Search Results - "Uchibori, C J"
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InxGa1-xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier
Published in Journal of electronic materials (01-04-1997)“…Significant reduction of the contact resistance of In0.7Ga0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by…”
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InxGa1-xAs ohmic contacts to n-type GaAs prepared by sputter deposition
Published in Journal of electronic materials (01-04-1995)Get full text
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3
SEILA: Soft error immune latch for mitigating multi-node-SEU and local-clock-SET
Published in 2010 IEEE International Reliability Physics Symposium (01-01-2010)“…We have developed a robust latch for achieving high reliability in LSI. The latch can attenuate multi-node single-event-upset (MNSEU) and single event…”
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Direct Attach of Photonic Components on Substrates With Optical Interconnects
Published in IEEE photonics technology letters (15-04-2007)“…Direct attach of lasers and photodiodes on boards with optical interconnects can facilitate high-density packaging of high-speed optical components. For the…”
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5
Thermal stress analysis of FCBGA during cooling under reflow process
Published in 2010 IEEE CPMT Symposium Japan (01-08-2010)“…Thermal stresses in Flip Chip Ball Grid Array (FCBGA) generated by the Chip Package Interaction (CPI) while cooling during the reflow process were calculated…”
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Conference Proceeding -
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Formation mechanism of In sub(x)Ga sub(1-x)As ohmic contacts to n-type GaAs prepared by radio frequency sputtering
Published in Journal of electronic materials (01-01-1994)“…The formation mechanisms of InAs/Ni/W ohmic contacts to n-type GaAs prepared by radio-frequency (rf) sputtering were studied by measuring contact resistances…”
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Formation mechanism of InxGa1-x ohmic contacts to n-type GaAs prepared by radio frequency sputtering
Published in Journal of electronic materials (1994)Get full text
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8
InxGa1-xAs-based Ohmic contacts to n-type GaAs with W-nitride barrier prepared by radio frequency sputtering
Published in Applied surface science (1997)Get full text
Conference Proceeding -
9
Formation of WSi-based ohmic contacts to n-type GaAs
Published in Thin solid films (28-05-1997)“…An outcome of the indirect doping concept conceived recently in NiGe-based Ohmic contacts has led to the development of annealed WSi-based Ohmic contacts to…”
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10
Formation mechanism of InxGa1−xAs ohmic contacts to n-type GaAs prepared by radio frequency sputtering
Published in Journal of electronic materials (01-09-1994)Get full text
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11
In situ x-ray photoelectron spectroscopy measurement during Ta deposition on low- k dielectric SiLK
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-07-2003)“…The bonding energy of Ta and C was measured by in situ x-ray photoelectron spectroscopy during sequential tantalum (Ta) deposition on low- k SiLK™. A tantalum…”
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