Search Results - "Tuominen, Marko"

Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition by Perkins, Charles M., Triplett, Baylor B., McIntyre, Paul C., Saraswat, Krishna C., Haukka, Suvi, Tuominen, Marko

“…Structural and electrical properties of gate stack structures containing ZrO2 dielectrics were investigated. The ZrO2 films were deposited by atomic layer…”
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Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride (NbF5) and Carbon Tetrachloride (CCl4): A Combined Experimental and Density Functional Theory Study of the Etch Mechanism by Sharma, Varun, Elliott, Simon D, Blomberg, Tom, Haukka, Suvi, Givens, Michael E, Tuominen, Marko, Ritala, Mikko

“…Thermal atomic layer etching (ALEt) of amorphous Al2O3 was performed by alternate exposures of niobium pentafluoride (NbF5) and carbon tetrachloride (CCl4)…”
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Thermal gas-phase etching of titanium nitride (TiN) by thionyl chloride (SOCl2) by Sharma, Varun, Blomberg, Tom, Haukka, Suvi, Cembella, Shaun, Givens, Michael E., Tuominen, Marko, Odedra, Rajesh, Graff, Wes, Ritala, Mikko

“…[Display omitted] •A novel dry non-plasma etching process for titanium nitride (TiN) is demonstrated.•SOCl2 etches TiN selectively over Al2O3, SiO2, and Si3N4…”
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Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon by Kilpi, Lauri, Ylivaara, Oili M. E., Vaajoki, Antti, Malm, Jari, Sintonen, Sakari, Tuominen, Marko, Puurunen, Riikka L., Ronkainen, Helena

“…The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of…”
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Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF 5 and CCl 4 , or CCl 4 Only by Sharma, Varun, Kondati Natarajan, Suresh, Elliott, Simon D., Blomberg, Tom, Haukka, Suvi, Givens, Michael E., Tuominen, Marko, Ritala, Mikko

“…Abstract Thermally activated chemical vapor‐phase etching of titanium nitride (TiN) is studied by utilizing either alternate exposures of niobium pentafluoride…”
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Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF5 and CCl4, or CCl4 Only by Sharma, Varun, Kondati Natarajan, Suresh, Elliott, Simon D., Blomberg, Tom, Haukka, Suvi, Givens, Michael E., Tuominen, Marko, Ritala, Mikko

“…Thermally activated chemical vapor‐phase etching of titanium nitride (TiN) is studied by utilizing either alternate exposures of niobium pentafluoride (NbF5)…”
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Tribological properties of thin films made by atomic layer deposition sliding against silicon by Kilpi, Lauri, Ylivaara, Oili M. E., Vaajoki, Antti, Liu, Xuwen, Rontu, Ville, Sintonen, Sakari, Haimi, Eero, Malm, Jari, Bosund, Markus, Tuominen, Marko, Sajavaara, Timo, Lipsanen, Harri, Hannula, Simo-Pekka, Puurunen, Riikka L., Ronkainen, Helena

“…Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin…”
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Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization by Kim, Soo-Hyun, Oh, Su Suk, Kim, Ki-Bum, Kang, Dae-Hwan, Li, Wei-Min, Haukka, Suvi, Tuominen, Marko

“…The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion…”
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Nickel silicide for source-drain contacts from ALD NiO films by Pore, Viljami, Tois, Eva, Matero, Raija, Haukka, Suvi, Tuominen, Marko, Woodruff, Jacob, Milligan, Brennan, Tang, Fu, Givens, Michael

“…In this work, we demonstrate the preparation of nickel monosilicide (NiSi) layers on silicon using a conformal NiO ALD process and thin sacrificial Ge…”
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Gate stack preparation with high-k materials in a cluster tool by De Gendt, S., Heyns, M., Conard, T., Hohira, H., Richard, O., Vandervorst, W., Caymax, M., Maes, J.W., Tuominen, M.

“…Oxide layers of metals such as Zr and Al are possible candidates to replace SiO/sub 2/ as gate dielectric for sub-1 nm EOT (Equivalent Oxide Thickness). We…”
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