Search Results - "Tuomi, T. O."

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge by Lankinen, A., Knuuttila, L., Kostamo, P., Tuomi, T.O., Lipsanen, H., McNally, P.J., O’Reilly, L.

“…Ga 1 - x In x P layers are grown on GaAs/Ge substrates by metalorganic vapor phase epitaxy and studied by means of synchrotron X-ray topography and…”
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Geometric determination of direction of dislocations using synchrotron X‐ray transmission topography by Tuomi, T. O., Lankinen, A., Anttila, O.

“…When performing transmission polychromatic beam topography, the extensions to the line segments of the diffraction images of a straight dislocation are shown…”
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In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs by Reentilä, O., Lankinen, A., Mattila, M., Säynätjoki, A., Tuomi, T. O., Lipsanen, H., O’Reilly, L., McNally, P. J.

“…In order to investigate the possibilities of in-situ monitoring of GaAsN bulk layer growth and the crystal quality concerning the formation of misfit…”
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Raman scattering studies of ultrashallow Sb implants in strained Si by O’Reilly, L., Bennett, N. S., McNally, P. J., Sealy, B. J., Cowern, N. E. B., Lankinen, A., Tuomi, T. O.

“…Sheet resistance ( R s ) reductions are presented for antimony doped layers in strained Si. We use micro-Raman spectroscopy to characterise the impact of a low…”
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Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy by Säynätjoki, A., Lankinen, A., Tuomi, T. O., McNally, P. J., Danilewsky, A., Zhilyaev, Y., Fedorov, L.

“…Hydride vapour phase epitaxy grown all-epitaxial p-i-n structures were studied by synchrotron X-ray topography. Three types of process induced dislocations…”
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Dislocations at the interface between sapphire and GaN by Lankinen, A., Lang, T., Suihkonen, S., Svensk, O., Säynätjoki, A., Tuomi, T. O., McNally, P. J., Odnoblyudov, M., Bougrov, V., Danilewsky, A. N., Bergman, P., Simon, R.

“…GaN layers grown by metal organic vapour phase epitaxy on sapphire were imaged by synchrotron radiation X-ray topography. The threading dislocations could not…”
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Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography by Jussila, H., Nagarajan, S., Sintonen, S., Suihkonen, S., Lankinen, A., Huhtio, T., Paulmann, C., Lipsanen, H., Tuomi, T.O., Sopanen, M.

“…GaP0.98N0.02 layers having a thickness from 75nm to 600nm are grown on GaP substrates by metalorganic vapor phase epitaxy. Back-reflection X-ray topographs…”
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Anisotropic surface structure in ordered strained InGaP by Hasenöhrl, S, Kúdela, R, Novák, J, Tuomi, T.O, Knuuttila, L

“…We have studied the surface structure of ordered In x Ga 1− x P organometallic vapour phase epitaxy (OMVPE)-grown layers using optical microscopy, atomic force…”
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Long-term follow-up of hexamethylene diisocyanate-, diphenylmethane diisocyanate-, and toluene diisocyanate-induced asthma by PIIRILÄ, P. L, NORDMAN, H, KESKINEN, H. M, LUUKKONEN, R, SALO, S.-P, TUOMI, T. O, TUPPURAINEN, M

“…In 1976-1992 245 new cases of asthma induced by diisocyanates were diagnosed, caused by hexamethylene diisocyanate (HDI) in 39%, diphenylmethane diisocyanate…”
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Structural and electrical characterisation of ion-implanted strained silicon by Horan, K., Lankinen, A., O’Reilly, L., Bennett, N.S., McNally, P.J., Sealy, B.J., Cowern, N.E.B., Tuomi, T.O.

“…The production of low resistance ultra-shallow junctions for e.g. source/drain extensions using low energy ion-implantation will be required for future CMOS…”
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Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers by Lankinen, A., Tuomi, T.O., Kostamo, P., Jussila, H., Sintonen, S., Lipsanen, H., Tilli, M., Mäkinen, J., Danilewsky, A.N.

“…Large-area back-reflection and transmission X-ray diffraction topographs of bonded silicon-on-insulator (SOI) wafers made with synchrotron radiation allowed…”
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Metal-like Plasma Resonance in Fast-Neutron-Irradiated GaAs Observed by Means of Electroreflectance by Tuomi, T. O., Tiainen, O. J. A.

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Dislocations at the interface between sapphire and GaN by LANKINEN, A, LANG, T, BERGMAN, P, SIMON, R, SUIHKONEN, S, SVENSK, O, SÄYNÄTJOKI, A, TUOMI, T. O, MCNALLY, P. J, ODNOBLYUDOV, M, BOUGROV, V, DANILEWSKY, A. N

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The evaluation of mechanical stresses developed in underlying silicon substrates due to electroless nickel under bump metallization using synchrotron X-ray topography by Noonan, D., McNally, P.J., Chen, W.-M., Lankinen, A., Knuuttila, L., Tuomi, T.O., Danilewsky, A.N., Simon, R.

“…The switch-over to the use of flip-chip Si integrated circuit bonding techniques has been driven by a need to develop higher power and lower voltage devices,…”
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