Search Results - "Troian, Andrea"

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide by Timm, Rainer, Head, Ashley R., Yngman, Sofie, Knutsson, Johan V., Hjort, Martin, McKibbin, Sarah R., Troian, Andrea, Persson, Olof, Urpelainen, Samuli, Knudsen, Jan, Schnadt, Joachim, Mikkelsen, Anders

“…Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to…”
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InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition by Troian, Andrea, Knutsson, Johan V., McKibbin, Sarah R., Yngman, Sofie, Babadi, Aein S., Wernersson, Lars-Erik, Mikkelsen, Anders, Timm, Rainer

“…Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based…”
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Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces by Liu, Yen-Po, Yngman, Sofie, Troian, Andrea, D'Acunto, Giulio, Jönsson, Adam, Svensson, Johannes, Mikkelsen, Anders, Wernersson, Lars-Erik, Timm, Rainer

“…[Display omitted] •Hydrogen plasma treatment in ultra-high vacuum removes native oxide from GaSb.•GaSb nanowire surfaces are easier to clean than the planar…”
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On the reliability of powder diffraction Line Profile Analysis of plastically deformed nanocrystalline systems by Rebuffi, Luca, Troian, Andrea, Ciancio, Regina, Carlino, Elvio, Amimi, Amine, Leonardi, Alberto, Scardi, Paolo

“…An iron-molybdenum alloy powder was extensively deformed by high energy milling, so to refine the bcc iron domain size to nanometer scale (~10 nm) and…”
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Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2 by Athle, Robin, Persson, Anton E.O., Troian, Andrea, Borg, Mattias

“…Ferroelectric tunnel junctions (FTJs) based on ultrathin HfO2 have great potential as a fast and energy-efficient memory technology compatible with…”
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Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1–x Zr x O2 by Athle, Robin, Persson, Anton E.O, Troian, Andrea, Borg, Mattias

“…Ferroelectric tunnel junctions (FTJs) based on ultrathin HfO2 have great potential as a fast and energy-efficient memory technology compatible with…”
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Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf 1– x Zr x O 2 by Athle, Robin, Persson, Anton E.O, Troian, Andrea, Borg, Mattias

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Nanobeam X‑ray Fluorescence Dopant Mapping Reveals Dynamics of in Situ Zn-Doping in Nanowires by Troian, Andrea, Otnes, Gaute, Zeng, Xulu, Chayanun, Lert, Dagytė, Vilgailė, Hammarberg, Susanna, Salomon, Damien, Timm, Rainer, Mikkelsen, Anders, Borgström, Magnus T, Wallentin, Jesper

“…The properties of semiconductors can be controlled using doping, making it essential for electronic and optoelectronic devices. However, with shrinking device…”
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Operando Surface Characterization of InP Nanowire p–n Junctions by McKibbin, Sarah R, Colvin, Jovana, Troian, Andrea, Knutsson, Johan V, Webb, James L, Otnes, Gaute, Dirscherl, Kai, Sezen, Hikmet, Amati, Matteo, Gregoratti, Luca, Borgström, Magnus T, Mikkelsen, Anders, Timm, Rainer

“…We present an in-depth analysis of the surface band alignment and local potential distribution of InP nanowires containing a p–n junction using scanning probe…”
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Nanoscale mapping of carrier collection in single nanowire solar cells using X‐ray beam induced current by Chayanun, Lert, Otnes, Gaute, Troian, Andrea, Hammarberg, Susanna, Salomon, Damien, Borgström, Magnus T., Wallentin, Jesper

“…Here it is demonstrated how nanofocused X‐ray beam induced current (XBIC) can be used to quantitatively map the spatially dependent carrier collection…”
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Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies by D’Acunto, Giulio, Troian, Andrea, Kokkonen, Esko, Rehman, Foqia, Liu, Yen-Po, Yngman, Sofie, Yong, Zhihua, McKibbin, Sarah R, Gallo, Tamires, Lind, Erik, Schnadt, Joachim, Timm, Rainer

“…III–V semiconductors, such as InAs, with an ultrathin high-κ oxide layer have attracted a lot of interests in recent years as potential next-generation…”
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Atomic Hydrogen Annealing of Graphene on InAs Surfaces and Nanowires: Interface and Morphology Control for Optoelectronics and Quantum Technologies by Mousavi, S. Fatemeh, Liu, Yen-Po, D’Acunto, Giulio, Troian, Andrea, Caridad, José M., Niu, Yuran, Zhu, Lin, Jash, Asmita, Flodgren, Vidar, Lehmann, Sebastian, Dick, Kimberly A., Zakharov, Alexei, Timm, Rainer, Mikkelsen, Anders

“…Folding two-dimensional graphene around one-dimensional III–V nanowires yields a new class of hybrid nanomaterials combining their excellent complementary…”
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