Search Results - "Ulin, V.P"

Initial stages of MBE growth and formation of CaF2/Si(001) high-temperature interface by Sokolov, N.S, Suturin, S.M, Ulin, V.P, Pasquali, L, Selvaggi, G, Nannarone, S

“…Calcium fluoride on silicon is the well-known system where many interesting phenomena are observed during initial stages of growth and formation of…”
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Creation and plasmon anisotropy spectroscopy of wedge-shaped gold nanoclusters conditioned by GaAs(001) surface by Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Alekseev, P.A., Borodin, B.R., Soldatenkov, F.Yu, Nashchekin, A.V., Khakhulin, S.A., Komkov, O.S.

“…•Wedge-shaped gold nanoclusters are created on gallium arsenide surface.•Elongated Au-wedge nanoclusters are equally oriented on GaAs crystal surface.•Gold…”
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Silicon–carbon nanocomposites produced by reduction of carbon monofluoride by silicon by Astrova, E.V., Ulin, V.P., Parfeneva, A.V., Rumyantsev, A.M., Voronkov, V.B., Nashchekin, A.V., Nevedomskiy, V.N., Koshtyal, Y.M., Tomkovich, M.V.

“…It is suggested to form porous silicon-carbon nanocomposites via thermal reduction of carbon monofluoride by silicon. For this purpose a mixture of powders of…”
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Dissimilar gold nanoclusters at GaAs(0 0 1) surface: Formation chemistry, structure, and localized plasmons by Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Soldatenkov, F.Yu, Makarenko, I.V., Levitskii, V.S., Nashchekin, A.V., Alekseev, P.A.

“…•Two types of gold nanoclusters are formed on annealing Au/GaAs structures.•The clusters are either buried in GaAs or located just on crystal surface.•The…”
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Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism by Ulin, V. P., Ulin, N. V., Soldatenkov, F. Yu

“…The interaction of heavily doped p - and n -type Si crystals with hydrofluoric acid in the dark with and without contact with metals having greatly differing…”
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Plasmonic anisotropy of In nanocluster arrays on InAs(001) surface observed by differential reflectance spectroscopy by Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Gordeeva, A.B., Petrov, V.N.

“…Reflectance anisotropy (RA) spectroscopy is applied to study indium nanocluster arrays formed on InAs(001) crystal surface by electrochemical treating. The…”
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Porous silicon and its applications in biology and medicine by Ksenofontova, O. I., Vasin, A. V., Egorov, V. V., Bobyl’, A. V., Soldatenkov, F. Yu, Terukov, E. I., Ulin, V. P., Ulin, N. V., Kiselev, O. I.

“…Development of safe container materials for targeted and controlled drug delivery to the right site in the body is one of the most important aspects of modern…”
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Surface of porous silicon under hydrophilization and hydrolytic degradation by Ulin, V. P., Ulin, N. V., Soldatenkov, F. Yu, Semenov, A. V., Bobyl, A. V.

“…Analysis of the IR absorption spectra is used to trace changes in the chemical composition of surface layers of mesoporous silicon crystals during the course…”
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Organic light-emitting diodes based on polyvinylcarbazole films doped with polymer nanoparticles by Aleshin, A. N., Sokolovskaya, A. D., Shcherbakov, I. P., Brunkov, P. N., Ulin, V. P.

“…The optical and electrical properties of light-emitting diode structures with an active layer based on nanocomposite polyvinylcarbazole (PVK) films doped with…”
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Fabrication and optical properties of porous InP structures by Atrashchenko, A.V., Katz, V.N., Ulin, V.P., Evtikhiev, V.P., Kochereshko, V.P.

“…Technology for the fabrication of a homogeneous array of pores in an A3B5 semiconductor matrix has been developed. Characterization with Scanning Electron…”
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Liquid-metal field electron source based on porous GaP by Masalov, S. A., Popov, E. O., Kolos’ko, A. G., Filippov, S. V., Ulin, V. P., Evtikhiev, V. P., Atrashchenko, A. V.

“…We have reported on a new method for obtaining a liquid-metal field emitter. The treatment of a porous crystal of GaP binary semiconducting compound with…”
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Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments by Zegrya, G. G., Savenkov, G. G., Morozov, V. A., Zegrya, A. G., Ulin, N. V., Ulin, V. P., Lukin, A. A., Bragin, V. A., Oskin, I. A., Mikhailov, Yu. M.

“…The sensitivity of an energy-packed compound based on nanoporous silicon and calcium perchlorate to a high-current electron beam is studied. The initiation of…”
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Epitaxial layers of nickel fluoride on Si(111): Growth and stabilization of the orthorhombic phase by Banshchikov, A. G., Golosovskii, I. V., Krupin, A. V., Koshmak, K. V., Sokolov, N. S., Chernenkov, Yu. P., Yagovkina, M. A., Ulin, V. P., Tabuchi, M.

“…The growth and crystal structure of NiF 2 layers on CaF 2 /Si(111) heteroepitaxial substrates have been investigated. It has been shown that molecular beam…”
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Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures by Berkovits, V. L., L’vova, T. V., Ulin, V. P.

“…The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been…”
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Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals by Berkovits, V. L., Gordeeva, A. B., L’vova, T. V., Ulin, V. P.

“…The methods of electron Auger spectroscopy and reflectance anisotropy spectroscopy are used to study monolayer films of gallium nitride formed on the (001)…”
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Calcium fluoride on Si(001): Adsorption mechanisms and epitaxial growth modes by Pasquali, L., Selvaggi, G., Suturin, S.M., Ulin, V.P., Sokolov, N.S., Giglia, A., Nannarone, S., INFM-CNR-TASC Laboratory, s.s. 14, km 163.5 in AREA Science Park, 34012 Basovizza, TS, Mahne, N., Pedio, M.

“…Growth of CaF{sub 2} on Si(001) is studied as a function of the substrate temperature during deposition for coverages from fraction of a monolayer (ML) up to…”
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Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments by Lebedeva, N. M., Usikova, A. A., Evstropov, V. V., Lebedev, M. V., Ulin, V. P., Lantratov, V. M., Andreev, V. M.

“…A correlation between the main parameter of a solar cell, the conversion efficiency, and its dark I – V characteristic is investigated. A formula is derived…”
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Structural properties of GaAs surfaces nitrided in hydrazine-sulfide solutions by Berkovits, V.L., Masson, L., Makarenko, I.V., Ulin, V.P.

“…The surface structure of GaAs(1 0 0), (1 1 1)A, and (1 1 1)B substrates nitrided through the wet chemical treatment in hydrazine-sulfide solution have been…”
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Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces by Samsonenko, Yu. B., Cirlin, G. E., Khrebtov, A. I., Bouravleuv, A. D., Polyakov, N. K., Ulin, V. P., Dubrovskii, V. G., Werner, P.

“…The processes of growth of self-catalyzed GaAs crystal nanowires on Si (111) surfaces modified by three different methods are studied. For the technology of…”
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Initial stages of MBE growth and formation of CaF 2/Si(0 0 1) high-temperature interface by Sokolov, N.S, Suturin, S.M, Ulin, V.P, Pasquali, L, Selvaggi, G, Nannarone, S

“…It has been recently shown [Appl. Surf. Sci. 175–176 (2001) 619] that growth modes and epitaxial relations of CaF 2 on Si(0 0 1) drastically depend on the…”
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