Search Results - "Tsao, J Y"

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  1. 1

    LEDs for photons, physiology and food by Pattison, P. M., Tsao, J. Y., Brainard, G. C., Bugbee, B.

    Published in Nature (London) (01-11-2018)
    “…Lighting based on light-emitting diodes (LEDs) not only is more energy efficient than traditional lighting, but also enables improved performance and control…”
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  2. 2

    Four-color laser white illuminant demonstrating high color-rendering quality by Neumann, A, Wierer, Jr, J J, Davis, W, Ohno, Y, Brueck, S R J, Tsao, J Y

    Published in Optics express (04-07-2011)
    “…Solid-state lighting is currently based on light-emitting diodes (LEDs) and phosphors. Solid-state lighting based on lasers would offer significant advantages…”
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  3. 3

    Creative Outcome as Implausible Utility by Tsao, J. Y., Ting, C. L., Johnson, C. M.

    Published in Review of general psychology (01-09-2019)
    “…Two perspectives are used to reframe Simonton’s recent three-factor definition of creative outcome. The first perspective is functional: that creative ideas…”
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  4. 4

    Galileo's stream: A framework for understanding knowledge production by Tsao, J.Y., Boyack, K.W., Coltrin, M.E., Turnley, J.G., Gauster, W.B.

    Published in Research policy (01-03-2008)
    “…We introduce a framework for understanding knowledge production in which: knowledge is produced in stages (along a research to development continuum) and in…”
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  5. 5

    Design of adaptive fuzzy logic controller based on linguistic-hedge concepts and genetic algorithms by Liu, B D, Chen, C Y, Tsao, J Y

    “…In this paper, we propose a novel fuzzy logic controller, called linguistic hedge fuzzy logic controller, to simplify the membership function constructions and…”
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  6. 6

    Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model by Chow, W. W., Crawford, M. H., Tsao, J. Y., Kneissl, M.

    Published in Applied physics letters (20-09-2010)
    “…We propose a model to better investigate InGaN light-emitting diode (LED) internal efficiency by extending beyond the usual total carrier density rate equation…”
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  7. 7

    Solid-state lighting: lamps, chips, and materials for tomorrow by Tsao, J.Y.

    Published in IEEE circuits and devices magazine (01-05-2004)
    “…The aim of this article is twofold. First, we give a brief historical and forward-looking overview of conventional and SSL lighting technologies. We focus on…”
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    Excess stress and the stability of strained heterostructures by TSAO, J. Y, DODSON, B. W

    Published in Applied physics letters (05-09-1988)
    “…We derive stability criteria for arbitrary strained heterostructures. The criteria are based on evaluating the excess stress as a continuous function of…”
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  10. 10

    Stress releasing mechanisms of In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate by WERNER, P, ZAKHAROV, N. D, CHEN, Y, LILIENTAL-WEBER, Z, WASHBURN, J, KLEM, J. F, TSAO, J. Y

    Published in Applied physics letters (31-05-1993)
    “…The influence of substrate misorientation on the structure and morphology of In0.2Ga0.8As layers grown by molecular beam epitaxy on vicinal, near (001), GaAs…”
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  11. 11

    Tumor necrosis factor and IL-1 associated with plasma membranes of activated human monocytes lyse monokine-sensitive but not monokine- resistant tumor cells whereas viable activated monocytes lyse both by Ichinose, Y, Bakouche, O, Tsao, JY, Fidler, IJ

    Published in The Journal of immunology (1950) (15-07-1988)
    “…The purpose of our study was to determine some of the mechanisms involved in macrophage-mediated lysis of tumorigenic cells. A375 human melanoma cells (A375-R)…”
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  12. 12

    Layer-by-layer sputtering and epitaxy of Si(100) by BEDROSSIAN, P, HOUSTON, J. E, TSAO, J. Y, CHASON, E, PICRAUX, S. T

    Published in Physical review letters (01-07-1991)
    “…We report oscillations in diffracted electron intensities during ion bombardment of Si(100) by 200- and 250-eV Xe, both alone and with sequential and…”
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  13. 13

    Patterned photonucleation of chemical vapor deposition of Al by UV-laser photodeposition by Tsao, J. Y., Ehrlich, D. J.

    Published in Applied physics letters (15-09-1984)
    “…UV-laser photodeposition has been used to predispose surfaces to pyrolytic chemical vapor deposition (CVD) of Al from triisobutylaluminum. Two laser beam (UV…”
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    Lateral motion of terrace width distributions during step-flow growth by CHALMERS, S. A, TSAO, J. Y, GOSSARD, A. C

    Published in Applied physics letters (10-08-1992)
    “…We have observed two phenomena that occur during (Al,Ga)Sb lateral superlattice (LSL) growth which have implications on our understanding of adatom/step edge…”
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  16. 16

    Stability of strained quantum-well field-effect transistor structures by Peercy, P.S., Dodson, B.W., Tsao, J.Y., Jones, E.D., Myers, D.R., Zipperian, T.E., Dawson, L.R., Biefeld, R.M., Klem, J.F., Hills, C.R.

    Published in IEEE electron device letters (01-12-1988)
    “…Conditions for stability of strained-layer structures and their implications for device fabrication are examined. Structures which have exhibited the best…”
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  17. 17

    Ion beam enhanced epitaxial growth of Ge (001) by CHASON, E, BEDROSSIAN, P, HORN, K. M, TSAO, J. Y, PICRAUX, S. T

    Published in Applied physics letters (22-10-1990)
    “…An enhancement in surface smoothness during molecular beam epitaxial growth of Ge on Ge (001) by 200 eV Xe ion bombardment has been measured with reflection…”
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  18. 18

    Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates by CHEN, Y, ZAKHAROV, N. D, WERNER, P, LILIENTAL-WEBER, Z, WASHBURN, J, KLEM, J. F, TSAO, J. Y

    Published in Applied physics letters (29-03-1993)
    “…The atomic structure of misfit dislocations at In0.2Ga0.8As/GaAs interfaces misoriented 2°–10° from (001) has been investigated by high-resolution electron…”
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  19. 19

    Photodeposition of Ti and application to direct writing of Ti:LiNbO3 waveguides by Tsao, J. Y., Becker, R. A., Ehrlich, D. J., Leonberger, F. J.

    Published in Applied physics letters (01-04-1983)
    “…An ultraviolet laser photodeposition process based on the photolysis of TiCl4 has been developed. The photochemistry of this new metal-halide system has been…”
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  20. 20

    Direct measurements of liquid/solid interface kinetics during pulsed-laser-induced melting of aluminum by TSAO, J. Y, PICRAUX, S. T, PEERCY, P. S, THOMPSON, M. O

    Published in Applied physics letters (27-01-1986)
    “…We report time-resolved electrical-resistance measurements obtained during pulsed-laser melting of a metal. Through heat-flow calculations and solute-diffusion…”
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