Search Results - "Tu, L W"

Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy by Vidyasagar, R., Lin, Y.-T., Tu, L.-W.

“…We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578cm−1, by which it is attributed to…”
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Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material by Darakchieva, V., Lorenz, K., Barradas, N. P., Alves, E., Monemar, B., Schubert, M., Franco, N., Hsiao, C. L., Chen, L. C., Schaff, W. J., Tu, L. W., Yamaguchi, T., Nanishi, Y.

“…We study the unintentional H impurities in relation to the free electron properties of state-of-the-art InN films grown by molecular beam epitaxy (MBE)…”
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GaN nanorod arrays as a high-stability field emitter by Seo, H. W., Tu, L. W., Chen, M., Chen, Q. Y., Bensaoula, A., Wang, X. M., Chu, W. K.

“…Patterned arrays of epitaxial GaN (0001) nanorods by Si-ion bombardment of Si (111) substrates have been fabricated for the field emitters. The field emission…”
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Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy by Tu, L. W., Hsiao, C. L., Chi, T. W., Lo, I., Hsieh, K. Y.

“…Dislocation-free vertical GaN pillars in nanoscale were grown on Si (111) surface through self-assembly by molecular-beam epitaxy. No extra catalytic or…”
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Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films by Lozano, O., Chen, Q.Y., Wadekar, P.V., Seo, H.W., Chinta, P.V., Chu, L.H., Tu, L.W., Lo, Ikai, Yeh, S.W., Ho, N.J., Chuang, F.C., Jang, D.J., Wijesundera, D., Chu, Wei-Kan

“…In2O3 epitaxial thin films with heavy Nb doping have been investigated in expectation of achieving higher doping efficiency per doping atom than what has been…”
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GaN nanowire ultraviolet photodetector with a graphene transparent contact by Babichev, A V, Zhang, H, Lavenus, P, Julien, F H, Egorov, AYu, Lin, Y T, Tu, L W, Tchernycheva, M

“…We report on the fabrication of graphene contact to GaN nanowire ensemble and on the demonstration of photodetectors using chemical vapor deposition-grown…”
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Evolution of nanoripples on silicon by gas cluster-ion irradiation by Lozano, Omar, Chen, Q. Y., Tilakaratne, B. P., Seo, H. W., Wang, X. M., Wadekar, P. V., Chinta, P. V., Tu, L. W., Ho, N. J., Wijesundera, D., Chu, W. K.

“…Si wafers of (100), (110) and (111) orientations were bombarded by gas cluster ion beam (GCIB) of 3000 Ar-atoms/cluster on average at a series of angles…”
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Resonant cavity light-emitting diode by SCHUBERT, E. F, WANG, Y.-H, CHO, A. Y, TU, L.-W, ZYDZIK, G. J

“…A novel concept of a light-emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity…”
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Carrier dynamics and intervalley scattering in InN by Jang, D.-J., Lin, G.-T., Lee, M.-E., Wu, C.-L., Hsiao, C.-L., Tu, L.-W.

“…The carrier cooling and the carrier relaxation of an InN thin film illuminated with two excitation energies of 1.53 and 3.06 eV were studied by an ultrafast…”
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Epitaxial GaN nanorods free from strain and luminescent defects by Seo, H. W., Chen, Q. Y., Iliev, M. N., Tu, L. W., Hsiao, C. L., Mean, James K., Chu, Wei-Kan

“…Raman spectroscopy, cathodoluminescence imaging, and electron backscatter diffraction have been used to characterize the GaN nanorods as compared to their…”
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High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure by Tu, L. W., Kuo, W. C., Lee, K. H., Tsao, P. H., Lai, C. M., Chu, A. K., Sheu, J. K.

“…High-dielectric-constant Ta2O5 has been grown on the n-GaN epifilm by rf magnetron sputtering. Photoluminescence measurement has been performed to compare the…”
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Role of impurities and dislocations for the unintentional n-type conductivity in InN by Darakchieva, V., Barradas, N.P., Xie, M.-Y., Lorenz, K., Alves, E., Schubert, M., Persson, P.O.Å., Giuliani, F., Munnik, F., Hsiao, C.L., Tu, L.W., Schaff, W.J.

“…We present a study on the role of dislocations and impurities for the unintentional n-type conductivity in high-quality InN grown by molecular beam epitaxy…”
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Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity by Chang, C. W., Wadekar, P. V., Guo, S. S., Cheng, Y. J., Chou, M., Huang, H. C., Hsieh, W. C., Lai, W. C., Chen, Q. Y., Tu, L. W.

“…For the development of non-polar nitrides based optoelectronic devices, high-quality films with smooth surfaces, free of defects or clusters, are critical. In…”
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Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping by Chinta, P. V., Lozano, O., Wadekar, P. V., Hsieh, W. C., Seo, H. W., Yeh, S. W., Liao, C. H., Tu, L. W., Ho, N. J., Zhang, Y. S., Pang, W. Y., Lo, Ikai, Chen, Q. Y., Chu, W. K.

“…The metal-like behaviors and metal–semiconductor transition (MST) of highly conducting Zn 1− x Al x O ( x  = 1 at.% to 10 at.%) thin films deposited by…”
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Anti-reflection sub-wavelength structures design for InGaN-based solar cells performed by the finite-difference-time-domain (FDTD) simulation method by Yang, L.M., Pan, C.Y., Lu, F.P., Chang, C.W., Feng, S.W., Tu, L.W.

“…The design of wide-spectrum anti-reflection (AR) sub-wavelength structures (SWS) for InGaN-based solar cells is investigated in this study. The design…”
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Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy by Passlack, M., Hong, M., Mannaerts, J. P., Kwo, J. R., Tu, L. W.

“…The recombination velocity at oxide–GaAs interfaces fabricated by in situ multiple-chamber molecular beam epitaxy has been investigated. Ga2O3, Al2O3, SiO2,…”
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Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy by Huang, J.H., Hsieh, K.Y., Tsai, J.K., Huang, H.L., Hsieh, C.H., Lee, Y.C., Chuang, K.L., Lo, Ikai, Tu, L.W.

“…The N-polar GaN grown on c-plane sapphire with an indium-facilitated growth technique by RF-MBE has been studied. Upon the incorporation of indium during…”
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Polymer PBT/n-GaN metal–insulator–semiconductor structure by Tu, L. W., Tsao, P. H., Lee, K. H., Lo, Ikai, Bai, S. J., Wu, C. C., Hsieh, K. Y., Sheu, J. K.

“…Organic poly(p-phenylenebenzobisthiazole), PBT, is spin coated on n-GaN epilayer to serve as a gate insulating layer. The GaN is grown on c sapphire by the…”
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Photogated transistor of III-nitride nanorods by Seo, H. W., Tu, L. W., Chen, Q. Y., Ho, C. Y., Lin, Y. T., Wu, K. L., Jang, D. J., Norman, D. P., Ho, N. J.

“…A III-nitride-based photogated transistor using photons to control the channel width of an otherwise gateless field effect transistor (FET) is investigated…”
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Yellow luminescence depth profiling on GaN epifilms using reactive ion etching by Tu, L. W., Lee, Y. C., Chen, S. J., Lo, I., Stocker, D., Schubert, E. F.

“…Depth profiling measurements of photoluminescence on GaN epitaxial films grown on c-plane sapphire with metalorganic chemical vapor deposition have been…”
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