Search Results - "Tsuboi, Nozomu"
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Widegap CH3NH3PbBr3 solar cells for optical wireless power transmission application
Published in Applied physics letters (06-07-2020)“…The optoelectrical properties of bromide-based perovskite thin films were evaluated to develop an optical wireless power transmission system. CH3NH3PbBr3…”
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2
Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices
Published in Nanoscale research letters (29-11-2021)“…The two-dimensional materials have the thickness of an atomic layer level and are expected as alternative materials for future electronics and optoelectronics…”
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3
Modified solvent bathing method for forming high quality perovskite films
Published in Thin solid films (01-09-2018)“…We developed a new perovskite film forming process based on solvent bathing method. The preheating of substrate before spin-coating of precursor solution…”
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4
Highly oriented CuInS 2 thin films on graphene electrodes for solar-cell applications
Published in Thin solid films (01-07-2017)Get full text
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5
Layer dependency of graphene layers in perovskite/graphene solar cells
Published in Carbon (New York) (01-02-2021)“…We previously developed perovskite/graphene solar cells with improved long-term stability. In this study, we investigated the effect of the number of layers on…”
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6
Composition and Structure Control of Cu–Al–O Films Prepared by Reactive Sputtering and Annealing
Published in Japanese Journal of Applied Physics (01-01-2007)Get full text
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7
Perovskite/Graphene Solar Cells without a Hole-Transport Layer
Published in ACS applied energy materials (28-01-2019)“…This study was conducted with the objective of improving the stability of perovskite solar cells by using the unique characteristics of graphene in order to…”
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Control of luminescence and conductivity of delafossite-type CuYO2 by substitution of rare earth cation (Eu, Tb) and/or Ca cation for Y cation
Published in The Journal of physics and chemistry of solids (01-11-2005)Get full text
Conference Proceeding Journal Article -
9
Highly oriented CuInS2 thin films on graphene electrodes for solar-cell applications
Published in Thin solid films (31-07-2017)“…Highly oriented CuInS2 films were successfully prepared on graphene electrodes for solar-cell applications. CuInS2 films were deposited on high-quality…”
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10
GROWTH OF CuInS2 AND CuIn5S8 ON Si(001) BY THE MULTISOURCE EVAPORATION METHOD
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 42, no. 9A, pp. 5485-5489. 2003 (2003)“…Thin films of CuInS2, CuIn5S8 and a mixture of these were epitaxially grown on Si(001) wafers at 400 C using a multisource evaporation method in which the In…”
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11
Effects of Annealing on Chemical Composition, Crystallinity, Optical Transmission and Electrical Conductivity of ZnO Thin Films Prepared on Glass Substrates by Chemical Bath Deposition
Published in Japanese Journal of Applied Physics (01-03-2005)“…The effects of annealing on the chemical composition and other properties of ZnO thin films prepared on glass substrates by chemical bath deposition are…”
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12
Effect of Lattice Strain on Exciton Energy of AgGaS 2 Epitaxial Layers on GaAs (100)
Published in Japanese Journal of Applied Physics (01-04-1999)Get full text
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13
Emission Light and Multiple Surface Plasmon Excitations at Prism/Ag/Merocyanine Langmuir-Blodgett Films
Published in Japanese Journal of Applied Physics (2003)Get full text
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14
Orientation of CuGaS2 thin films on (1 0 0) GaAs and GaP substrates
Published in Journal of crystal growth (01-05-1997)Get full text
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15
Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells
Published in Japanese Journal of Applied Physics (01-02-2016)“…Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The…”
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Lattice Strain in AgGaS 2 Epitaxial Layers Grown on GaAs (100) by Multisource Evaporation
Published in Japanese Journal of Applied Physics (01-08-1998)“…Lattice strain in AgGaS 2 epitaxial layers of different thicknesses, which are grown on GaAs (100) by the multisource evaporation method, is described. Biaxial…”
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17
Raman Scattering and Two-Phonon Infrared Transmission Spectra of Cu(Al x Ga 1-x )S 2 Crystals
Published in Japanese Journal of Applied Physics (01-03-1997)“…First- and second-order Raman scattering and two-phonon infrared (IR) transmission measurement results for Cu(Al x Ga 1- x )S 2 single crystals have been…”
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18
Preparation and Properties of Ag(Al x Ga 1-x )S 2 Crystals by Iodine Transport Method
Published in Japanese Journal of Applied Physics (01-11-1999)“…The growth of chalcopyrite Ag(Al x Ga 1- x )S 2 crystals is demonstrated in the entire alloy composition range using the conventional iodine transport method…”
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OPTICAL PROPERTIES OF Ag(AlxGa1-x)S2 EPITAXIAL LAYERS GROWN ON GaAs(100) BY MULTISOURCE EVAPORATION
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 9A, pp. 5243-5246. 2000 (2000)“…Reflectance anomaly and photoluminescence emission spectra of Ag(AlxGa1-x)S2 epitaxial layers, which were grown in the range of x < 0.3 on GaAs (100) substrate…”
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PREPARATION AND PROPERTIES OF Ag(AlxGa1-x)S2 CRYSTALS BY IODINE TRANSPORT METHOD
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 38, no. 11, pp. 6445-6449. 1999 (1999)“…The growth of chalcopyrite Ag(AlxGa1-x)S2 crystals is demonstrated in the entire alloy composition range using the conventional iodine transport method. The…”
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