Search Results - "Uginet, J."

Gamma double prime precipitation kinetic in Alloy 718 by Devaux, A., Nazé, L., Molins, R., Pineau, A., Organista, A., Guédou, J.Y., Uginet, J.F., Héritier, P.

“…Gamma double prime (γ′′), precipitation was studied in Alloy 718 using isothermal and isochronal aging heat treatments applied between 943 and 1003 K. It is…”
Get full text

PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications by Chevalier, P., Gianesello, F., Pallotta, A., Goncalves, J. Azevedo, Bertrand, G., Borrel, J., Boissonnet, L., Brezza, E., Buczko, M., Canderle, E., Celi, D., Cremer, S., Derrier, N., Diouf, C., Durand, C., Foussadier, F., Garcia, P., Guitard, N., Fleury, A., Gauthier, A., Kermarrec, O., Lajoinie, J., Legrand, C.A., Milon, V., Monsieur, F., Mourier, Y., Muller, D., Ney, D., Paulin, R., Pelloux, N., Renard, C., Rellier, M.L., Scheer, P., Sicard, I., Vulliet, N., Juge, A., Granger, E., Gloria, D., Uginet, J., Garchery, L., Paillardet, F.

“…While 5G wireless networks are currently deployed around the world, preliminary research activities have begun to look beyond 5G and conceptualize 6G standard…”
Get full text

2.6GHz ultra-wide voltage range energy efficient dual A9 in 28nm UTBB FD-SOI by Jacquet, D., Cesana, G., Flatresse, P., Arnaud, F., Menut, P., Hasbani, F., Di Gilio, T., Lecocq, C., Roy, T., Chhabra, A., Grover, C., Minez, O., Uginet, J., Durieu, G., Nyer, F., Adobati, C., Wilson, R., Casalotto, D.

“…This paper presents the implementation details and silicon results of a 2.6GHz dual-core ARM Cortex A9 manufactured in a 28nm Ultra-Thin Body and BOX FD-SOI…”
Get full text

2.6GHz ultra-wide voltage range energy efficient dual A9 in 28nm UTBB FD-SOI by Jacquet, D., Cesana, G., Flatresse, P., Arnaud, F., Menut, P., Hasbani, F., Di Gilio, T., Lecocq, C., Roy, T., Chhabra, A., Grover, C., Minez, O., Uginet, J., Durieu, G., Nyer, F., Adobati, C., Wilson, R., Casalotto, D.

“…This paper presents the implementation details and silicon results of a 2.6GHz dual-core ARM Cortex A9 manufactured in a 28nm Ultra-Thin Body and BOX FD-SOI…”
Get full text

A functional 0.69 /spl mu/m/sup 2/ embedded 6T-SRAM bit cell for 65 nm CMOS platform by Arnaud, F., Boeuf, F., Salvetti, F., Lenoble, D., Wacquant, F., Regnier, C., Morin, P., Emonet, N., Denis, E., Oberlin, J.C., Ceccarelli, D., Vannier, P., Imbert, G., Sicard, A., Perrot, C., Belmont, O., Guilmeau, I., Sassoulas, P.O., Delmedico, S., Palla, R., Leverd, F., Beverina, A., DeJonghe, V., Broekaart, M., Pain, L., Todeschini, J., Charpin, M., Laplanche, Y., Neira, D., Vachellerie, V., Borot, B., Devoivre, T., Bicais, N., Hinschberger, B., Pantel, R., Revil, N., Parthasarathy, C., Planes, N., Brut, H., Farkas, J., Uginet, J., Stolk, P., Woo, M.

“…This work highlights a 65 nm CMOS technology platform for low power and general-purpose applications. A 6-T SRAM cell size of 0.69 /spl mu/m/sup 2/ with a 45…”
Get full text