Search Results - "Uccelli, E."

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects by Zardo, I., Conesa-Boj, S., Peiro, F., Morante, J. R., Arbiol, J., Uccelli, E., Abstreiter, G., Fontcuberta i Morral, A.

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Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy by Corfdir, P., Van Hattem, B., Uccelli, E., Fontcuberta i Morral, A., Phillips, R. T.

“…We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong…”
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Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates by Czornomaz, L., Uccelli, E., Sousa, M., Deshpande, V., Djara, V., Caimi, D., Rossell, M. D., Erni, R., Fompeyrine, J.

“…We report on the first demonstration of the CMOS-compatible integration of high-quality InGaAs on insulator (InGaAs-OI) on Si substrates by a novel concept…”
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Towards large size substrates for III-V co-integration made by direct wafer bonding on Si by Daix, N., Uccelli, E., Czornomaz, L., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Shiu, K.-T., Cheng, C.-W., Krishnan, M., Lofaro, M., Kobayashi, M., Sadana, D., Fompeyrine, J.

“…We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V…”
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Strain relaxation of GaAs/Ge crystals on patterned Si substrates by Taboada, A. G., Kreiliger, T., Falub, C. V., Isa, F., Salvalaglio, M., Wewior, L., Fuster, D., Richter, M., Uccelli, E., Niedermann, P., Neels, A., Mancarella, F., Alén, B., Miglio, L., Dommann, A., Isella, G., von Känel, H.

“…We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice…”
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An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch by Djara, V., Deshpande, V., Uccelli, E., Daix, N., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Shiu, K.-T, Weng, C.-W, Krishnan, M., Lofaro, M., Steiner, R., Sadana, D., Lubyshev, D., Liu, A., Czornomaz, L., Fompeyrine, J.

“…We report on the first demonstration of ultra-thin body (50 nm), low defectivity 200 mm InGaAs-on-insulator (-OI) fabricated by direct wafer bonding technique…”
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A level set simulation for ordering of quantum dots via cleaved-edge overgrowth by Niu, X. B., Uccelli, E., Fontcuberta i Morral, A., Ratsch, C.

“…Cleaved-edge overgrowth (CEO) is a promising technique to obtain ordered arrays of quantum dots, where the size and position of the dots can be controlled very…”
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Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars by Richter, M., Uccelli, E., Taboada, A.G., Caimi, D., Daix, N., Sousa, M., Marchiori, C., Siegwart, H., Falub, C.V., von Känel, H., Isa, F., Isella, G., Pezous, A., Dommann, A., Niedermann, P., Fompeyrine, J.

“…(In,Ga)As/GaAs quantum wells were heterogeneously integrated on planar and patterned Ge/Si (001) substrates by molecular beam epitaxy. Both nominal and vicinal…”
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Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs by Bauer, J., Schuh, D., Uccelli, E., Schulz, R., Kress, A., Hofbauer, F., Finley, J. J., Abstreiter, G.

“…We report on a promising approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of…”
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Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires by Graham, A. M., Corfdir, P., Heiss, M., Conesa-Boj, S., Uccelli, E., Fontcuberta i Morral, A., Phillips, R. T.

“…We investigate the emission properties of excitons in GaAs nanowires containing quantum disks formed by structural alternation between the zinc-blende and…”
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Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon by Czornomaz, L., Daix, N., Kerber, P., Lister, K., Caimi, D., Rossel, C., Sousa, M., Uccelli, E., Fompeyrine, J.

“…In this work, we show for the first time that VLSI-like gate-first self-aligned InGaAs MOSFETs on insulator on Si featuring raised source/drain (SID) can be…”
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Co-integrating high mobility channels for future CMOS, from substrate to circuits by Czornomaz, L., Daix, N., Uccelli, E., Caimi, D., Sousa, M., Rossel, C., Siegwart, H., Marchiori, C., Fompeyrine, J.

“…Direct wafer bonding can be a vehicle for the dense co-integration of co-planar nano-scaled SiGe p-FETs and InGaAs n-FETs. Like for SiGe, direct wafer bonding…”
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Controlled positioning of self-assembled InAs quantum dots on (1 1 0) GaAs by Schuh, D., Bauer, J., Uccelli, E., Schulz, R., Kress, A., Hofbauer, F., Finley, J.J., Abstreiter, G.

“…We report on a new approach for positioning of self-assembled InAs quantum dots on (1 1 0) GaAs with nanometer precision. By combining self-assembly of quantum…”
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Compensation mechanism in silicon-doped gallium arsenide nanowires by Ketterer, B., Mikheev, E., Uccelli, E., Fontcuberta i Morral, A.

“…P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local…”
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Growth mechanisms of self-assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets by Uccelli, E., Nürnberger, S., Bichler, M., Abstreiter, G., Fontcuberta i Morral, A.

“…The mechanism of selective epitaxial growth of InAs quantum dots on (110) AlAs/GaAs cleaved facets has been considered from a theoretical point of view. In…”
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Fabrication and analysis of vertical p-type InAs-Si nanowire Tunnel FETs by Cutaia, D., Moselund, K. E., Borg, M., Schmid, H., Gignac, L., Breslin, C. M., Karg, S., Uccelli, E., Nirmalraj, P., Riel, H.

“…We report InAs-Si nanowire (NW) Tunnel FETs fabricated inside nanotube templates. High device yield and performances are obtained by optimizing the growth…”
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Efficacy of hormone replacement therapy in postmenopausal women with oral discomfort by Forabosco, A, Criscuolo, M, Coukos, G, Uccelli, E, Weinstein, R, Spinato, S, Botticelli, A, Volpe, A

“…The increase in incidence of oral discomfort among women in a menopause is probably due to hormone modifications. This study evaluated the efficacy of hormone…”
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III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS by Uccelli, E., Daix, N., Czornomaz, L., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Fompeyrine, J.

“…As Si-CMOS scaling has become increasingly challenging, III-V compound semiconductors such as In x Ga 1-x As (x≥0.53) (InGaAs) are receiving much interest as…”
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Follicular fluid lipoproteins in preovulatory period and their relationship with follicular maturation and progesterone production by human granulosa-luteal cells in vivo and in vitro by VOLPE, A, COUKOS, G, UCCELLI, E, DROGHINI, F, ADAMO, R, ARTINI, P. G

“…Follicular fluid (FF) lipoprotein content was evaluated in an in vitro fertilization/embryo transfer and gamete--intrafallopian--transfer program and…”
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Electrical characterisation of InGaAs on insulator structures by Cherkaoui, K., Gomeniuk, Y.Y., Daix, N., O’Brien, J., Blake, A., Thomas, K.K., Pelucchi, E., O’Connell, D., Sheehan, B., Monaghan, S., Caimi, D., Czornomaz, L., Uccelli, E., Hurley, P.K.

“…The electrical properties of Au/Ni/In sub(0.53)Ga sub(0.47)As/Al sub(2)O sub(3)/SiO sub(2)/Si structures were investigated using capacitance voltage (C-V)…”
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