Search Results - "Tsubota, T.K."

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    Ion-induced sustained high current condition in a bipolar device by Koga, R., Ferro, R.J., Mabry, D.J., Pinkerton, S.D., Romeo, D.E., Scarpulla, J.R., Tsubota, T.K., Shoga, M.

    “…Observation of an ion-induced sustained high current condition ("high current anomaly") in a bipolar device, that is similar but not identical to latchup, is…”
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    Journal Article Conference Proceeding
  2. 2

    The impact of ASIC devices on the SEU vulnerability of space-borne computers by Koga, R., Crain, W.R., Crawford, K.B., Hansel, S.J., Pinkerton, S.D., Tsubota, T.K.

    Published in IEEE transactions on nuclear science (01-12-1992)
    “…Application-specific integrated circuits (ASICs) offer a number of advantages over traditional multicomponent microcircuits, including reductions in both size…”
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    Journal Article Conference Proceeding
  3. 3

    Cost-effective numerical simulation of SEU by Rollins, J.G., Tsubota, T.K., Kolasinski, W.A., Haddad, N.F., Rockett, L., Cerrila, M., Hennley, W.B.

    Published in IEEE transactions on nuclear science (01-12-1988)
    “…A highly modified version of the PISCES 2-D simulator has been developed that allows simultaneous solution of the charge collection and circuit problems and…”
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    Journal Article
  4. 4

    Single ion induced multiple-bit upset in IDT 256K SRAMs by Koga, R., Crawford, K.B., Grant, P.B., Kolasinski, W.A., Leung, D.L., Lie, T.J., Mayer, D.C., Pinkerton, S.D., Tsubota, T.K.

    “…The occurrence of single ion induced multiple-bit upset in IDT71256 256K SRAMs was investigated using high energy heavy ions, with special attention to upsets…”
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    Conference Proceeding
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