Search Results - "Tsendin, K. D."

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  1. 1

    Physics of switching and memory effects in chalcogenide glassy semiconductors by Bogoslovskiy, N. A., Tsendin, K. D.

    Published in Semiconductors (Woodbury, N.Y.) (01-05-2012)
    “…Switching and memory effects in chalcogenide glassy semiconductors have been known for nearly fifty years. However, the physics of these effects remains…”
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    Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe by Fefelov, S. A., Kazakova, L. P., Bogoslovskiy, N. A., Tsendin, K. D.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)
    “…The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after…”
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  3. 3

    Electronic–thermal switching and memory in chalcogenide glassy semiconductors by Bogoslovskij, N.A., Tsendin, K.D.

    Published in Journal of non-crystalline solids (01-02-2011)
    “…A constant value of the activation energy of direct current conductivity in chalcogenide glassy semiconductors is a strong evidence of the existence of…”
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  4. 4

    SUPERCONDUCTING PROPERTIES OF NEGATIVE-U CENTERS MATERIALS: CHALCOGENIDES, CUPRATE OXIDES AND FULLERIDES by Tsendin, K D

    “…If the concentration of negative-U centers is enough to create the pair band states, this can lead to superconductivity (negative-U centers model of…”
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    The changing of initial state in a strong electric field and memory effect in chalcogenides by Tsendin, K D

    “…Our preliminary investigations have shown that information recording based on glass-crystal phase transition, which is induced by pulse of electric field in…”
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    Application Of Chalcogenides For Creation Of New Superconductors by Tsendin, K D, Denisov, D V

    “…There was shown that some properties of both glassy semiconducting chalcogenides and HTSC cuprates can be explained in the frame of negative-U center model…”
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    Temperature dependence of the hole concentration in the model of a hole metal with negative-U centers by Barygin, I. A., Tséndin, K. D.

    Published in Physics of the solid state (2009)
    “…The temperature dependence of the hole concentration is studied within the model of a hole metal with negative- U centers. Different versions of the model with…”
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  8. 8

    Adiabatic potentials of chalcogenide vitreous semiconductors by Tsendin, K D

    Published in Glass physics and chemistry (01-07-2000)
    “…A method of calculating the adiabatic potentials for chalcogenide vitreous semiconductors has been proposed. The angle between the valence bonds of the…”
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  9. 9

    Nuclear microanalysis of amorphous As2Se3 films modified with Ln(thd)3 (Ln = Eu, Tb) by Kudoyarova, V. Kh, Kozyukhin, S. A., Tsendin, K. D., Lebedev, V. M., Babenko, E. A.

    Published in Inorganic materials (01-08-2006)
    “…The compositions of amorphous As2Se3 thin films modified with the Ln(thd)3 (Ln = Eu, Tb) complexes have been determined by nuclear microanalysis using…”
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    Similarity in the superconducting properties of chalcogenides, cuprate oxides and fullerides by Tsendin, K.D., Popov, B.P., Denisov, D.V.

    Published in Physica. C, Superconductivity (01-10-2004)
    “…The idea of Anderson pairs has been put forward for explanation of many extraordinary properties of chalcogenides glassy semiconductors. Recent decades made…”
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    Nonlinearity of current-voltage characteristics of chalcogenide glassy semiconductors, caused by multiphonon tunnel ionization of negative-U-centers by Bogoslowsky, N. A., Tsendin, K. D.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2009)
    “…The behavior of negative- U -centers in high electric fields was considered. It was shown that multiphonon tunnel ionization of negative- U -centers in…”
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    Current-voltage characteristics of thin Ge2Sb2Te5 films taken using a measuring circuit with a current source by Fefelov, S. A., Kazakova, L. P., Kozyukhin, S. A., Tsendin, K. D., Arsova, D., Pamukchieva, V.

    Published in Technical physics (01-04-2014)
    “…The measuring circuit with a voltage generator, which is traditionally used for studying electric properties of glasslike semiconductors, is compared with an…”
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  16. 16

    Inversion of the impurity conductivity sign in As2Se3:Bi films deposited by two different methods by Almasov, N. G., Prikhodko, O. Yu, Tsendin, K. D.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2012)
    “…It is demonstrated that As 2 Se 3 :Bi x films deposited by thermal evaporation have p -type impurity conductivity, whereas films of the same composition,…”
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    Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures by Yassievich, I.N., Bresler, M.S., Gusev, O.B., Pak, P.E., Tsendin, K.D., Terukov, E.I.

    “…We have studied electroluminescence (EL) in amorphous silicon-based erbium-doped structures at reverse bias in the temperature range 77–300 K. The intensity of…”
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    Effect of coulomb correlations on luminescence and absorption in compensated semiconductors by Bogoslovskiy, N. A., Petrov, P. V., Ivánov, Yu. L., Averkiev, N. S., Tsendin, K. D.

    Published in Semiconductors (Woodbury, N.Y.) (01-07-2016)
    “…The spectra of donor–acceptor light absorption and luminescence in lightly doped and lightly compensated semiconductors are calculated. In the…”
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