Search Results - "Tuomi, T.O."

Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers by Lankinen, A., Tuomi, T.O., Kostamo, P., Jussila, H., Sintonen, S., Lipsanen, H., Tilli, M., Mäkinen, J., Danilewsky, A.N.

“…Large-area back-reflection and transmission X-ray diffraction topographs of bonded silicon-on-insulator (SOI) wafers made with synchrotron radiation allowed…”
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Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography by Jussila, H., Nagarajan, S., Sintonen, S., Suihkonen, S., Lankinen, A., Huhtio, T., Paulmann, C., Lipsanen, H., Tuomi, T.O., Sopanen, M.

“…GaP0.98N0.02 layers having a thickness from 75nm to 600nm are grown on GaP substrates by metalorganic vapor phase epitaxy. Back-reflection X-ray topographs…”
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Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge by Lankinen, A., Knuuttila, L., Kostamo, P., Tuomi, T.O., Lipsanen, H., McNally, P.J., O’Reilly, L.

“…Ga 1 - x In x P layers are grown on GaAs/Ge substrates by metalorganic vapor phase epitaxy and studied by means of synchrotron X-ray topography and…”
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Structural and electrical characterisation of ion-implanted strained silicon by Horan, K., Lankinen, A., O’Reilly, L., Bennett, N.S., McNally, P.J., Sealy, B.J., Cowern, N.E.B., Tuomi, T.O.

“…The production of low resistance ultra-shallow junctions for e.g. source/drain extensions using low energy ion-implantation will be required for future CMOS…”
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Anisotropic surface structure in ordered strained InGaP by Hasenöhrl, S, Kúdela, R, Novák, J, Tuomi, T.O, Knuuttila, L

“…We have studied the surface structure of ordered In x Ga 1− x P organometallic vapour phase epitaxy (OMVPE)-grown layers using optical microscopy, atomic force…”
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The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron X-ray topography by Noonan, D., McNally, P.J., Chen, W.-M., Lankinen, A., Knuuttila, L., Tuomi, T.O., Danilewsky, A.N., Simon, R.

“…The switch-over to the use of flip-chip Si integrated circuit bonding techniques has been driven by a need to develop higher power and lower voltage devices,…”
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