Search Results - "Tunhuma, S.M."

The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes by Omotoso, E., Meyer, W.E., van Rensburg, P.J. Janse, Igumbor, E., Tunhuma, S.M., Ngoepe, P.N.M., Danga, H.T., Auret, F.D.

“…Au/Ni (20:80) Schottky barrier diodes (SBDs) were resistively evaporated on nitrogen-doped n–type 4H-SiC. Current-voltage (I-V) and capacitance-voltage (C-V)…”
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Defects in swift heavy ion irradiated n-4H-SiC by Tunhuma, S.M., Diale, M., Nel, J.M., Madito, M.J., Hlatshwayo, T.T., Auret, F.D.

“…We have used confocal Raman spectroscopy, atomic force microscopy (AFM), Binary collision approximations and Deep level transient spectroscopy (DLTS) to study…”
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Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range by Gora, V.E., Auret, F.D., Danga, H.T., Tunhuma, S.M, Nyamhere, C., Igumbor, E., Chawanda, A

“…•Impact of palladium silicidation on barrier height inhomogeneity.•No correlation between electrically active defects and barrier inhomogeneities.•Limitation…”
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The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes by Tunhuma, S.M., Auret, F.D., Legodi, M.J., Diale, M.

“…In this study, the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky diodes have been measured over a wide temperature…”
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Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide by Gora, V.E., Chawanda, A., Nyamhere, C., Auret, F.D., Mazunga, F., Jaure, T., Chibaya, B., Omotoso, E., Danga, H.T., Tunhuma, S.M.

“…We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC…”
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Rare earth interstitial-complexes in Ge: Hybrid density functional studies by Igumbor, E., Omotoso, E., Danga, H.T., Tunhuma, S.M., Meyer, W.E.

“…We present results of the structural, energetic and electronic properties of rare earth (RE) interstitial-complexes in Ge (REGeGei; for RE: Ce, Pr, Eu, Er and…”
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Rare earth substitutional impurities in germanium: A hybrid density functional theory study by Igumbor, E., Omotoso, E., Tunhuma, S.M., Danga, H.T., Meyer, W.E.

“…The Heyd, Scuseria, and Ernzerhof (HSE06) hybrid functional by means of density functional theory has been used to model the electronic and structural…”
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Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs by Tunhuma, S.M., Auret, F.D., Nel, J.M., Omotoso, E., Danga, H.T., Igumbor, E., Diale, M.

“…We have used deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) to characterize the electrically active point defects introduced in n-type…”
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The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy by Danga, H.T., Tunhuma, S.M., Auret, F.D., Igumbor, E., Omotoso, E., Meyer, W.E.

“…Primary defects introduced in boron-doped silicon by an alpha-particle source with a fluence rate of 7 × 106 cm−2 s−1 at cryogenic temperatures were…”
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Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide by Gora, V.E., Chawanda, A., Nyamhere, C., Auret, F.D., Mazunga, F., Jaure, T., Chibaya, B., Omotoso, E., Danga, H.T., Tunhuma, S.M.

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Thermal stability of defects introduced by electron beam deposition in p-type silicon by Danga, H.T., Auret, F.D., Tunhuma, S.M., Omotoso, E., Igumbor, E., Meyer, W.E.

“…The electronic and thermal properties of defects introduced during electron beam deposition (EBD) followed by isochronal annealing of titanium (Ti) contacts on…”
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