Search Results - "Tsybeskov, L."

Silicon Photonics: CMOS Going Optical [Scanning the Issue] by Tsybeskov, Leonid, Lockwood, David J., Ichikawa, Masakazu

“…For almost 50 years, silicon microelectronics has been the engine of the modern information revolution. Complex microprocessors, dense memory circuits, and…”
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Fast light-emitting silicon-germanium nanostructures for optical interconnects by Lockwood, D. J., Tsybeskov, L.

“…Epitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3–1.6μm. The…”
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Thermal crystallization of amorphous Si/SiO2 superlattices by Zacharias, M., Bläsing, J., Veit, P., Tsybeskov, L., Hirschman, K., Fauchet, P. M.

“…Annealing of amorphous Si/SiO2 superlattices produces Si nanocrystals. The crystallization has been studied by transmission electron microscopy and x-ray…”
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Nanocrystalline-silicon superlattice produced by controlled recrystallization by Tsybeskov, L., Hirschman, K. D., Duttagupta, S. P., Zacharias, M., Fauchet, P. M., McCaffrey, J. P., Lockwood, D. J.

“…Nanocrystalline-silicon superlattices are produced by controlled recrystallization of amorphous-Si/SiO2 multilayers. The recrystallization is performed by a…”
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Carrier recombination in tailored multilayer Si/Si1−xGex nanostructures by Mala, S.A., Tsybeskov, L., Lockwood, D.J., Wu, X., Baribeau, J.-M.

“…Photoluminescence (PL) measurements were performed in Si/Si1−xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into…”
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Silicon-based visible light-emitting devices integrated into microelectronic circuits by Hirschman, K. D, Tsybeskov, L, Duttagupta, S. P, Fauchet, P. M

“…MICROELECTRONIC device integration has progressed to the point where complete 'systems-on-a-chip' have been realized1-3 . Now that optoelectronics is becoming…”
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Laser-induced structural modifications in nanocrystalline silicon/amorphous silicon dioxide superlattices by Kamenev, B. V., Grebel, H., Tsybeskov, L.

“…We calculate and experimentally detect the laser melting threshold in nanocrystalline Si/amorphous Si O 2 superlattices. Using laser energy density slightly…”
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Ordering and self-organization in nanocrystalline silicon by White, B, Tsybeskov, L, Grom, G. F, Labbé, H. J, McCaffrey, J. P, Fauchet, P. M, Diener, J, Lockwood, D. J, Kovalev, D, Koch, F

“…The spontaneous formation of organized nanocrystals in semiconductors has been observed during heteroepitaxial growth and chemical synthesis. The ability to…”
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Strain-induced lateral self-organization in Si/SiO2 nanostructures by Tsybeskov, L., Kamenev, B. V., Sirenko, A. A., McCaffrey, J. P., Lockwood, D. J.

“…We show that strain, arising from the mismatch between Si and SiO2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along…”
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Photoluminescence and Raman scattering in three-dimensional Si/Si1−xGex nanostructures by Kamenev, B. V., Tsybeskov, L., Baribeau, J.-M., Lockwood, D. J.

“…We report detailed Raman and photoluminescence (PL) measurements in Si/Si1−xGex nanostructures grown by molecular-beam epitaxy under conditions of near…”
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Stable and efficient electroluminescence from a porous silicon-based bipolar device by Tsybeskov, L., Duttagupta, S. P., Hirschman, K. D., Fauchet, P. M.

“…A complete process compatible with conventional Si technology has been developed in order to produce a bipolar light-emitting device. This device consists of a…”
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Time-resolved carrier tunneling in nanocrystalline silicon/amorphous silicon dioxide superlattices by Duzhko, V., Tsybeskov, L.

“…Eight period nanocrystalline Si/amorphous SiO2 superlattices with Si nanocrystals of ∼5 nm diameter and tunnel-transparent (1.6–1.8-nm-thick) layers of SiO2…”
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Correlation between photoluminescence and surface species in porous silicon: Low-temperature annealing by Tsybeskov, L., Fauchet, P. M.

“…Photoluminescence (PL) and Fourier-transform infrared (FTIR) measurements have been performed on light-emitting porous silicon (LEPSi) after annealing at…”
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Electrochemical polymerization, optical and electrical characterizations of polycarbazole on single wall carbon nanotubes by Diamant, Y., Chen, J., Han, H., Kamenev, B., Tsybeskov, L., Grebel, H.

“…Electrochemical polymerization of polycarbazole (PCz) on CVD grown, single wall carbon nanotubes (SWCNT), by using two-electrode cell is reported. This process…”
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Silicon–germanium nanostructures for on-chip optical interconnects by Tsybeskov, L., Lee, E.-K., Chang, H.-Y., Lockwood, D. J., Baribeau, J.-M., Wu, X., Kamins, T. I.

“…Silicon–germanium epitaxially grown on silicon in the form of two-dimensional (quantum wells) and three-dimensional (quantum dots) nanostructures exhibits…”
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Excitation-dependent photoluminescence in Ge ∕ Si Stranski-Krastanov nanostructures by Kamenev, B. V., Lee, E.-K., Chang, H.-Y., Han, H., Grebel, H., Tsybeskov, L., Kamins, T. I.

“…In Ge ∕ Si Stranski-Krastanov nanostructures grown by chemical vapor deposition, the authors find ∼ 30 meV /decade photoluminescence (PL) spectral shift toward…”
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Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire-substrate heterointerfaces by Kamenev, B. V., Sharma, V., Tsybeskov, L., Kamins, T. I.

“…We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and…”
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Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures by Kamenev, B. V., Grebel, H., Tsybeskov, L., Kamins, T. I., Williams, R. Stanley, Baribeau, J. M., Lockwood, D. J.

“…Using polarized Raman spectroscopy, we examine different vibrational modes (i.e., Si–Si, Si–Ge, and Ge–Ge) in Si/Ge self-organized nanostructures. Here, we…”
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Intrinsic band-edge photoluminescence from silicon clusters at room temperature by Tsybeskov, L, Moore, KL, Hall, DG, Fauchet, PM

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Optical Properties of Composition-Controlled Three-Dimensional Si/Si Ge Nanostructures by Tsybeskov, L., Kamenev, B.V., Baribeau, J.-M., Lockwood, D.J.

“…We report the Raman, continuous-wave (CW), and time-resolved photoluminescence (PL) measurements in a series of multilayer Si/Si 1-x Ge x samples with an…”
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