Search Results - "UENO, Kohei"

Autonomous growth of NbN nanostructures on atomically flat AlN surfaces by Kobayashi, Atsushi, Ueno, Kohei, Fujioka, Hiroshi

“…Integrating the functions of superconductors and semiconductors by epitaxial growth can lead to the fabrication of quantum devices such as on-chip quantum…”
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Preparation of degenerate n-type AlxGa1−xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition by Nishikawa, Yuto, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…Highly conductive AlGaN alloys hold a great technological potential, wherein the degenerate n-type doping is key in reducing parasitic resistances in…”
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Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering by Nishikawa, Yuto, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…This study reports on the epitaxial growth of heavily Sn-doped GaN films by pulsed sputtering deposition (PSD) and their basic characteristics, which include…”
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Electrical properties of Si-doped GaN prepared using pulsed sputtering by Arakawa, Yasuaki, Ueno, Kohei, Imabeppu, Hideyuki, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi

“…In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition…”
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Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K by Aoyama, Kohei, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…We have fabricated vertical p-type gallium nitride (GaN) Schottky barrier diodes (SBDs) using various Schottky metals such as Pt, Pd, Ni, Mo, Ti, and Al…”
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Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics by Ueno, Kohei, Shibahara, Keita, Kobayashi, Atsushi, Fujioka, Hiroshi

“…We demonstrate herein the fabrication and operation of p-type GaN Schottky barrier diodes (SBDs) with nearly ideal rectifying characteristics using vertical…”
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Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes by Fudetani, Taiga, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…We report the characteristics of heavily Si-doped GaN prepared by pulsed sputtering deposition (PSD) and its application as tunneling junction (TJ) contacts…”
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Dopamine activity in projection neurons regulates short‐lasting olfactory approach memory in Drosophila by Naganos, Shintaro, Ueno, Kohei, Horiuchi, Junjiro, Saitoe, Minoru

“…Survival in many animals requires the ability to associate certain cues with danger and others with safety. In a Drosophila melanogaster aversive olfactory…”
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Wide range doping controllability of p-type GaN films prepared via pulsed sputtering by Fudetani, Taiga, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…The growth of Mg-doped GaN over a wide doping range is demonstrated via pulsed sputtering deposition (PSD). All samples show p-type conductivity without any…”
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Reduction of Twin Boundary in NbN Films Grown on Annealed AlN by Kihira, Shunya, Kobayashi, Atsushi, Ueno, Kohei, Fujioka, Hiroshi

“…Superconducting nanowire single-photon detectors (SNSPDs) based on ultrathin niobium nitride (NbN) films have attracted much attention owing to their high…”
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Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition by Ueno, Kohei, Taiga, Fudetani, Kobayashi, Atsushi, Fujioka, Hiroshi

“…We have characterized highly conductive Si-doped GaN films with a high electron mobility of 112 cm 2 V −1 s −1 at an electron concentration of 2.9 × 10 20  cm…”
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Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates by Kobayashi, Atsushi, Ueno, Kohei, Fujioka, Hiroshi

“…•An ultrathin NbN film on AlN exhibits a step-and-terrace structure on the surface.•The NbN exhibited distinct streaky RHEED patterns and reasonable XRD…”
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Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications by Maeda, Ryota, Ueno, Kohei, Fujioka, Hiroshi

“…This study describes the selective formation process of highly degenerate n-type GaN (d-GaN) ohmic contacts for the source and drain regions of GaN high…”
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Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering by Shon, Jeong Woo, Ohta, Jitsuo, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However,…”
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Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN by Ma, Bei, Tang, Mingchuan, Ueno, Kohei, Kobayashi, Atsushi, Morita, Ken, Fujioka, Hiroshi, Ishitani, Yoshihiro

“…Heavily Si-doped GaN layers grown by pulsed sputtering deposition (PSD) on Fe-doped GaN/Al2O3 templates are investigated using infrared reflectance and…”
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Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique by Nakamura, Eiji, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi, Oshima, Masaharu

“…P-type doping of GaN by pulsed sputtering deposition (PSD) at a low growth temperature of 480 °C and dramatic reduction in the growth process temperature for…”
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Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering by Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…We have grown structurally high-quality GaN with a low residual shallow donor concentration (<5 × 1015 cm−3) through pulsed sputtering. Light Si doping to this…”
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Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering by Kobayashi, Atsushi, Honda, Yoshio, Maeda, Takuya, Okuda, Tomoya, Ueno, Kohei, Fujioka, Hiroshi

“…ScAlN has garnered substantial attention for its robust piezoelectric and ferroelectric properties, holding promise for diverse electronic device applications…”
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Modified side overlap esophagogastrostomy after laparoscopic proximal gastrectomy by Yamashita, Yoshito, Tatsubayashi, Taichi, Okumura, Koichi, Miyamoto, Takumi, Ueno, Kohei

“…We report a new method of esophagogastrostomy after proximal gastrectomy, side overlap with fundoplication by Yamashita (SOFY) in 2017. Recently, even better…”
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Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels by Morikawa, Soichiro, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi

“…Micro-LEDs have been attracting attention as a potential candidate for the next generation of display technology. Here we demonstrate the feasibility of…”
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