Search Results - "Ulin, V. P."

Plasmon Spectroscopy of Anisotropic Gold Nanoclusters on GaAs(001) Surface Passivated by Sulphur Atoms by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Alekseev, P. A., Soldatenkov, F. Yu, Levitskii, V. A.

“…This work demonstrates how to create the structures Au/GaAs with perfect on-surface gold nanoclusters. In doing so, used is covering the GaAs substrate with…”
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Effect of Chemical Passivation of GaAs(001) Surface on Anisotropy and Orientation of Gold Nanoclusters Formed on It and Their Plasmons by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Alekseev, P. A., Soldatenkov, F. Yu, Levitskii, V. A.

“…The principal role of chemical passivation of GaAs surface in the formation on it of oriented anisotropic nanoclusters of gold is discussed. The nanoclusters…”
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Formation of Silicon Nanoclusters in Disproportionation of Silicon Monoxide by Lozhkina, D. A., Astrova, E. V., Sokolov, R. V., Kirilenko, D. A., Levin, A. A., Parfeneva, A. V., Ulin, V. P.

“…The processes of the disproportionation of solid-phase silicon monoxide, accompanied by the formation of nanocrystalline silicon precipitates in the medium of…”
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Optical Spectroscopy of Schottky Nanostructures Au/GaAs: Plasmon Resonances and Anisotropy by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Soldatenkov, F. Y., Alekseev, P. A., Levitskii, V. S.

“…— The Schottky nanostructures Au/GaAs with Au nanoclusters are prepared by annealing of thin gold films deposited on nitridized GaAs(001) surface. The…”
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Interaction of Fluorocarbon with Silicon Monoxide and Processes of SiC Nanowire Formation by Astrova, E. V., Ulin, V. P., Parfeneva, A. V., Nashchekin, A. V., Nevedomskiy, V. N., Baidakova, M. V.

“…A study of the processes of the thermal carbonization of silicon monoxide in the presence of nonstoichiometric carbon monofluoride demonstrated that raising…”
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Silicon Monoxide Carbonized by Fluorocarbon As a Composite Material for Anodes of Lithium-Ion Batteries by Lozhkina, D. A., Astrova, E. V., Likhachev, A. I., Parfeneva, A. V., Rumyantsev, A. M., Smirnov, A. N., Ulin, V. P.

“…Disperse composite materials based on silicon monoxide and carbon (SiO/C) have been obtained by thermal treatment of a powder mixture consisting of 40 wt % SiO…”
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Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions by Zegrya, G. G., Ulin, V. P., Zegrya, A. G., Ulin, N. V., Frayman, V. M., Mikhailov, Yu. M.

“…An Erratum to this paper has been published: https://doi.org/10.1134/S106378422102016X…”
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Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions by Zegrya, G. G., Ulin, V. P., Zegrya, A. G., Ulin, N. V., Mikhailov, Yu. M.

“…In this paper, we discuss causes of the multidirectional effect of changes in the concentrations of free charge carriers in silicon crystals of p - and n -type…”
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Gold Nanoclusters at the Interface Au/GaAs(001): Preparation, Characterization, and Plasmonic Spectroscopy by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Soldatenkov, F. Yu, Makarenko, I. V., Levitskii, V. S.

“…Local plasmons of gold nanoclusters formed at Au/GaAs interface are observed and investigated. The gold nanoclusters are prepared by thermal annealing of thin…”
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Anisotropy of porous silicon formation rate in p-Si by Astrova, E. V., Zharova, Yu. A., Ulin, V. P., Enicheva, G. V.

“…We studied the anisotropy of meso‐ and microporous silicon formation rate on curved surfaces and on flat samples. Experiments on anodization of model…”
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Structural properties of GaAs surfaces nitrided in hydrazine-sulfide solutions by Berkovits, V.L., Masson, L., Makarenko, I.V., Ulin, V.P.

“…The surface structure of GaAs(1 0 0), (1 1 1)A, and (1 1 1)B substrates nitrided through the wet chemical treatment in hydrazine-sulfide solution have been…”
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Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons by Berkovits, V. L., Kosobukin, V. A., Ulin, V. P., Alekseev, P. A., Soldatenkov, F. Yu, Nashchekin, A. V., Khakhulin, S. A., Komkov, O. S.

“…Using high-temperature annealing of thin gold nanofilms deposited onto the (001) surface of doped p -GaAs crystal with an ultrathin oxide layer, the…”
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Limiting Thickness of Pore Walls Formed in Processes of Anode Etching of Heavily Doped Semiconductors by Zegrya, G. G., Ulin, V. P., Zegrya, A. G., Freiman, V. M., Ulin, N. V., Fadeev, D. V., Savenkov, G. G.

“…With a decrease in the thickness of the walls separating the space of pores in porous semiconductors, the potential energy of interaction between an electron…”
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Fluorocarbon Carbonization of Nanocrystalline Silicon by Astrova, E. V., Ulin, V. P., Parfeneva, A. V., Voronkov, V. B.

“…A novel method to fabricate porous silicon–carbon nanocomposites has been suggested. The method uses carbon monofluoride reduction by silicon. The produced…”
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Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism by Ulin, V. P., Ulin, N. V., Soldatenkov, F. Yu

“…The interaction of heavily doped p - and n -type Si crystals with hydrofluoric acid in the dark with and without contact with metals having greatly differing…”
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Wet chemical nitridation of GaAs (100) by hydrazine solution for surface passivation by Berkovits, V. L., Ulin, V. P., Losurdo, M., Capezzuto, P., Bruno, G., Perna, G., Capozzi, V.

“…A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs (100) surface passivation. Both x-ray photoelectron spectroscopy…”
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Plasmonic anisotropy of In nanocluster arrays on InAs(001) surface observed by differential reflectance spectroscopy by Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Gordeeva, A.B., Petrov, V.N.

“…Reflectance anisotropy (RA) spectroscopy is applied to study indium nanocluster arrays formed on InAs(001) crystal surface by electrochemical treating. The…”
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Giant enhancement of terahertz emission from nanoporous GaP by Atrashchenko, A., Arlauskas, A., Adomavičius, R., Korotchenkov, A., Ulin, V. P., Belov, P., Krotkus, A., Evtikhiev, V. P.

“…In this paper, we have studied the emission of terahertz radiation from nanoporous semiconductor matrices of GaP excited by the femtosecond laser pulses. We…”
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The Effect of Thermal Treatment on Properties of Composite Silicon–Carbon Anodes for Lithium-Ion Batteries by Astrova, E. V., Parfeneva, A. V., Rumyantsev, A. M., Ulin, V. P., Baidakova, M. V., Nevedomskiy, V. N., Nashchekin, A. V.

“…Influence exerted by the temperature of annealing in the atmosphere of argon on the ability of Si‒C nanocomposites to enable a reversible introduction of…”
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Silicon–carbon nanocomposites produced by reduction of carbon monofluoride by silicon by Astrova, E.V., Ulin, V.P., Parfeneva, A.V., Rumyantsev, A.M., Voronkov, V.B., Nashchekin, A.V., Nevedomskiy, V.N., Koshtyal, Y.M., Tomkovich, M.V.

“…It is suggested to form porous silicon-carbon nanocomposites via thermal reduction of carbon monofluoride by silicon. For this purpose a mixture of powders of…”
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