Search Results - "Troshkov, S.I"

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy by Mizerov, A.M., Jmerik, V.N., Yagovkina, M.A., Troshkov, S.I., Kop'ev, P.S., Ivanov, S.V.

“…Comparative study of growth kinetics of the AlxGa1−xN (x=0–1) layers grown by plasma-assisted molecular beam epitaxy (PA MBE) under different growth conditions…”
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Pulsed growth techniques in plasma-assisted molecular beam epitaxy of Al Ga1−N layers with medium Al content (x=0.4–0.6) by Nechaev, D.V., Brunkov, P.N., Troshkov, S.I., Jmerik, V.N., Ivanov, S.V.

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Demultiplexed single-photon source with a quantum dot coupled to microresonator by Rakhlin, M.V., Galimov, A.I., Dyakonov, I.V., Skryabin, N.N., Klimko, G.V., Kulagina, M.M., Zadiranov, Yu.M., Sorokin, S.V., Sedova, I.V., Guseva, Yu.A., Berezina, D.S., Serov, Yu.M., Maleev, N.A., Kuzmenkov, A.G., Troshkov, S.I., Taratorin, K.V., Skalkin, A.K., Straupe, S.S., Kulik, S.P., Shubina, T.V., Toropov, A.A.

“…The characteristics of a single-photon emitter based on a semiconductor quantum dot, such as their indistinguishability and brightness, depend on the stability…”
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Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1−xN layers with medium Al content (x=0.4–0.6) by Nechaev, D.V., Brunkov, P.N., Troshkov, S.I., Jmerik, V.N., Ivanov, S.V.

“…Paper presents the comparative analysis of Metal Modulated Epitaxy (MME) and Droplet Elimination by Thermal Annealing (DETA) techniques in the low-temperature…”
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Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates by Jmerik, V.N., Kuznetsova, N.V., Nechaev, D.V., Shubina, T.V., Kirilenko, D.A., Troshkov, S.I., Davydov, V.Yu, Smirnov, A.N., Ivanov, S.V.

“…•Site-controlled 100nm-thick GaN(000I¯) NRs are grown by PA MBE on apexes of µ-CPSS.•NRs selectively grow due to anisotropy of GaN surface energy and adatom…”
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Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring by Jmerik, V.N., Mizerov, A.M., Nechaev, D.V., Aseev, P.A., Sitnikova, A.A., Troshkov, S.I., Kop'ev, P.S., Ivanov, S.V.

“…Low-temperature (<750°C) growth of thick AlN epilayers on c-sapphire by plasma-assisted molecular-beam epitaxy under the Al-rich conditions (FAl/FN⁎<1.4) is…”
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Control of emission spectra in quantum dot microdisk/microring lasers by Kryzhanovskaya, N V, Mukhin, I S, Moiseev, E I, Shostak, I I, Bogdanov, A A, Nadtochiy, A M, Maximov, M V, Zhukov, A E, Kulagina, M M, Vashanova, K A, Zadiranov, Yu M, Troshkov, S I, Lipovskii, A A, Mintairov, A

“…Focused ion beam is applied to quantum dot based microresonators to form pits or groove on their surface. The emission spectra of the resonators based lasers…”
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Fast AlGaN growth in a whole composition range in planetary reactor by Lundin, W.V., Nikolaev, A.E., Rozhavskaya, M.M., Zavarin, E.E., Sakharov, A.V., Troshkov, S.I., Yagovkina, M.A., Tsatsulnikov, A.F.

“…Growth of AlGaN in AIX2000 HT planetary reactor was investigated under the wide range of NH3, TMAl and TMGa flows. At low NH3 flows gallium incorporation in…”
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Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN by Kukushkin, S. A., Osipov, A. V., Rozhavskaya, M. M., Myasoedov, A. V., Troshkov, S. I., Lundin, V. V., Sorokin, L. M., Tsatsul’nikov, A. F.

“…This paper presents the results of the electron microscopic study of GaN/AlGaN/AlN/SiC/Si(111) structures grown by the metal-organic vapor phase epitaxy. A SiC…”
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Microdisk injection lasers for the 1.27-µm spectral range by Kryzhanovskaya, N.V, Maximov, M.V, Blokhin, S.A, Bobrov, M.A, Kulagina, M.M, Troshkov, S.I, Zadiranov, Yu. M, Lipovskii, A.A, Moiseev, E.I, Kudashova, Yu.V, Livshits, D.A, Ustinov, V.M, Zhukov, A.E

“…Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 µm and an active region based on InAs/InGaAs quantum dots, are fabricated. The…”
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Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands by Evropeytsev, E. A., Semenov, A. N., Nechaev, D. V., Jmerik, V. N., Kaibyshev, V. Kh, Troshkov, S. I., Brunkov, P. N., Usikova, A. A., Ivanov, S. V., Toropov, A. A.

“…We report on fabrication and studies of composite heterostuctures consisting of an Al 0.55 Ga 0.45 N/A l0.8 Ga 0.2 N quantum well and surface Al nanoislands,…”
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InGaN/GaN light-emitting diode microwires of submillimeter length by Lundin, W. V., Rodin, S. N., Sakharov, A. V., Lundina, E. Yu, Usov, S. O., Zadiranov, Yu. M., Troshkov, S. I., Tsatsulnikov, A. F.

“…Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase…”
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Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture by Bobrov, M. A., Maleev, N. A., Blokhin, S. A., Kuzmenkov, A. G., Vasil’ev, A. P., Blokhin, A. A., Guseva, Yu. A., Kulagina, M. M., Zadiranov, Yu. M., Troshkov, S. I., Lysak, V., Ustinov, V. M.

“…The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture…”
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Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range by Babichev, A. V., Kryzhanovskaya, N. V., Moiseev, E. I., Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I., Blokhin, S. A., Bobrov, M. A., Zadiranov, Yu. M., Troshkov, S. I., Egorov, A. Yu

“…The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is…”
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Determination of the thickness and spectral dependence of the refractive index of [Al.sub.x][In.sub.1-x]Sb epitaxial layers from reflectance spectra by Komkov, O.S, Firsov, D.D, Semenov, A.N, Meltser, B. Ya, Troshkov, S.I, Pikhtin, A.N, Ivanov, S.V

“…A nondestructive method for measuring the thicknesses of epitaxial layers of [Al.sub.x][In.sub.1-x]Sb alloys based on interference effects in reflectance…”
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Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency by Zubov, F. I., Kryzhanovskaya, N. V., Moiseev, E. I., Polubavkina, Yu. S., Simchuk, O. I., Kulagina, M. M., Zadiranov, Yu. M., Troshkov, S. I., Lipovskii, A. A., Maximov, M. V., Zhukov, A. E.

“…The spectral, threshold, and power characteristics of a microdisk laser 31 μm in diameter with an active region based on InAs/InGaAs quantum dots, operating in…”
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Thermal resistance of ultra-small-diameter disk microlasers by Zhukov, A. E., Kryzhanovskaya, N. V., Maximov, M. V., Lipovskii, A. A., Savelyev, A. V., Shostak, I. I., Moiseev, E. I., Kudashova, Yu. V., Kulagina, M. M., Troshkov, S. I.

“…The thermal resistance of AlGaAs/GaAs microlasers of the suspended-disk type with a diameter of 1.7–4 μm and InAs/InGaAs quantum dots in the active region is…”
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Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures by Lebedev, D. V., Mintairov, A. M., Vlasov, A. S., Davydov, V. Yu, Kulagina, M. M., Troshkov, S. I., Bogdanov, A. A., Smirnov, A. N., Gocalinska, A., Juska, G., Pelucchi, E., Kapaldo, J., Rouvimov, S., Merz, J. L.

“…The emissivity of unstrained quantum-dimensional InP/AlInAs nanostructures and their lasing properties in microdisk cavities prepared by wet etching have been…”
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Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR by Maleev, N. A., Kuz’menkov, A. G., Kulagina, M. M., Zadiranov, Yu. M., Vasil’ev, A. P., Blokhin, S. A., Shulenkov, A. S., Troshkov, S. I., Gladyshev, A. G., Nadtochiy, A. M., Pavlov, M. M., Bobrov, M. A., Nazaruk, D. E., Ustinov, V. M.

“…Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector…”
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High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots by Kryzhanovskaya, N. V., Zhukov, A. E., Nadtochy, A. M., Slovinsky, I. A., Maximov, M. V., Kulagina, M. M., Savelev, A. V., Arakcheeva, E. M., Zadiranov, Yu. M., Troshkov, S. I., Lipovskii, A. A.

“…Lasing at a wavelength of >1.3 μm has been achieved at temperatures of up to 380 K in a ring microlaser (diameter of 6 μm) with an active region based on…”
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