Evidence of the disorder-independent electron-phonon scattering time in thin NbN films
We report on experimental study of the effect of disorder on electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used in single-photon detectors. An increase in disorder in the studied 2.5 nm thick NbN films characterized by Ioffe-Rege...
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Main Authors: | , , , , , , , , , |
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Format: | Journal Article |
Language: | English |
Published: |
09-12-2022
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Subjects: | |
Online Access: | Get full text |
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Summary: | We report on experimental study of the effect of disorder on electronic
parameters and inelastic scattering mechanisms in ultrathin superconducting NbN
films, which are commonly used in single-photon detectors. An increase in
disorder in the studied 2.5 nm thick NbN films characterized by Ioffe-Regel
parameter from 6.3 to 1.6 is accompanied by a decrease in the critical
temperature $T_c$ from 11.5 K to 3.4 K. By measuring magnetoconductance in the
range from $T_c$ to $\sim3T_c$, we extract the inelastic scattering rates of
electrons, including electron-phonon (e-ph) scattering rates
$\tau_{e-ph}^{-1}$. We observe that $\tau_{e-ph}^{-1}$ and their temperature
dependencies are insensitive to disorder that is not described by the existing
models of the e-ph scattering in disordered metals and can be due to the
presence of weakly disordered metal grains. As the temperature decreases the
temperature dependence $\tau_{e-ph}^{-1}$ changes from $T^3$ to $T^2$, which
can be result of a decrease in the dimension of the phonons involved in the
e-ph scattering. The obtained values of material parameters of ultrathin NbN
films can be useful for optimization of performance of NbN-based electronic
devices. |
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DOI: | 10.48550/arxiv.2207.05012 |