Search Results - "Tsendin, K. D."
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Physics of switching and memory effects in chalcogenide glassy semiconductors
Published in Semiconductors (Woodbury, N.Y.) (01-05-2012)“…Switching and memory effects in chalcogenide glassy semiconductors have been known for nearly fifty years. However, the physics of these effects remains…”
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Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe
Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)“…The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after…”
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Electronic–thermal switching and memory in chalcogenide glassy semiconductors
Published in Journal of non-crystalline solids (01-02-2011)“…A constant value of the activation energy of direct current conductivity in chalcogenide glassy semiconductors is a strong evidence of the existence of…”
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SUPERCONDUCTING PROPERTIES OF NEGATIVE-U CENTERS MATERIALS: CHALCOGENIDES, CUPRATE OXIDES AND FULLERIDES
Published in Journal of Optoelectronics and Advanced Materials (01-08-2005)“…If the concentration of negative-U centers is enough to create the pair band states, this can lead to superconductivity (negative-U centers model of…”
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The changing of initial state in a strong electric field and memory effect in chalcogenides
Published in Journal of Optoelectronics and Advanced Materials (01-10-2007)“…Our preliminary investigations have shown that information recording based on glass-crystal phase transition, which is induced by pulse of electric field in…”
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Application Of Chalcogenides For Creation Of New Superconductors
Published in Journal of Optoelectronics and Advanced Materials (01-12-2003)“…There was shown that some properties of both glassy semiconducting chalcogenides and HTSC cuprates can be explained in the frame of negative-U center model…”
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Temperature dependence of the hole concentration in the model of a hole metal with negative-U centers
Published in Physics of the solid state (2009)“…The temperature dependence of the hole concentration is studied within the model of a hole metal with negative- U centers. Different versions of the model with…”
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Adiabatic potentials of chalcogenide vitreous semiconductors
Published in Glass physics and chemistry (01-07-2000)“…A method of calculating the adiabatic potentials for chalcogenide vitreous semiconductors has been proposed. The angle between the valence bonds of the…”
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Nuclear microanalysis of amorphous As2Se3 films modified with Ln(thd)3 (Ln = Eu, Tb)
Published in Inorganic materials (01-08-2006)“…The compositions of amorphous As2Se3 thin films modified with the Ln(thd)3 (Ln = Eu, Tb) complexes have been determined by nuclear microanalysis using…”
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Similarity in the superconducting properties of chalcogenides, cuprate oxides and fullerides
Published in Physica. C, Superconductivity (01-10-2004)“…The idea of Anderson pairs has been put forward for explanation of many extraordinary properties of chalcogenides glassy semiconductors. Recent decades made…”
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Conditions preventing thermal breakdown in semiconductor devices
Published in Technical physics letters (01-06-2004)Get full text
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Reversible photoinduced changes in the spectrum of localized states in AsSe films
Published in Semiconductors (Woodbury, N.Y.) (01-01-2005)Get full text
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Nonlinearity of current-voltage characteristics of chalcogenide glassy semiconductors, caused by multiphonon tunnel ionization of negative-U-centers
Published in Semiconductors (Woodbury, N.Y.) (01-10-2009)“…The behavior of negative- U -centers in high electric fields was considered. It was shown that multiphonon tunnel ionization of negative- U -centers in…”
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Current-voltage characteristics of thin Ge2Sb2Te5 films taken using a measuring circuit with a current source
Published in Technical physics (01-04-2014)“…The measuring circuit with a voltage generator, which is traditionally used for studying electric properties of glasslike semiconductors, is compared with an…”
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Inversion of the impurity conductivity sign in As2Se3:Bi films deposited by two different methods
Published in Semiconductors (Woodbury, N.Y.) (01-10-2012)“…It is demonstrated that As 2 Se 3 :Bi x films deposited by thermal evaporation have p -type impurity conductivity, whereas films of the same composition,…”
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Controlling the U −-center density in Se-As chalcogenide-glass semiconductors by doping with metals and halogens
Published in Semiconductors (Woodbury, N.Y.) (01-07-1999)Get full text
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Model of high-T c superconductivity in low-coordination semiconductors and polymers
Published in Technical physics letters (01-04-1998)Get full text
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Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures
Published in Materials science & engineering. B, Solid-state materials for advanced technology (24-04-2001)“…We have studied electroluminescence (EL) in amorphous silicon-based erbium-doped structures at reverse bias in the temperature range 77–300 K. The intensity of…”
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Effect of coulomb correlations on luminescence and absorption in compensated semiconductors
Published in Semiconductors (Woodbury, N.Y.) (01-07-2016)“…The spectra of donor–acceptor light absorption and luminescence in lightly doped and lightly compensated semiconductors are calculated. In the…”
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