Search Results - "Tuntasood, P."

A novel self-aligned highly reliable sidewall split-gate flash memory by Caleb Yu-Sheng Cho, Ming-Jer Chen, Chiou-Feng Chen, Tuntasood, P., Fan, D.-T., Tseng-Yi Liu

“…A self-aligned sidewall split-gate Flash memory cell is fabricated with overerase immunity. Particularly, the sidewall corner of the floating-gate is…”
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Increased current gain and suppression of peripheral base currents in silicide self-aligned narrow-width polysilicon-emitter transistors of an advanced BiCMOS technology by El-Diwany, M.H., Brassington, M.P., Tuntasood, P.

“…Silicidation of the emitter and base regions of the bipolar transistors of an advanced single-level polysilicon BiCMOS (bipolar complementary metal oxide…”
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An advanced single-level polysilicon submicrometer BiCMOS technology by Brassington, M.P., El-Diwany, M.H., Razouk, R.R., Thomas, M.E., Tuntasood, P.T.

“…An advanced VLSI (very large scale integration) technology providing high-performance n-p-n bipolar (f/sub T/=9 GHz) and submicrometer gate-length MOS…”
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Use of the polysilicon gate layer for local interconnect in a CMOS technology incorporating LDD structures by El-Diwany, M.H., Brassington, M.P., Tuntasood, P., Razouk, R.R., Poulter, M.W.

“…In conventional single-level polysilicon technologies, the polysilicon gate layer can be used as an interconnect layer through buried contacts between…”
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Split-gate NAND flash memory at 120nm technology node featuring fast programming and erase by Cheng-Yuan Hsu, Chi-Wei Hung, Da Sung, Chi-Shan Wu, Chen, S.C., Kuo, H.H., Pan, J.Y., Chen, C.L., Chuang, I.C., Huang, V., Hsue, C.C., Fan, D.-T., Jung-Chang Lu, Cho, C.Y.-S., Tseng, K., Hsu, A., Sheen, B., Tuntasood, P., Chiou-Feng Chen

“…For the first time, split-gate NAND flash memory featuring interpoly erase and mid-channel programming is demonstrated at 120nm technology node. The cell array…”
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Increased current gain and suppression of peripheral base currents in silicided self-aligned narrow width polysilicon-emitter transistors of an advanced BiCMOS technology by EL-DIWANY, M. H, BRASSINGTON, M. P, TUNTASOOD, P

“…Silicidation of the emitter and base regions of the biopolar transistors of an advanced single-level polysilicon BiCMOS (bipolar complementary metal oxide…”
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Advanced One Micron BICMOS Technology for High Speed 256K SRAMS by Bastani, B., Lage, C., Wong, L., Small, J., Lahri, R., Bouknight, L., Bowman, T., Manoliu, J., Tuntasood, P.

“…One micron BiCMOS technology for high speed 256K SRAM is developed. Advanced lithography and processing techniques support high density CMOS design with ECL…”
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New techniques for elimination of the bird's head and bird's beak by Burton, G., Tuntasood, P., Chien, F., Kovacs, R., Vora, M.

“…This paper introduces new techniques for the elimination of the infamous bird's head and bird's beak which result from the recessed Isoplanar technology. The…”
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