Search Results - "Ulrici, W."

A carbon-nitrogen complex in gallium phosphide by ULRICI, W, CLERJAUD, B

“…In gallium phosphide containing nitrogen ([N-P] > 10(17) cm(-3)) and carbon ([C-P] > 10(16) cm(-3)) a sharp local vibrational mode at 2087.12 cm(-1) at T=7 K…”
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Thermally induced carbon-oxygen complexes in GaAs by Ulrici, W., Jurisch, M.

“…In LEC‐grown oxygen‐containing GaAs, a vibrational absorption line is observed at 2059.6 cm–1 for T = 7 K after long‐time annealing at (700 ± 100) °C. This…”
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Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique by ULRICI, W, CLERJAUD, B

“…In LEC-grown GaAs:S, two vibrational absorption lines are measured at 2382.2 and 2392.8 cm−1 (T=7 K) and assigned to 11B-H and 10B-H stretching modes. Uniaxial…”
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Nitrogen-related defects in GaP and GaAs by Ulrici, W., Clerjaud, B.

“…There is presently a great interest in dilute III–V nitrides. The investigation of defects in these materials is rather scarce and of importance, as the…”
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Defect distribution in boron-reduced GaAs crystals grown by vapour-pressure-controlled Czochralski technique by Kiessling, F.-M., Albrecht, M., Irmscher, K., Krause-Rehberg, R., Ulrici, W., Rudolph, P.

“…GaAs crystals have been grown without B 2O 3 encapsulation by the vapour-pressure-controlled Czochralski (VCz) method to reduce undesired boron incorporation…”
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The nitrogen-hydrogen-vacancy complex in GaAs by Ulrici, W., Kiessling, F.-M., Rudolph, P.

“…The local vibrational mode absorption lines at 3079.2 and 983.3 cm−1, measured in semi‐insulating LEC‐grown GaAs, are due to the stretching and wagging mode of…”
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Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation by Kiessling, F.-M., Rudolph, P., Neubert, M., Juda, U., Naumann, M., Ulrici, W.

“…The growth experiments and properties of undoped GaAs crystals grown by the vapour pressure controlled Czochralski (VCz) method without boric oxide encapsulant…”
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Vibrational modes of a di-hydrogen complex in GaAs by Ulrici, W., Jurisch, M.

“…Two vibrational absorption lines at 3015.5 and 3092.8cm−1, observed in liquid encapsulation Czochralski-grown GaAs, are investigated and are assigned to…”
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Vibrational Absorption of Hydrogen Bonded to Interstitial Oxygen in GaAs and GaP by Ulrici, W., Jurisch, M.

“…In LEC‐grown GaAs and GaP with an oxygen content larger than 1015 cm—3, two sharp vibrational absorption lines are investigated located at 3108.0 as well as…”
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Phosphorus-hydrogen complexes in LEC-grown InP by Ulrici, W., Kwasniewski, A., Czupalla, M., Neubert, M.

“…In LEC‐grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm–1. All these lines are due to…”
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Vibrational modes of a hydrogen-impurity centre in LEC-GaAs by Ulrici, W., Jurisch, M.

“…Two sharp vibrational absorption lines at 3079.2 and 983.3 cm −1 are investigated, occurring in semi-insulating LEC-grown GaAs with their intensities strictly…”
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Hydrogen passivation of the SiGa donor in GaP by Ulrici, W., Clerjaud, B., Côte, D.

“…In LEC‐grown GaP doped with silicon, two vibrational absorption lines are measured at 2175.1 and 2190.3 cm–1 (T = 7 K). These lines are due to H stretching…”
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Hydrogen passivation of the Si Ga donor in GaP by Ulrici, W., Clerjaud, B., Côte, D.

“…Abstract In LEC‐grown GaP doped with silicon, two vibrational absorption lines are measured at 2175.1 and 2190.3 cm –1 ( T = 7 K). These lines are due to H…”
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Vibrational Absorption of a Nitrogen-Oxygen Complex in GaP by Ulrici, W., Czupalla, M.

“…In liquid encapsulated Czochralski (LEC) grown GaP, a set of twelve vibrational absorption lines is measured in the frequency region 500 to 1150 cm—1. They…”
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Electronic level of interstitial hydrogen in GaAs by CLERJAUD, B, GENDRON, F, KRAUSE, M, ULRICI, W

“…The C-H complex in GaAs is evidenced by its stretching local mode of vibration. Although C and H are present, this complex only forms in p-, not n-type…”
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Growth and characterization of carbon-doped low-temperature GaAs by Herfort, J., Ulrici, W., Moreno, M., Ploog, K.H.

“…We present the results of double crystal X-ray diffraction and infrared absorption measurements on C-doped low-temperature GaAs (LT-GaAs:C) layers grown by…”
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Local-Vibrational-Mode Absorption of Two O-H Centres in GaP by Ulrici, W., Czupalla, M., Seifert, M.

“…In LEC‐grown GaP, two vibrational lines at 3250.9 cm−1 and 3106.0 cm−1 are measured and assigned to the stretching modes of two different O–H centres. In GaP…”
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Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation by Kiessling, F.-M., Neubert, M., Rudolph, P., Ulrici, W.

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Local-vibrational-mode absorption of interstitial oxygen in GaP by Ulrici, W, Clerjaud, B, Côte, D

“…A local-vibrational-mode absorption line is measured at 1006.8cm−1 (T=7K) in GaP and identified as due to the antisymmetric stretching mode of interstitial…”
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Complexes of group-VI donors with hydrogen in GaP by Clerjaud, B, Côte, D, Ulrici, W

“…Local vibrational modes due to complexes of hydrogen with sulfur, selenium and tellurium in gallium phosphide are reported together with the corresponding mode…”
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