Search Results - "Trumbull, Kathleen A."

Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation by Robinson, Joshua A, Hollander, Matthew, LaBella, Michael, Trumbull, Kathleen A, Cavalero, Randall, Snyder, David W

“…We directly demonstrate the importance of buffer elimination at the graphene/SiC(0001) interface for high frequency applications. Upon successful buffer…”
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Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties by Robinson, Joshua A, LaBella, Michael, Trumbull, Kathleen A, Weng, Xiaojun, Cavelero, Randall, Daniels, Tad, Hughes, Zachary, Hollander, Mathew, Fanton, Mark, Snyder, David

“…We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on…”
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Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices by Bresnehan, Michael S, Hollander, Matthew J, Wetherington, Maxwell, LaBella, Michael, Trumbull, Kathleen A, Cavalero, Randal, Snyder, David W, Robinson, Joshua A

“…Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based electronic devices. Here we investigate the potential of h-BN gate…”
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Enhanced Transport and Transistor Performance with Oxide Seeded High-κ Gate Dielectrics on Wafer-Scale Epitaxial Graphene by Hollander, Matthew J, LaBella, Michael, Hughes, Zachary R, Zhu, Michael, Trumbull, Kathleen A, Cavalero, Randal, Snyder, David W, Wang, Xiaojun, Hwang, Euichul, Datta, Suman, Robinson, Joshua A

“…We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for…”
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Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties by Hollander, Matthew J., Agrawal, Ashish, Bresnehan, Michael S., LaBella, Michael, Trumbull, Kathleen A., Cavalero, Randal, Snyder, David W., Datta, Suman, Robinson, Joshua A.

“…We present a comprehensive study on the integration of hexagonal boron nitride (h‐BN) with epitaxial graphene (EG) and bilayer hydrogen intercalated EG…”
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Heterogeneous integration of hexagonal boron nitride on bilayer quasi-free-standing epitaxial graphene and its impact on electrical transport properties (Phys. Status Solidi A 6/2013) by Hollander, Matthew J., Agrawal, Ashish, Bresnehan, Michael S., LaBella, Michael, Trumbull, Kathleen A., Cavalero, Randal, Snyder, David W., Datta, Suman, Robinson, Joshua A.

“…In recent years, hexagonal boron nitride (h‐BN) has gained interest as a material for use in graphene electronics due to its unique properties and the…”
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Atomic layer deposition of PbTiO3 and PbZrxTi1-xO3 films using metal alkyl and alkylamide precursors by Sbrockey, Nick M., Tompa, Gary S., Lavelle, Robert, Trumbull, Kathleen A., Fanton, Mark A., Snyder, David W., Polcawich, Ronald G., Potrepka, Daniel M.

“…Atomic layer deposition (ALD) processes were demonstrated for lead-titanate (PbTiO3) and lead-zirconium-titanate (PZT) films. The metal organic precursors were…”
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Effects of substrate orientation on the structural and electronic properties of epitaxial graphene on SiC(0001) by Robinson, Joshua A., Trumbull, Kathleen A., LaBella, Michael, Cavalero, Randall, Hollander, Matthew J., Zhu, Michael, Wetherington, Maxwell T., Fanton, Mark, Snyder, David W.

“…We investigate graphene transport and structural properties as a function of silicon carbide (SiC) wafer orientation. Terrace step edge density is found to…”
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High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics by Hollander, M. J., Agrawal, A., Bresnehan, M. S., LaBella, M., Trumbull, K. A., Cavalero, R., Datta, S., Robinson, J. A.

“…In recent years, hexagonal boron nitride (h-BN) has gained interest as a material for use in graphene based electronics, where its ultra-smooth two-dimensional…”
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Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC by Tedesco, Joseph L, Jernigan, Glenn G, Culbertson, James C, Hite, Jennifer K, Yang, Yang, Daniels, Kevin M, Myers-Ward, Rachael L, Eddy,Jr, Charles R, Robinson, Joshua A, Trumbull, Kathleen A, Wetherington, Maxwell T, Campbell, Paul M, Gaskill, D. Kurt

“…Appl. Phys. Lett. 96, 222103 (2010) Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in…”
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