Search Results - "Tsatsul'nikov, A."

Thin-Film LED based on AlInGaN Layers Grown on Hybrid SiC/Si Substrates by Markov, L. K., Kukushkin, S. A., Pavluchenko, A. S., Smirnova, I. P., Sakharov, A. V., Nikolaev, A. E., Grashchenko, A. S., Osipov, A. V., Tsatsul’nikov, A. F.

“…we present the results of fabrication of flip-chip LEDs with removed substrate from AlInGaN heterostructures grown on SiC/Si substrates synthesized by…”
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Blue-green light-emitting diode with patterned electrode: Spectral analysis by Nishidate, Y., Khmyrova, I., Kholopova, Yu, Polushkin, E., Zemlyakov, V., Tsatsul'nikov, A., Shapoval, S.

“…Two step decomposition procedure was developed and implemented to analyze experimentally measured EL-spectra of light-emitting diode (LED) with mesh-like top…”
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Blue-green InGaN/GaN light-emitting diode with mesh-like top metal electrode by Kholopova, Yu, Khmyrova, I., Larkin, S., Zemlyakov, V., Egorkin, V., Tsatsul'nikov, A., Nishidate, Y., Shapoval, S.

“…Light-emitting diodes (LEDs) with blue-green dual-wavelength emission and top metal electrode patterned as a mesh were fabricated using InGaN/GaN material…”
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The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas by Lundin, V. V., Sakharov, A. V., Zavarin, E. E., Zakgeim, D. A., Nikolaev, A. E., Brunkov, P. N., Yagovkina, M. A., Tsatsul’nikov, A. F.

“…AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of…”
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Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN by Kukushkin, S. A., Osipov, A. V., Rozhavskaya, M. M., Myasoedov, A. V., Troshkov, S. I., Lundin, V. V., Sorokin, L. M., Tsatsul’nikov, A. F.

“…This paper presents the results of the electron microscopic study of GaN/AlGaN/AlN/SiC/Si(111) structures grown by the metal-organic vapor phase epitaxy. A SiC…”
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Quantum dot lasers: breakthrough in optoelectronics by Bimberg, D., Grundmann, M., Heinrichsdorff, F., Ledentsov, N.N., Ustinov, V.M., Zhukov, A.E., Kovsh, A.R., Maximov, M.V., Shernyakov, Y.M., Volovik, B.V., Tsatsul’nikov, A.F., Kop’ev, P.S., Alferov, Zh.I.

“…Semiconductor heterostructures with self-organized quantum dots (QDs) have experimentally exhibited properties expected for zero-dimensional systems. When used…”
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Resonance Bragg structure with double InGaN quantum wells by Bol’shakov, A. S., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, V. V., Tsatsul’nikov, A. F., Yagovkina, M. A.

“…The effect of exciton-polariton resonance on the optical properties of periodic heterostructures with double InGaN quantum wells in a GaN matrix has been…”
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(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell by Ivanov, A. A., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

“…We study the formation of a superradiant optical mode in the room temperature reflection spectra from resonant Bragg structures (RBSs) composed of single and…”
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Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study by Kondratyev, A.V., Talalaev, R.A., Lundin, W.V., Sakharov, A.V., Tsatsul’nikov, A.V., Zavarin, E.E., Fomin, A.V., Sizov, D.S.

“…AlGaN with the Al content in the range of 10–30% is one of the key materials for production of the optoelectronic devices operating in the UV spectral range…”
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Effect of growth kinetics on the structural and optical properties of quantum dot ensembles by Dubrovskii, V.G., Cirlin, G.E., Musikhin, Yu.G., Samsonenko, Yu.B., Tonkikh, A.A., Polyakov, N.K., Egorov, V.A., Tsatsul’nikov, A.F., Krizhanovskaya, N.A., Ustinov, V.M., Werner, P.

“…The growth kinetics influence on the structural and optical properties of quantum dot ensembles in the Ge/Si(1 0 0) and InAs/GaAs(1 0 0) heteroepitaxial…”
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Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure by Ivanov, A. A., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

“…We experimentally demonstrate the formation of a superradiant optical mode in the room-temperature reflection spectra from a resonant Bragg structure composed…”
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Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency by Kovsh, A. R., Wang, J. S., Wei, L., Shiao, R. S., Chi, J. Y., Volovik, B. V., Tsatsul’nikov, A. F., Ustinov, V. M.

“…(In)GaAsN bulk layers and quantum wells usually demonstrate lower photoluminescence intensity than the nitrogen-free compositions. In the present work we have…”
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Critical spatial disorder in InGaN resonant Bragg structures by Ivanov, A. A., Chaldyshev, V. V., Ushanov, V. I., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

“…We study a disorder-induced transformation of the resonant optical reflection from a nearly periodic system of quasi-2D excitons in the InGaN quantum wells…”
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Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation by Maximov, M.V., Asryan, L.V., Shernyakov, Yu.M., Tsatsul'nikov, A.F., Kaiander, I.N., Nikolaev, V.V., Kovsh, A.R., Mikhrin, S.S., Ustinov, V.M., Zhukov, A.E., Alferov, Z.I., Ledenstou, N.N., Bimberg, D.

“…Experimental and theoretical study was made of injection lasers based on InAs/GaAs quantum dots (QDs) formed by the activated alloy phase separation and…”
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Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates by Cherkashin, N. A., Sakharov, A. V., Nikolaev, A. E., Lundin, V. V., Usov, S. O., Ustinov, V. M., Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V., Tsatsul’nikov, A. F.

“…Light-emitting III–N heterostructures are grown by gas-phase epitaxy from organometallic compounds on SiC/Si (111) templates (substrates) formed using matched…”
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Effect of matrix on InAs self-organized quantum dots on InP substrate by Ustinov, V. M., Weber, E. R., Ruvimov, S., Liliental-Weber, Z., Zhukov, A. E., Egorov, A. Yu, Kovsh, A. R., Tsatsul’nikov, A. F., Kop’ev, P. S.

“…InAs self-organized quantum dots in In0.53Ga0.47As and In0.52Al0.48As matrices have been grown on InP substrates by molecular beam epitaxy. The dot size in…”
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Stress Analysis of GaN-Based Heterostructures on Silicon Substrates by Arteev, D. S., Sakharov, A. V., Zavarin, E. E., Nikolaev, A. E., Yagovkina, M. A., Tsatsulnikov, A. F.

“…Elastic stresses in AlN layers on silicon substrates of different thickness, as well as in multilayer (Al, Ga)N structures grown on AlN/Si templates, were…”
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Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells by Ivanov, A. A., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.

“…The optical properties of a structure with a periodic system of 100 InGaN quantum wells separated by nontunneling GaN barriers are investigated at room…”
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Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm by Maximov, M. V., Tsatsul’nikov, A. F., Volovik, B. V., Bedarev, D. A., Egorov, A. Yu, Zhukov, A. E., Kovsh, A. R., Bert, N. A., Ustinov, V. M., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D., Soshnikov, I. P., Werner, P.

“…We demonstrate the possibility of extending the spectral range of luminescence due to InAs quantum dots (QDs) in a GaAs matrix up to 1.7 μm. Realization of…”
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Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures by Musikhin, Yu. G., Gerthsen, D., Bedarev, D. A., Bert, N. A., Lundin, W. V., Tsatsul’nikov, A. F., Sakharov, A. V., Usikov, A. S., Alferov, Zh. I., Krestnikov, I. L., Ledentsov, N. N., Hoffmann, A., Bimberg, D.

“…The influence of different growth conditions on the In distribution in ultrathin InGaN insertions in a GaN matrix is investigated by high-resolution…”
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