Search Results - "Tsunoda, Isao"
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Polarization Property Associated with Surface Plasmon Resonance in a Palladium Thin-Film Coated Aluminum Grating in a Conical Mounting and Its Application to Hydrogen Gas Detection
Published in Sensors (Basel, Switzerland) (20-03-2024)“…We have investigated a polarization property of the (specularly) reflected light from an aluminum grating, coated with a palladium (Pd) thin-film on its…”
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Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors
Published in IEEE transactions on nuclear science (01-12-2020)“…Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide…”
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Investigation into Ethanol Concentration Changes of Ethanol–Water Solution Using Polarization Property Associated with Surface Plasmon Resonance in Aluminum Grating in Conical Mounting
Published in Sensors and materials (01-01-2023)“…We experimentally investigated the changes in the ethanol concentration of an ethanol–water solution using a polarization property of the (specularly)…”
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Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation
Published in Journal of robotics and mechatronics (20-02-2024)“…The radiation tolerance of a microcontroller (Raspberry Pi) required for the development of decommissioning robots was investigated. We found that the flash…”
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Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 ○C
Published in AIP advances (01-05-2020)“…The effect of stress stimulation on gold (Au) induced lateral crystallization (GILC) of amorphous Ge on insulating substrates is investigated. As a result, the…”
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Au induced low-temperature formation of preferentially (111)-oriented crystalline Ge on insulator
Published in Japanese Journal of Applied Physics (01-04-2016)“…The effects of Au insertion in solid-phase crystallization for amorphous Ge films on SiO2/Si substrates were investigated to achieve oriented crystalline Ge…”
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Fabrication of Back-Side Illuminated Complementary Metal Oxide Semiconductor Image Sensor Using Compliant Bump
Published in Japanese Journal of Applied Physics (01-04-2010)“…We fabricated a back-side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor in which a very-thin BSI photodiode array chip was…”
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Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2
Published in Japanese Journal of Applied Physics (02-03-2016)“…We have investigated the acceleration energy (0.5-2.0 MeV)-modulated electron irradiation effect of Au-induced lateral crystallization for amorphous Ge on…”
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Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2
Published in Thin solid films (30-04-2014)“…We have investigated the low temperature of Au induced lateral crystallization of electron irradiated amorphous Ge on SiO2/Si substrate. The reduction of the…”
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Journal Article Conference Proceeding -
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Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se2 Solar Cells
Published in Jpn J Appl Phys (01-11-2012)“…The optical and electrical properties of proton irradiated Cu(In,Ga)Se 2 (CIGS) solar cells and the composed thin films such as transparent conducting oxide…”
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Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2
Published in Applied physics letters (31-03-2003)“…Metal-induced low-temperature (≦550 °C) crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2 has been investigated. In the case of low Ge fraction (0≦x≦0.2),…”
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Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing
Published in Applied surface science (15-03-2004)“…Ion beam stimulated solid phase crystallization of a-Si(1-x)Ge(x) (0 = < x = < 1) on SiO2 has been investigated. The critical temperature to cause crystal…”
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Conference Proceeding Journal Article -
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Direct formation of strained Si on insulator by laser annealing
Published in Thin solid films (05-06-2006)“…Direct formation of strained Si on insulator has been investigated by using laser annealing. The silicon on insulator (SOI) and amorphous Si layers deposited…”
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Journal Article Conference Proceeding -
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Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2
Published in Thin solid films (15-02-2001)“…Influences of ion-beam irradiation on solid-phase-crystallization of a-Si on SiO2 were studied in the temperature range between 200 and 700°C. Significant…”
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Journal Article Conference Proceeding -
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Low temperature formation of high-quality crystalline Ge (111) by improving Au catalyst crystallinity
Published in Journal of crystal growth (15-10-2021)“…•The effect of Au crystallinity on gold-induced crystallization of Ge was examined.•Improvement the crystallinity of Au suppressed the diffusion of Au into the…”
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Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator
Published in Japanese Journal of Applied Physics (2003)Get full text
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Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing
Published in Japanese Journal of Applied Physics (29-02-2024)“…Abstract Magnesium (Mg)-induced lateral crystallization (Mg-ILC) of amorphous germanium (Ge) on a SiO 2 stacked structure was investigated. From Raman mapping…”
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Low Temperature Annealing of Electron, Neutron and Proton Irradiation Effects on SiC Radiation Detectors
Published in IEEE transactions on nuclear science (01-10-2023)“…Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it especially appropriate for radiation monitoring in radiation…”
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Study of deep levels in the Mg2Si grown by vertical Bridgeman method
Published in Japanese Journal of Applied Physics (01-05-2023)“…The electrical characteristics of a Mg2Si p–n junction diode was investigated. The n-Mg2Si substrate was grown by using the vertical-Bridgeman method. A p–n…”
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