Search Results - "Tzintzarov, George N"
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Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs
Published in IEEE transactions on nuclear science (01-01-2017)“…Silicon-germanium heterojunction bipolar transistor (SiGe HBT) models are used in technology computer aided design (TCAD) to investigate single event…”
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2
High Responsivity Ge Phototransistor in Commercial CMOS Si-Photonics Platform for Monolithic Optoelectronic Receivers
Published in IEEE electron device letters (01-02-2021)“…A high-gain phototransistor (PT) is demonstrated on a commercial 90-nm CMOS Si-photonics platform. The Gummel and output characteristics, the gain, and the…”
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3
A Comparison of Total-Ionizing-Dose Effects in Silicon and Silicon-Nitride Waveguides
Published in IEEE transactions on nuclear science (01-08-2024)“…The total-ionizing-dose (TID) responses of silicon and low-loss silicon-nitride (SiN) integrated waveguides are evaluated. Mach-Zehnder interferometers (MZIs),…”
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4
Single-Event Transients in a Commercially Available, Integrated Germanium Photodiode for Silicon Photonic Systems
Published in IEEE transactions on nuclear science (01-03-2022)“…Ion-induced SETs were captured from a germanium photodiode (PD) in an integrated silicon photonics technology platform. Statistics from 400 ion-strike events…”
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5
The Propagation of Extended SET Tails in RF Amplifiers Using 45-nm CMOS on PDSOI
Published in IEEE transactions on nuclear science (01-08-2023)“…The propagation of long-duration single-event transient (SET) tails in radio-frequency (RF) amplifiers implemented with silicon-on-insulator (SOI)…”
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6
Direct Measurement of Total-Ionizing-Dose-Induced Phase Shifts in Commercially Available, Integrated Silicon-Photonic Waveguides
Published in IEEE transactions on nuclear science (01-08-2023)“…In this work, integrated silicon photonic waveguides are exposed to ionizing radiation. A micro-beam X-ray source was utilized to deliver an isolated dose to a…”
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7
Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption
Published in IEEE transactions on nuclear science (01-05-2021)“…Optical single-event transients (OSETs) were measured for the first time in integrated silicon-photonic waveguides. A custom test fixture and novel…”
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8
The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs
Published in IEEE transactions on nuclear science (01-08-2023)“…The impact of carbon doping on the single-event transient (SET) response of SiGe HBTs was evaluated using pulsed-laser charge generation via two-photon…”
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9
Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications
Published in IEEE transactions on nuclear science (01-04-2023)“…To support the use of SiGe BiCMOS for future mission targets such as Europa, which are subject to high radiation doses and cryogenic temperatures, SiGe…”
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10
New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles
Published in IEEE transactions on nuclear science (01-01-2020)“…A novel approach for two-photon absorption (TPA) pulsed-laser testing produces extended charge deposition profiles that are analogous to those produced by…”
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11
Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics
Published in Optics express (23-12-2019)“…Pulsed-laser testing is an attractive tool for studying space-based radiation effects in microelectronics because it provides a high degree of spatial…”
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12
Variability in Total-Ionizing-Dose Response of Fourth-Generation SiGe HBTs
Published in IEEE transactions on nuclear science (01-05-2021)“…Statistical analysis is performed on the totalionizing-dose (TID) response of fourth-generation silicon-germanium heterojunction bipolar transistors, revealing…”
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13
Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage
Published in IEEE transactions on nuclear science (01-01-2020)“…The effects of 14-MeV neutron displacement damage (DD) on waveguide (WG)-integrated germanium-on-silicon p-i-n photodiodes (PDs) for silicon photonics have…”
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14
Using Machine Learning to Mitigate Single-Event Upsets in RF Circuits and Systems
Published in IEEE transactions on nuclear science (01-03-2022)“…The present article applies the <inline-formula> <tex-math notation="LaTeX">k </tex-math></inline-formula>-nearest neighbors (<inline-formula> <tex-math…”
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15
Integrated Silicon Photonics for Enabling Next-Generation Space Systems
Published in Photonics (01-04-2021)“…A review of silicon photonics for space applications is presented. The benefits and advantages of size, weight, power, and cost (SWaP-C) metrics inherent to…”
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16
Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI
Published in IEEE transactions on nuclear science (01-01-2020)“…A comparison of heavy-ion-induced single-event transients (SETs) in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) fabricated on both bulk…”
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17
Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs
Published in IEEE transactions on nuclear science (01-01-2019)“…An approach for determining the optimal laser parameters (i.e., pulse energy, focused spot size, wavelength, and pulse duration) for correlating single-event…”
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18
Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform
Published in IEEE transactions on nuclear science (01-07-2020)“…Low-noise amplifiers (LNAs) are necessary components for any communications system. Single-event transients (SETs) induced by energetic particles in space can…”
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19
Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform
Published in IEEE transactions on nuclear science (01-01-2019)“…Silicon waveguide (WG) integrated p-i-n germanium photodiodes (PDs) from a monolithic electronic-photonic integrated circuit technology were exposed to…”
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20
Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam
Published in IEEE transactions on nuclear science (01-01-2020)“…This article presents an experimental study of single-event transients (SETs) induced by pulsed X-rays in SiGe heterojunction bipolar transistors (HBTs)…”
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