Search Results - "Tsunoda, Isao"

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  1. 1

    Polarization Property Associated with Surface Plasmon Resonance in a Palladium Thin-Film Coated Aluminum Grating in a Conical Mounting and Its Application to Hydrogen Gas Detection by Matsuda, Toyonori, Tsunoda, Isao, Koba, Shinichiro, Oshiro, Yu, Odagawa, Hiroyuki

    Published in Sensors (Basel, Switzerland) (20-03-2024)
    “…We have investigated a polarization property of the (specularly) reflected light from an aluminum grating, coated with a palladium (Pd) thin-film on its…”
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    Journal Article
  2. 2

    Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors by Rafi, Joan Marc, Pellegrini, Giulio, Godignon, Philippe, Ugobono, Sofia Otero, Rius, Gemma, Tsunoda, Isao, Yoneoka, Masashi, Takakura, Kenichiro, Kramberger, Gregor, Moll, Michael

    Published in IEEE transactions on nuclear science (01-12-2020)
    “…Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide…”
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    Journal Article
  3. 3

    Investigation into Ethanol Concentration Changes of Ethanol–Water Solution Using Polarization Property Associated with Surface Plasmon Resonance in Aluminum Grating in Conical Mounting by Matsuda, Toyonori, Odagawa, Hiroyuki, Nagata, Isao Tsunoda,Masanori, Kawakita, Takao

    Published in Sensors and materials (01-01-2023)
    “…We experimentally investigated the changes in the ethanol concentration of an ethanol–water solution using a polarization property of the (specularly)…”
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    Journal Article
  4. 4

    Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation by Takakura, Kenichiro, Matsumoto, Kensuke, Tateishi, Kousei, Yoneoka, Masashi, Tsunoda, Isao, Suzuki, Shigekazu, Kawatsuma, Shinji

    Published in Journal of robotics and mechatronics (20-02-2024)
    “…The radiation tolerance of a microcontroller (Raspberry Pi) required for the development of decommissioning robots was investigated. We found that the flash…”
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    Journal Article
  5. 5

    Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 ○C by Nishijima, Taiki, Shimizu, Satoshi, Kusano, Kinta, Kudo, Kazuki, Furuta, Masahiro, Kusuda, Yutaka, Motoyama, Shinichi, Naka, Nobuyuki, Numata, Tomoko, Takakura, Kenichiro, Tsunoda, Isao

    Published in AIP advances (01-05-2020)
    “…The effect of stress stimulation on gold (Au) induced lateral crystallization (GILC) of amorphous Ge on insulating substrates is investigated. As a result, the…”
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    Journal Article
  6. 6

    Au induced low-temperature formation of preferentially (111)-oriented crystalline Ge on insulator by Okamoto, Hayato, Kudo, Kohei, Nomitsu, Tatsushi, Mochii, Ryosuke, Moto, Kenta, Takakura, Kenichiro, Tsunoda, Isao

    Published in Japanese Journal of Applied Physics (01-04-2016)
    “…The effects of Au insertion in solid-phase crystallization for amorphous Ge films on SiO2/Si substrates were investigated to achieve oriented crystalline Ge…”
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    Journal Article
  7. 7

    Fabrication of Back-Side Illuminated Complementary Metal Oxide Semiconductor Image Sensor Using Compliant Bump by Watanabe, Naoya, Tsunoda, Isao, Takao, Takayuki, Tanaka, Koichiro, Asano, Tanemasa

    Published in Japanese Journal of Applied Physics (01-04-2010)
    “…We fabricated a back-side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor in which a very-thin BSI photodiode array chip was…”
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    Journal Article
  8. 8

    Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2 by Moto, Kenta, Sakiyama, Shin, Okamoto, Hayato, Hara, Hideyuki, Nishimura, Hiroto, Takakura, Kenichiro, Tsunoda, Isao

    Published in Japanese Journal of Applied Physics (02-03-2016)
    “…We have investigated the acceleration energy (0.5-2.0 MeV)-modulated electron irradiation effect of Au-induced lateral crystallization for amorphous Ge on…”
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    Journal Article
  9. 9

    Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2 by Sakiyama, Shin, Kaneko, Takahiro, Ootsubo, Takanobu, Sakai, Takatsugu, Nakashima, Kazutoshi, Moto, Kenta, Yoneoka, Masashi, Takakura, Kenichiro, Tsunoda, Isao

    Published in Thin solid films (30-04-2014)
    “…We have investigated the low temperature of Au induced lateral crystallization of electron irradiated amorphous Ge on SiO2/Si substrate. The reduction of the…”
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    Journal Article Conference Proceeding
  10. 10

    Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se2 Solar Cells by Hirose, Yuiko, Warasawa, Moe, Tsunoda, Isao, Takakura, Kenichiro, Sugiyama, Mutsumi

    Published in Jpn J Appl Phys (01-11-2012)
    “…The optical and electrical properties of proton irradiated Cu(In,Ga)Se 2 (CIGS) solar cells and the composed thin films such as transparent conducting oxide…”
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    Journal Article
  11. 11

    Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2 by Kanno, Hiroshi, Tsunoda, Isao, Kenjo, Atsushi, Sadoh, Taizoh, Miyao, Masanobu

    Published in Applied physics letters (31-03-2003)
    “…Metal-induced low-temperature (≦550 °C) crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2 has been investigated. In the case of low Ge fraction (0≦x≦0.2),…”
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    Journal Article
  12. 12

    Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing by TSUNODA, Isao, KENJO, Atsushi, SADOH, Taizoh, MIYAO, Masanobu

    Published in Applied surface science (15-03-2004)
    “…Ion beam stimulated solid phase crystallization of a-Si(1-x)Ge(x) (0 = < x = < 1) on SiO2 has been investigated. The critical temperature to cause crystal…”
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    Conference Proceeding Journal Article
  13. 13

    Direct formation of strained Si on insulator by laser annealing by Tsunoda, Isao, Matsuura, Ryo, Tanaka, Masanori, Watakabe, Hajime, Sameshima, Toshiyuki, Miyao, Masanobu

    Published in Thin solid films (05-06-2006)
    “…Direct formation of strained Si on insulator has been investigated by using laser annealing. The silicon on insulator (SOI) and amorphous Si layers deposited…”
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    Journal Article Conference Proceeding
  14. 14

    Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2 by Miyao, Masanobu, Tsunoda, Isao, Sadoh, Taizoh, Kenjo, Atsushi

    Published in Thin solid films (15-02-2001)
    “…Influences of ion-beam irradiation on solid-phase-crystallization of a-Si on SiO2 were studied in the temperature range between 200 and 700°C. Significant…”
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    Journal Article Conference Proceeding
  15. 15

    Low temperature formation of high-quality crystalline Ge (111) by improving Au catalyst crystallinity by Sumi, Kazuaki, Shimizu, Noboru, Takakura, Kenichiro, Tsunoda, Isao

    Published in Journal of crystal growth (15-10-2021)
    “…•The effect of Au crystallinity on gold-induced crystallization of Ge was examined.•Improvement the crystallinity of Au suppressed the diffusion of Au into the…”
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    Journal Article
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    Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing by Morimoto, Atsuki, Hirai, Towa, Takazaiku, Ayato, Eto, Yo, Kuwazuru, Hajime, Takakura, Kenichiro, Tsunoda, Isao

    Published in Japanese Journal of Applied Physics (29-02-2024)
    “…Abstract Magnesium (Mg)-induced lateral crystallization (Mg-ILC) of amorphous germanium (Ge) on a SiO 2 stacked structure was investigated. From Raman mapping…”
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    Journal Article
  19. 19

    Low Temperature Annealing of Electron, Neutron and Proton Irradiation Effects on SiC Radiation Detectors by Rafi, Joan Marc, Pellegrini, Giulio, Godignon, Philippe, Rius, Gemma, Dauderys, Vainius, Tsunoda, Isao, Yoneoka, Masashi, Takakura, Kenichiro, Kramberger, Gregor, Moll, Michael

    Published in IEEE transactions on nuclear science (01-10-2023)
    “…Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it especially appropriate for radiation monitoring in radiation…”
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    Journal Article
  20. 20

    Study of deep levels in the Mg2Si grown by vertical Bridgeman method by Fukushima, Kouki, Mizunuma, Naoki, Uematsu, Tatsuya, Shimizu, Kyoko, Ota, Takehiro, Tsunoda, Isao, Yoneoka, Masashi, Udono, Haruhiko, Takakura, Kenichiro

    Published in Japanese Journal of Applied Physics (01-05-2023)
    “…The electrical characteristics of a Mg2Si p–n junction diode was investigated. The n-Mg2Si substrate was grown by using the vertical-Bridgeman method. A p–n…”
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    Journal Article