Search Results - "Tzanetakis, P."

Tailoring the wetting response of silicon surfaces via fs laser structuring by Zorba, V., Stratakis, E., Barberoglou, M., Spanakis, E., Tzanetakis, P., Fotakis, C.

“…Control over the wettability of solids and manufacturing of functional surfaces with special hydrophobic and self-cleaning properties has aroused great…”
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Bio-inspired water repellent surfaces produced by ultrafast laser structuring of silicon by Barberoglou, M., Zorba, V., Stratakis, E., Spanakis, E., Tzanetakis, P., Anastasiadis, S.H., Fotakis, C.

“…We report here an efficient method for preparing stable superhydrophobic and highly water repellent surfaces by irradiating silicon wafers with femtosecond…”
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Metastable volume changes of hydrogenated amorphous silicon and silicon–germanium alloys produced by exposure to light by Tzanetakis, P

“…Exposure of hydrogenated amorphous silicon, a-Si:H, to light produces large-scale structural changes and increases the density of dangling Si bond defects…”
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Silicon electron emitters fabricated by ultraviolet laser pulses by Zorba, V., Tzanetakis, P., Fotakis, C., Spanakis, E., Stratakis, E., Papazoglou, D. G., Zergioti, I.

“…In this letter we consider the effect of laser pulse duration on the surface morphology and the field emission properties of silicon structured by UV laser…”
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Temporal pulse manipulation and ion generation in ultrafast laser ablation of silicon by Spyridaki, M., Koudoumas, E., Tzanetakis, P., Fotakis, C., Stoian, R., Rosenfeld, A., Hertel, I. V.

“…The possibility of phase manipulation and temporal tailoring of ultrashort laser pulses provides new opportunities for optimal processing of materials. An…”
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Explicit empirical relation for the monthly average cell-temperature performance ratio of photovoltaic arrays by Franghiadakis, Y., Tzanetakis, P.

“…An empirical relation is derived that allows accurate estimates of the influence of cell temperature variations on the output of a photovoltaic array. Monthly…”
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Energy distribution of ions produced by excimer-laser ablation of solid and molten targets by FRANGHIADAKIS, Y, FOTAKIS, C, TZANETAKIS, P

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Metastable photoexpansion of hydrogenated amorphous silicon produced by exposure to short laser pulses by Spanakis, E., Stratakis, E., Tzanetakis, P.

“…The study of the metastable expansion of hydrogenated amorphous silicon after exposure to nanosecond laser pulses as well as to cw light of similar average…”
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Optimization of ultrafast laser generated low-energy ion beams from silicon targets by Stoian, R., Mermillod-Blondin, A., Bulgakova, N. M., Rosenfeld, A., Hertel, I. V., Spyridaki, M., Koudoumas, E., Tzanetakis, P., Fotakis, C.

“…We demonstrate the possibility to manipulate the kinetic properties of ion beams generated by ultrafast laser ablation of silicon. The versatility in…”
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Photoinduced stress in hydrogenated amorphous silicon films by Stratakis, E., Spanakis, E., Tzanetakis, P., Fritzsche, H., Guha, S., Yang, J.

“…Photo-induced compressive stress ΔS in hydrogenated amorphous silicon (a-Si:H) has been studied using films deposited by plasma-enhanced or hot-wire chemical…”
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Influence of pulse temporal manipulation on the properties of laser ablated Si ion beams by Koudoumas, E., Spyridaki, M., Stoian, R., Rosenfeld, A., Tzanetakis, P., Hertel, I.V., Fotakis, C.

“…Experimental results are reported describing the influence of laser pulse temporal manipulation on the properties of ion beams generated by ultrafast laser…”
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Stress and internal friction associated with light-induced structural changes of a-Si:H deposited on crystalline silicon microcantilevers by Stratakis, E, Spanakis, E, Fritzsche, H, Tzanetakis, P

“…The study of light-induced changes of the mechanical properties of a-Si:H should be valuable in the search for the microscopic mechanisms behind the…”
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Light induced stress in a-Si1−xGex:H alloys and its correlation with the Staebler–Wronski effect by Spanakis, E., Stratakis, E., Tzanetakis, P., Fritzsche, H., Guha, S., Yang, J.

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Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements by Grabowski, A, Nowak, M, Tzanetakis, P

“…The non-linear dependence of photoconductivity (PC) on wavelength and intensity of illumination was used to evaluate the lifetime and quantum efficiency…”
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Space charges resulting from photocurrents exceeding the thermionic emission currents in a-Si:H by Spanakis, E, Stratakis, E, Kopidakis, N, Tzanetakis, P, Fritzsche, H

“…When the photocurrent exceeds the thermionic emission current of electrons and holes, a photoconductor cannot remain neutral. A positive space charge appears…”
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Correlation of the structural and optical properties of GaN grown on vicinal (0 0 1) GaAs substrates with the plasma-assisted MBE growth conditions by Georgakilas, A, Amimer, K, Tzanetakis, P, Hatzopoulos, Z, Cengher, M, Pecz, B, Czigany, Zs, Toth, L, Baidakova, M.V, Sakharov, A.V, Davydov, V.Yu

“…Molecular beam epitaxy, using a radio frequency nitrogen plasma source, was investigated for the direct growth of GaN thin films on vicinal (0 0 1) GaAs…”
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Contact limitation of secondary photoconductivity in intrinsic a-Si:H by Kopidakis, N, Tzanetakis, P, Stradins, P, Fritzsche, H

“…A requirement for secondary photoconductivity is that the supply of current by the contacts is sufficient to keep the photoconductor neutral. This requirement…”
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Evaluation of performance capabilities of emitters and detectors based on a common MQW structure by Cengher, D., Aperathitis, E., Androulidaki, M., Deligeorgis, G., Kayambaki, M., Michelakis, K., Hatzopoulos, Z., Tzanetakis, P., Georgakilas, A.

“…Photodetectors (PDs) based on three separate confinement-multiple quantum well (SCH–MQW) structures (with 2, 4 and 8 QWs) and six graded-index (GRIN) SCH–MQW…”
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Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires by Eftychis, S., Kruse, J., Koukoula, T., Kehagias, Th, Komninou, Ph, Adikimenakis, A., Tsagaraki, K., Androulidaki, M., Tzanetakis, P., Iliopoulos, E., Georgakilas, A.

“…The effects of an amorphous interfacial silicon nitride (SiXNY) layer on the morphology, structure and optoelectronic properties of GaN nanowires (NWs), grown…”
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Short-laser-pulse and steady-light induced degradation of intrinsic, p-type and compensated a-Si:H by Tzanetakis, P., Kopidakis, N., Androulidaki, M., Kalpouzos, C., Stradins, P., Fritzsche, H.

“…Degradation of the same hydrogenated amorphous silicon (a:Si:H) samples with short laser pulses (30 ns) and steady bandgap light (CW) reveals that the kinetics…”
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