Imai, S.

“…This paper describes a three-dimensional simulation of Borophosphosilicate glass (BPSG) flow for the first time. The viscosity of BPSG is modeled by…”
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Impact of the reduction of the gate to drain capacitance on low voltage operated CMOS devices by Yamashita, K., Nakaoka, H., Kurimoto, K., Umimoto, H., Odanaka, S.

“…The effect of the gate to drain capacitance on low voltage operated CMOS devices is investigated. It is found that the Miller and feed-forward effects are…”
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A 0.18 /spl mu/m Ti-salicided p-MOSFET with shallow junctions fabricated by rapid thermal processing in an NH/sub 3/ ambient by Segawa, M., Yabu, T., Arai, M., Moriwaki, M., Umimoto, H., Sekiguchi, M., Kanda, A.

“…This paper reports a 0.18 /spl mu/m Ti-salicided p-MOSFET with shallow junctions fabricated by rapid thermal processing (RTP) in an NH/sub 3/ ambient and low…”
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High speed 0.1 /spl mu/m dual gate CMOS with low energy phosphorus/boron implantation and cobalt salicide by Hori, A., Umimoto, H., Nakaoka, H., Sekiguchi, M., Segawa, M., Arai, M., Takase, M., Kanda, A.

“…A novel dual gate CMOS with low energy phosphorus/boron implantation and cobalt salicide is proposed. This technology suppresses boron penetration for pMOS,…”
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A statistical critical dimension control at CMOS cell level by Misaka, A., Goda, A., Matsuoka, K., Umimoto, H., Odanaka, S.

“…This paper reports a new statistical methodology for controlling the spreads of the CD (critical dimension) distribution in the lithography process. Response…”
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Trench Isolation with Boron Implanted Side-Walls for Controlling Narrow-Width Effect of n-MOS Threshold Voltages by Fuse, G., Odanaka, S., Sasago, M., Fukumoto, M., Shinohara, S., Umimoto, H., Yabu, T., Ohzone, T., Ishihara, T.

“…Trench isolation technology with boron implanted vertical side-walls is presented andproved to be useful for completely suppressing humps in subthreshold…”
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