Search Results - "Ulyashin, A.G"

ITO deposited by pyrosol for photovoltaic applications by Chebotareva, A.B., Untila, G.G., Kost, T.N., Jorgensen, S., Ulyashin, A.G.

“…The goal of this work is to investigate morphology, electrical and optical properties of indium-tin-oxide (ITO) deposited by pyrosol on glass and Si substrates…”
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Analysis of ITO thin layers and interfaces in heterojunction solar cells structures by AFM, SCM and SSRM methods by Maknys, K., Ulyashin, A.G., Stiebig, H., Kuznetsov, A.Yu, Svensson, B.G.

“…Atomic force microscopy (AFM), scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were used for the analysis of the…”
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Analysis of thin layers and interfaces in ITO/a-Si:H/c-Si heterojunction solar cell structures by secondary ion mass spectrometry by Christensen, J.S., Ulyashin, A.G., Maknys, K., Kuznetsov, A.Yu, Svensson, B.G.

“…Secondary ion mass spectrometry (SIMS) analysis of In, O, Si, and H concentrations versus depth distributions in ITO(In-Sn-O)/(n,p)a-Si:H/(p,n)-Si and…”
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Hydrogen transformations in Si-based solar structures studied by precise FTIR spectroscopy by Akhmetov, V.D., Ulyashin, A.G., Holt, A., Kittler, M.

“…In this work, an attempt to clarify the origin of a very pronounced effect of the minority carrier lifetime evolution in SiN x :H/a-Si:H/Si/a-Si:H/SiN x :H and…”
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Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1-xGex by ULYASHIN, A. G, ABROSIMOV, N. V, BENTZEN, A, SUPHELLEN, A, SAUAR, E, SVENSSON, B. G

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Impurities and defects in multicrystalline silicon for solar cells: low-temperature photoluminescence investigations by Mudryi, A.V, Patuk, A.I, Shakin, I.A, Ulyashin, A.G, Job, R, Fahrner, W.R, Fedotov, A, Mazanik, A, Drozdov, N

“…The low-temperature photoluminescence (PL) measurements (down to 4.2 K) were employed for the investigations of the defects and impurities in multicrystalline…”
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Deposition by magnetron sputtering and characterization of indium tin oxide thin films by Mudryi, A.V., Ivaniukovich, A.V., Ulyashin, A.G.

“…In this work the properties of indium tin oxide (ITO) films deposed on glass substrates by magnetron sputtering technique in the temperature range below 200 °C…”
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Similarity of optical properties of hydrides and semiconductors for antireflection coatings by Karazhanov, S.Zh, Ulyashin, A.G.

“…The electronic structure and optical properties of the complex hydrides Ca 2 FeH 6 , Ca 2 RuH 6 , Mg 2 FeH 6 , Mg 2 RuH 6 , Sr 2 FeH 6 , Sr 2 RuH 6 and Sr 2…”
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Hydrides as materials for semiconductor electronics by Karazhanov, S.Zh, Ulyashin, A.G., Vajeeston, P., Ravindran, P.

“…Systematic studies using density functional theory have shown that some hydrides possess the features of semiconductors. These features include larger…”
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Nano-structural properties of ZnO films for Si based heterojunction solar cells by Breivik, T.H., Diplas, S., Ulyashin, A.G., Gunnæs, A.E., Olaisen, B.R., Wright, D.N., Holt, A., Olsen, A.

“…Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the…”
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Classification of hydrides according to features of band structure by Karazhanov, S.Zh, Sheripov, U., Ulyashin, A.G.

“…Band structure of hydrides has been studied by density functional calculations. From analysis of band structures, it is found that, similar to semiconductors,…”
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Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon by Simoen, E., Claeys, C., Rafí, J.M., Ulyashin, A.G.

“…The mechanism of a low-temperature doping of silicon initiated by atomic hydrogen is studied. The formation of thermal donors (TDs) in direct-plasma…”
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Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing by Ulyashin, A.G., Christensen, J.S., Svensson, B.G., Kögler, R., Skorupa, W.

“…In this study gettering of atomic hydrogen in-diffused from a plasma hydrogenated surface into self ion implanted and annealed Si is investigated. Cz Si p-type…”
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Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si 1− x Ge x by Ulyashin, A.G., Abrosimov, N.V., Bentzen, A., Suphellen, A., Sauar, E., Svensson, B.G.

“…In this work we have investigated the influence of the Ge composition on the minority carrier lifetime in Czochralski (Cz) grown monocrystalline Si 1− x Ge x…”
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The influence of the amorphous silicon deposition temperature on the efficiency of the ITO/A-Si:H/C-Si heterojunction (HJ) solar cells and properties of interfaces by Ulyashin, A.G, Job, R, Scherff, M, Gao, Meizhen, Fahrner, W.R, Lyebyedyev, D, Roos, N, Scheer, H.-C

“…Some crucial limiting process steps of ITO/(n)a-Si:H/(p)c-Si solar cell manufacturing were investigated. The influence of amorphous silicon deposition…”
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Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon by JOB, R, ULYASHIN, A. G, FAHRNER, W. R, IVANOV, A. I, PALMETSHOFER, L

“…Oxygen and hydrogen accumulations at buried implantation-damage layers were studied after post-implant-ation annealing of hydrogen- and helium-implanted…”
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Electronic device fabrication by simple hydrogen enhanced thermal donor formation processes in p-type Cz-silicon by Job, R, Fahrner, W.R, Ulyashin, A.G

“…The incorporation of hydrogen into p-type Czochralski (Cz) silicon by a plasma results in an enhanced thermal donor (TD) formation. Counter doping by TDs and a…”
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Formation of deep p-n junctions in p-type Czochralski grown silicon by hydrogen plasma treatment by ULYASHIN, A. G, BUMAY, Y. A, JOB, R, FAHRNER, W. R

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Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon by Simoen, E., Claeys, C., Loo, R., De Gryse, O., Clauws, P., Job, R., Ulyashin, A.G., Fahrner, W.

“…In this paper, an overview will be given about analytical techniques which are suitable for the study of oxygen and oxygen precipitation in highly- and…”
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The evolution of hydrogen molecule formation in hydrogen-plasma-treated Czochralski silicon by Job, R., Ulyashin, A.G., Fahrner, W.R.

“…The formation of H2 molecules in voids/platelets and their evolution upon annealing were studied. Standard p- and n-type Czochralski (Cz) silicon wafers have…”
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