Search Results - "Turos, A."

On the mechanism of damage buildup in gallium nitride by Turos, A.

“…Damage buildup and defect transformations in ion bombarded in GaN have been studied by the complementary use of Rutherford backscattering…”
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Ion channeling study of defects in compound crystals using Monte Carlo simulations by Turos, A., Jozwik, P., Nowicki, L., Sathish, N.

“…Ion channeling is a well-established technique for determination of structural properties of crystalline materials. Defect depth profiles have been usually…”
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Surface free energy of ultra-high molecular weight polyethylene modified by electron and gamma irradiation by Abdul-Kader, A.M., Turos, A., Radwan, R.M., Kelany, A.M.

“…Surface free energy of biocompatible polymers is important factor which affects the surface properties such as wetting, adhesion and biocompatibility. In the…”
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Modern analysis of ion channeling data by Monte Carlo simulations by Nowicki, Lech, Turos, Andrzej, Ratajczak, Renata, Stonert, Anna, Garrido, Frederico

“…Basic scheme of ion channeling spectra Monte Carlo simulation is reformulated in terms of statistical sampling. The McChasy simulation code is described and…”
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Monte Carlo simulations of backscattering process in dislocation-containing SrTiO3 single crystal by Jozwik, P., Sathish, N., Nowicki, L., Jagielski, J., Turos, A., Kovarik, L., Arey, B.

“…Studies of defects formation in crystals are of obvious importance in electronics, nuclear engineering and other disciplines where materials are exposed to…”
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Ion implantation for surface modification of biomaterials by Jagielski, J., Piatkowska, A., Aubert, P., Thomé, L., Turos, A., Abdul Kader, A.

“…Materials used in medicine should fulfill several strict conditions primarily imposed by biological restrictions: absence of harmful interactions with body…”
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Effects of swift heavy ion irradiation on band gap of strained AlGaN/GaN Multi Quantum Wells by Devaraju, G., Sathish, N., Pathak, A.P., Turos, A., Bazzan, M., Trave, E., Mazzoldi, P., Arora, B.M.

“…III-Nitrides have attracted much attention due to their versatile and wide range of applications, such as blue/UV light emitting diodes. Strained layer super…”
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X-ray study of gadolinium gallium garnet epitaxial layers containing divalent Co ions by Mazur, K., Sarnecki, J., Borysiuk, J., Wierzchowski, W., Wieteska, K., Turos, A.

“…Structural perfection of gadolinium gallium garnet (GGG; Gd 3Ga 5O 12) epitaxial layers with incorporated divalent Co ions has been studied by means of high…”
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Ion implantation of the 4H SiC epitaxial layers and substrates with 2MeV Se+ and 1MeV Al+ ions by Wierzchowski, W, Turos, A, Wieteska, K, Stonert, A, Ratajczak, R, Jowik, P, Wilhelm, R, Akhamadaliev, S, Mazur, K, Paulmann, C

“…The implantations were performed in 4H silicon carbide homoepitaxial layers deposited on (00.1) substrates with 8° offcut, and reference 4H-SiC substrates. The…”
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Modification of UHMWPE by ion, electron and γ-ray irradiation by Turos, A., Abdul-Kader, A.M., Ratajczak, R., Stonert, A.

“…Due to good wear resistance Ultrahigh Molecular Weight Polyethylene (UHMWPE) is the material of choice for the load bearing surfaces of total joint implants…”
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Ion beam analysis of ancient Egyptian wall paintings by El Aal, Shaaban Abd, Korman, A., Stonert, A., Munnik, F., Turos, A.

“…Polychromatic decorations of ancient Egyptians tombs and temples have a long tradition over three millennia but are hard to identify because many pigments have…”
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Compositional dependence of damage buildup in Ar-ion bombarded AlGaN by Pągowska, K., Ratajczak, R., Stonert, A., Nowicki, L., Turos, A.

“…Results are presented for the RBS/channeling study of the structural defect behavior in ion bombarded Al x Ga 1 − x N (for x = 0; x = 0.44; x = 1) compounds at…”
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RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN by Pągowska, K., Ratajczak, R., Stonert, A., Turos, A., Nowicki, L., Sathish, N., Jóźwik, P., Muecklich, A.

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Defect studies in ion irradiated AlGaN by Jagielski, J., Thomé, L., Zhang, Y., Wang, C.M., Turos, A., Nowicki, L., Pagowska, K., Jozwik, I.

“…Defects created in Al 0.4Ga 0.6N crystals by 320 keV Ar ion irradiation were studied using Rutherford Backscattering Spectroscopy/Channeling (RBS/C) and…”
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Compositional transformations in ion implanted polymers by Abdul-Kader, A.M., Turos, A., Grambole, D., Jagielski, J., Piątkowska, A., Madi, N.K., Al-Maadeed, M.

“…Changes of surface layer composition produced by ion bombardment of polyethylene and polypropylene samples were studied. These materials are under…”
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Positron annihilation and ion beam analysis of ion-bombardment-induced hydrogen release and oxidation of ultra high molecular weight polyethylene by Al-Qaradawi, I.Y., Madi, N.K., Turos, A., Abdul-Kader, A.M.

“…Ultra high molecular weight polyethylene was bombarded with He + and Ar + ions to fluences ranging from 10 13 to 2×10 16 ions/cm 2. Rutherford backscattering…”
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Ion irradiation of ceramic oxides: Disorder production and mechanical properties by Jagielski, J., Thomé, L., Nowicki, L., Turos, A., Gentils, A., Garrido, F., Piatkowska, A., Aubert, P.

“…This paper presents the effects produced by ion irradiation in selected ceramic oxides. In the first part radiation damage accumulation in crystals irradiated…”
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Surface layer modification of ion bombarded HDPE by Bielinski, D., Lipinski, P., Slusarski, L., Grams, J., Paryjczak, T., Jagielski, J., Turos, A., Madi, N.K.

“…Press-moulded, high density polyethylene (HDPE) samples were subjected to ion bombardment and effects of the modification studied. He + ions of energy 100 keV…”
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Determination of In concentration in InGaAs/GaAs 001 epilayers in the early stage of anisotropic stress relaxation by SASS, J, MAZUR, K, EICHHORN, F, STRUPINSKI, W, TUROS, A, SCHELL, N

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Ta–Si contacts to n-SiC for high temperatures devices by Guziewicz, M., Piotrowska, A., Kaminska, E., Grasza, K., Diduszko, R., Stonert, A., Turos, A., Sochacki, M., Szmidt, J.

“…The properties of Ta–Si contact to n-SiC have been investigated by complementary use of 2 MeV He + Rutherford backscattering spectroscopy and X-ray diffraction…”
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