Search Results - "Tsubota, T.K."
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Ion-induced sustained high current condition in a bipolar device
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01-12-1994)“…Observation of an ion-induced sustained high current condition ("high current anomaly") in a bipolar device, that is similar but not identical to latchup, is…”
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Journal Article Conference Proceeding -
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The impact of ASIC devices on the SEU vulnerability of space-borne computers
Published in IEEE transactions on nuclear science (01-12-1992)“…Application-specific integrated circuits (ASICs) offer a number of advantages over traditional multicomponent microcircuits, including reductions in both size…”
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Journal Article Conference Proceeding -
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Cost-effective numerical simulation of SEU
Published in IEEE transactions on nuclear science (01-12-1988)“…A highly modified version of the PISCES 2-D simulator has been developed that allows simultaneous solution of the charge collection and circuit problems and…”
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Journal Article -
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Single ion induced multiple-bit upset in IDT 256K SRAMs
Published in RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3) (1993)“…The occurrence of single ion induced multiple-bit upset in IDT71256 256K SRAMs was investigated using high energy heavy ions, with special attention to upsets…”
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Conference Proceeding -
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