Search Results - "Trombley, Django"
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A Physical Understanding of RF Noise in Bulk nMOSFETs With Channel Lengths in the Nanometer Regime
Published in IEEE transactions on electron devices (01-01-2012)“…Experimental and simulation results of high-frequency channel noise in MOSFETs with 40-, 80-, and 110- nm gate lengths are presented. The measured dc I - V…”
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Journal Article -
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System Co-design of a 600V GaN FET Power Stage with Integrated Driver in a QFN System-in-Package (QFN-SiP)
Published in 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) (01-05-2019)“…The adoption of GaN technology, in power electronic applications, is greatly facilitated by its inherent performance benefits as compared to its MOSFET…”
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Conference Proceeding -
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A novel and accurate methodology for design and characterization of wire-bond package performance for 5-10GHz applications
Published in 2013 IEEE 63rd Electronic Components and Technology Conference (01-05-2013)“…This paper presents novel and accurate design, simulation and measurement methodologies to characterize high-speed (5-10GHz) signal-path applications on…”
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Conference Proceeding
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4
Integrated High-frequency Reference Clock Systems Utilizing Mirror-encapsulated BAW Resonators
Published in 2019 IEEE International Ultrasonics Symposium (IUS) (01-10-2019)“…This work introduces an integrated reference clock system using a 2.5 GHz mirror-encapsulated BAW (bulk acoustic wave) resonator as the frequency source. With…”
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Conference Proceeding -
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A 25 mV-startup cold start system with on-chip magnetics for thermal energy harvesting
Published in ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference (01-09-2017)“…Thermal energy harvesting systems use boost converters for high-efficiency low voltage operation, but lack the ability for low voltage startup without off-chip…”
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Conference Proceeding -
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The analysis of transit-time effect of bipolar base collector junction breakdown
Published in 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems (01-01-2014)“…This paper analyzes the transit-time effect of a bipolar biased at base-collector junction breakdown condition. Both simulation and experiment show that…”
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Conference Proceeding -
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High-frequency noise measurements on MOSFETs with channel-lengths in sub-100 nm regime
Published in 2009 2nd International Workshop on Electron Devices and Semiconductor Technology (01-06-2009)“…High-Frequency signal and noise measurements on 40 nm, 80 nm, and 110 nm, gate-length MOS transistors are performed. On-wafer measurements of S-parameters up…”
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Conference Proceeding -
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Numerical investigation of excess RF channel noise in sub-100 nm MOSFETs
Published in 2009 2nd International Workshop on Electron Devices and Semiconductor Technology (01-06-2009)“…High-frequency simulations of channel-thermal noise in MOSFETs with gate-lengths of 40 nm, 80 nm, and 110 nm are presented. The simulated noise parameter gamma…”
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Conference Proceeding