Search Results - "Tzou, Jerry"

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs by Langpoklakpam, Catherine, Liu, An-Chen, You, Neng-Jie, Kao, Ming-Hsuan, Huang, Wen-Hsien, Shen, Chang-Hong, Tzou, Jerry, Kuo, Hao-Chung, Shieh, Jia-Min

“…In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was…”
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The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure by Ho, Wen-Chieh, Liu, Yao-Hsing, Wu, Wen-Hsuan, Huang Chen, Sung-Wen, Tzou, Jerry, Kuo, Hao-Chung, Sun, Chia-Wei

“…In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to…”
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Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure by Chen, Sung-Wen Huang, Yang, De-Ren, You, Neng-Jie, Ho, Wen-Chieh, Tzou, Jerry, Kuo, Hao-Chung, Shieh, Jia-Min

“…In this paper, we report a 1.84 kV GaN-on-GaN Schottky barrier diode (SBD) corresponds to a low on-resistance of 1.98 mΩ-cm 2 . The GaN epi-layer was etched to…”
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Heterogeneous System-Level Package Integration — Trends and Challenges by Lee, Frank J. C., Wong, Mei, Tzou, Jerry, Yuan, Jonathan, Chang, Daniel, Rusu, Stefan

“…Heterogeneous package-level integration plays an increasing role in higher functional density and lower power processors for general computing, machine…”
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Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications by Godfrey, D., Nirmal, D., Godwinraj, D., Arivazhagan, L., MohanKumar, N., Tzou, Jerry, Yeh, Wen-Kuan

“…AlGaN/GaN-HEMT with Single to Multi-step gate field plate is proposed in this work. The proposed device enhanced Drain current, breakdown voltage and shift in…”
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Device Characteristics of E-mode GaN HEMTs with a Second Gate Connected to the Source by Chen, Chih-Wei, Ho, Wei-Chen, Hsin, Yue-Ming, Tzou, Jerry, Huang, Wen-Hsien, Shen, Chang-Hong, Shieh, Jia-Ming, Yeh, Wen-Kuan, Hsu, Wen-Ta, Liu, Sze-Ching

“…In this study, the device characteristics of dual-gate GaN high-electron-mobility transistors (HEMTs) were determined. The research investigated an…”
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Digital Multi-Value Logic Gates for Monolithic GaN Power ICs by Wang, Mengqi, Wai Tung, Ng, Tzou, Jerry, Huang, Wen-Hsien, Shen, Chang-Hong, Shieh, Jia-Ming, Yeh, Wen-Kuan

“…In this work we propose a first attempt in the fabrication of a family of monolithic GaN-based quaternary multi-value logic gates (MVL), including QNOT, QNOR,…”
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